JPS5846641A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5846641A
JPS5846641A JP14532481A JP14532481A JPS5846641A JP S5846641 A JPS5846641 A JP S5846641A JP 14532481 A JP14532481 A JP 14532481A JP 14532481 A JP14532481 A JP 14532481A JP S5846641 A JPS5846641 A JP S5846641A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring pattern
electrode wiring
ti
layer
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14532481A
Inventor
Minoru Inoue
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To obtain an accurate sharp electrode wiring pattern through dry etching by an etchant, the principal ingredient thereof is the fluorchlor substitution product of hydrocarbon such as carbon tetrachloride (CF4). CONSTITUTION:The electrode wiring pattern 3, the principal ingredient thereof is Al, is formed through a silicon dioxide (SiO2) film 2 shaped onto an Si substrate 1. A Ti layer 4 in approximately 100nm thickness is shaped onto the whole surface exposed of the substrate through an evaporation method or a sputtering method or the like. The whole is thermally treated for several dozen min in a reducing atmosphere at the temperature of 400 deg.C or 450 deg.C or an inert gas or vacuum, and the thin-layer 5 of an Al-Ti alloy or an intermetallic compound is formed to an interface between the electrode wiring pattern 3 and the Ti alloy or an intermetallic compound is formed to an interface between the electrode wiring pattern 3 and the Ti layer 4. The Ti layer 4 not reacted is removed while using CF4 as the etchant through a barrel type plasma etching method, and the electrode wiring pattern 3, the surface thereof is coated with the Al-Ti thin layer 5, is obtained.
JP14532481A 1981-09-14 1981-09-14 Manufacture of semiconductor device Pending JPS5846641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14532481A JPS5846641A (en) 1981-09-14 1981-09-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14532481A JPS5846641A (en) 1981-09-14 1981-09-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5846641A true true JPS5846641A (en) 1983-03-18

Family

ID=15382521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14532481A Pending JPS5846641A (en) 1981-09-14 1981-09-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5846641A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5747361A (en) * 1991-05-01 1998-05-05 Mitel Corporation Stabilization of the interface between aluminum and titanium nitride
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432143A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Etching process
JPS54127280A (en) * 1978-03-27 1979-10-03 Sumitomo Electric Ind Ltd Semiconductor device
JPS55138258A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432143A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Etching process
JPS54127280A (en) * 1978-03-27 1979-10-03 Sumitomo Electric Ind Ltd Semiconductor device
JPS55138258A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976969A (en) * 1989-11-30 1999-11-02 Stmicroelectronics, Inc. Method for forming an aluminum contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US5747361A (en) * 1991-05-01 1998-05-05 Mitel Corporation Stabilization of the interface between aluminum and titanium nitride
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US6433435B2 (en) 1993-11-30 2002-08-13 Stmicroelectronics, Inc. Aluminum contact structure for integrated circuits

Similar Documents

Publication Publication Date Title
US5022979A (en) Electrode for use in the treatment of an object in a plasma
US4073669A (en) Plasma etching
US4380867A (en) Method for making electrically conductive penetrations into thin films
US4182646A (en) Process of etching with plasma etch gas
JPS5658247A (en) Production of semiconductor device
JPS58130529A (en) Semiconductor etching method
US5272107A (en) Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device
JPS5659694A (en) Manufacture of thin film
JPS5772321A (en) Manufacture of seiconductor device
US5227341A (en) Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step
JPH01187983A (en) Manufacture of photodiode
JPH0428231A (en) Manufacture of semiconductor device
JPS63111666A (en) Semiconductor device
JPS62136018A (en) Manufacture of semiconductor device
JPS61203652A (en) Manufacture of semiconductor device
GB1358438A (en) Process for the manufacture of a semiconductor component or an integrated semiconductor circuit
JPS5961146A (en) Manufacture of semiconductor device
JPS6233417A (en) Manufacture of semiconductor device
JPS58132932A (en) Plasma processing device
JPS5886717A (en) Forming of single crystal silicon film
JPS5867016A (en) Manufacture of thin film
JPS61218134A (en) Device and method for forming thin film
JPS61208241A (en) Manufacture of semiconductor device
JPS5233490A (en) Manufacturing process of semiconductor device
JPS5444474A (en) Contact forming method of semiconductor device