JPS5849021B2 - X-ray exposure method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray exposure method, and more particularly to an X-ray exposure method for manufacturing ICs and LSIs using X-ray phosphorography.

Recently, with the increase in the density of ICs and LSIs, the creation of high-density patterns is being developed.

It is already known that the X-ray exposure method, along with the electron beam exposure method, is attracting attention as a high-resolution transfer technology in the production of high-density patterns.

By the way, in this X-ray beam exposure method, the target is irradiated with an electron beam to generate X-rays, but there is a large amount of heat loss in generating the X-rays, and most of the irradiated electron beam becomes heat loss. .

Conventionally, therefore, X-rays have been generated by using a rotating target and irradiating one point of the target with an electron beam.

This is because as the target rotates, the point irradiated by the electron beam changes, so a cooling effect can be obtained and the input power can also be increased.

However, even in such conventional X-ray exposure methods, the electron beam impacts only one point on the target, so a sufficient cooling effect cannot be obtained and high output cannot be achieved. The blurring effect of the line beam is thick《
There was a drawback.

The purpose of the present invention is to increase the cooling effect by scanning a stationary target with an electron beam, and at the same time increase the production volume by extracting and exposing the same number of X-rays as the number of substrates to be exposed. An object of the present invention is to provide an X-ray exposure method that can suppress the effect of blurring to a small level.

According to the present invention, in an X-ray exposure method in which a resist layer is formed on a substrate and a pattern is formed by selectively irradiating and exposing the resist layer with X-rays, an electron beam is scanned over a stationary target to form a pattern. An X-ray exposure method is proposed in which the resist layer on the substrate is exposed by extracting X-rays generated by scanning an electron beam through the same number of pinholes as the substrate to be exposed.

Embodiments of the X-ray exposure method according to the present invention will be described in detail below with reference to the drawings.

The figure shows an embodiment of the X-ray exposure method according to the present invention, and clarifies the relative relationship between a stationary target 1, a pinhole plate 2, and a wafer 3.

As shown, the target 1 is scanned by an electron beam (not shown).

In the case shown in the figure, the electron beam scans the target along a trajectory 1a, and X-rays are emitted toward the pinhole plate 2 as a result of the scanning.

The material of the stationary target 1 may be the same as that used for conventional rotating targets, and the X-rays emitted by the stationary target 1 can be passed through the pinhole 2a provided in the pinhole plate 2.
The wafer 3 is reached through the wafer 3.

In this case, it goes without saying that the pinhole 2a must be provided in the corresponding wafer 3 at a position through which the X-rays from the stationary target 1 can pass.

It goes without saying that these pinholes 2a should be arranged so that X-rays from impact electrons do not hit the same wafer 3 at the same time through two or more pinholes.

Moreover, this pinhole 2a is formed so that when the X-ray radiation source of the stationary target 1 is viewed from the wafer 3, the radiation source is regarded as a point, which is very important in the X-ray exposure method. That's true.

This is because, as is already known, in an X-ray exposure apparatus, a resist (not shown) on the wafer 3 and a mask (not shown) placed thereon are exposed with a certain distance between them.

Therefore, if the X-ray generation source is not a point light source, the X-rays irradiating the resist will be scattered and blurred.

As explained in detail above, the present invention can provide the same cooling effect as a rotating target by scanning an electron beam on a stationary target, does not require rotational operation of the target, and exposes the generated X-rays. By taking out the wafers through the same number of pinholes as the number of wafers, it is possible to simultaneously expose the wafers without any blurring effect, and to increase the production amount, so the effects of the present invention are very large.

[Brief explanation of drawings]

The figure is an explanatory diagram of the X-ray exposure method according to the present invention. In the figure, 1 is a stationary target, 2a is a pinhole, and 3
is the wafer.

Claims (1)

[Claims] 1 In an X-ray exposure method in which a resist layer is formed on a substrate and a pattern is formed by selectively irradiating and exposing the resist layer to X-rays, a stationary target is scanned with an electron beam and the electron beam is scanned. An X-ray exposure method characterized in that the resist layer on the substrate is exposed by extracting the X-rays generated by the resist layer through the same number of pinholes as the substrate to be exposed.