JPS5842285A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS5842285A
JPS5842285A JP14062081A JP14062081A JPS5842285A JP S5842285 A JPS5842285 A JP S5842285A JP 14062081 A JP14062081 A JP 14062081A JP 14062081 A JP14062081 A JP 14062081A JP S5842285 A JPS5842285 A JP S5842285A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
metal layer
gold
metal
ge
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14062081A
Inventor
Shoichi Kakimoto
Shigeyuki Nitsuta
Toshio Sogo
Saburo Takamiya
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

PURPOSE:To contrive improvement in reliability of adhesive property for the titled device by a method wherein a metal block, which will be turned to a heat radiating substance, and a laser element are adhered through the intermediary of an Si block whereon a metal layer having affinity for alloy solder material and a metal layer, having little surface rediation when it is alloyed, are coated on both sides. CONSTITUTION:The first metal layer 8 containing W, the second metal layer 9 consisting of gold, the third metal layer 10 of Ge, and the fourth metal layer 11 consisting of gold are formed in deposition on the front and back sides of an Si substrate 2. When Si submount 2 and a laser diode element 1 are successively placed on the metal block 3, which will be turned to a heat-resisting substrate with gold coating on the surface, and the above is maintained at the eutectic temperature of gold and Ge or above, said three metal layers are adhered each other by gold and Ge alloyed solder material 12, thereby enabling to obain the uniform adhesion having small thermal resistance.
JP14062081A 1981-09-07 1981-09-07 Manufacture of semiconductor laser device Pending JPS5842285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14062081A JPS5842285A (en) 1981-09-07 1981-09-07 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14062081A JPS5842285A (en) 1981-09-07 1981-09-07 Manufacture of semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5842285A true true JPS5842285A (en) 1983-03-11

Family

ID=15272938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14062081A Pending JPS5842285A (en) 1981-09-07 1981-09-07 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5842285A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5016083A (en) * 1990-01-12 1991-05-14 Mitsubishi Denki Kabushiki Kaisha Submount for semiconductor laser device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543659U (en) * 1977-06-10 1979-01-11
JPS5411690A (en) * 1977-06-27 1979-01-27 Nec Corp Semiconductor laser unit
JPS5419829U (en) * 1977-07-12 1979-02-08
JPS5575282A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Manufacturing method of semiconductor laser device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543659U (en) * 1977-06-10 1979-01-11
JPS5411690A (en) * 1977-06-27 1979-01-27 Nec Corp Semiconductor laser unit
JPS5419829U (en) * 1977-07-12 1979-02-08
JPS5575282A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Manufacturing method of semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5016083A (en) * 1990-01-12 1991-05-14 Mitsubishi Denki Kabushiki Kaisha Submount for semiconductor laser device
FR2657196A1 (en) * 1990-01-12 1991-07-19 Mitsubishi Electric Corp Frame intermediate laser device semiconductor.
JPH03209896A (en) * 1990-01-12 1991-09-12 Mitsubishi Electric Corp Semiconductor laser element submount

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