JPS5835925A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5835925A JPS5835925A JP13492581A JP13492581A JPS5835925A JP S5835925 A JPS5835925 A JP S5835925A JP 13492581 A JP13492581 A JP 13492581A JP 13492581 A JP13492581 A JP 13492581A JP S5835925 A JPS5835925 A JP S5835925A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating
- region
- semiconductor substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13492581A JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13492581A JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5835925A true JPS5835925A (ja) | 1983-03-02 |
JPS644664B2 JPS644664B2 (enrdf_load_stackoverflow) | 1989-01-26 |
Family
ID=15139742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13492581A Granted JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5835925A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03169667A (ja) * | 1989-11-30 | 1991-07-23 | Mita Ind Co Ltd | インクリボンの巻取制御装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107177A (enrdf_load_stackoverflow) * | 1973-02-13 | 1974-10-11 | ||
JPS55133556A (en) * | 1979-04-03 | 1980-10-17 | Matsushita Electronics Corp | Planar semiconductor device and method of fabricating the same |
-
1981
- 1981-08-28 JP JP13492581A patent/JPS5835925A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107177A (enrdf_load_stackoverflow) * | 1973-02-13 | 1974-10-11 | ||
JPS55133556A (en) * | 1979-04-03 | 1980-10-17 | Matsushita Electronics Corp | Planar semiconductor device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JPS644664B2 (enrdf_load_stackoverflow) | 1989-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1070016A (en) | Semiconductor floating gate storage device | |
US2791758A (en) | Semiconductive translating device | |
GB1572674A (en) | Semiconductor memory devices | |
JPS6010773A (ja) | 1素子型fet−記憶キヤパシタ回路の形成方法 | |
KR950024359A (ko) | 반도체장치 | |
JPS6436077A (en) | Semiconductor device | |
US3657614A (en) | Mis array utilizing field induced junctions | |
US4513304A (en) | Semiconductor memory device and process for producing the same | |
US4123300A (en) | Integrated circuit process utilizing lift-off techniques | |
JPS5835925A (ja) | 半導体装置 | |
CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
JPS60206040A (ja) | 半導体集積回路絶縁分離装置 | |
EP0134692A3 (en) | Multilayer semiconductor devices with embedded conductor structure | |
JPS5835979A (ja) | 半導体装置 | |
JPS6110271A (ja) | 半導体装置 | |
JPS60258952A (ja) | 半導体メモリ装置 | |
JPS59161861A (ja) | 半導体装置 | |
JPS58169975A (ja) | 半導体装置およびその製造方法 | |
JPH05175238A (ja) | 接合型電界効果トランジスタ | |
JPS56138946A (en) | Semiconductor device | |
JPS61231769A (ja) | 電界効果型トランジスタ | |
JPH0793367B2 (ja) | 半導体記憶装置およびその製造方法 | |
JPS63258056A (ja) | 半導体装置 | |
JPS6351666A (ja) | 半導体メモリセル | |
JPS5621359A (en) | Semiconductor device |