JPS5830231A - Analog switching circuit with selector - Google Patents

Analog switching circuit with selector

Info

Publication number
JPS5830231A
JPS5830231A JP12951981A JP12951981A JPS5830231A JP S5830231 A JPS5830231 A JP S5830231A JP 12951981 A JP12951981 A JP 12951981A JP 12951981 A JP12951981 A JP 12951981A JP S5830231 A JPS5830231 A JP S5830231A
Authority
JP
Japan
Prior art keywords
terminal
circuit
series
channel
analog signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12951981A
Other languages
Japanese (ja)
Inventor
Junichi Oguchi
小口 旬一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Epson Corp
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK, Epson Corp filed Critical Seiko Epson Corp
Priority to JP12951981A priority Critical patent/JPS5830231A/en
Publication of JPS5830231A publication Critical patent/JPS5830231A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Abstract

PURPOSE:To simplify a transistor array and wiring, and to improve integration density, by functionally using in common transistors constituting each independent functional circuit. CONSTITUTION:P channel FETs P1-P24 and N channel FETs N1-N24 constituting a transmission gate transistor for opening and closing an analog signal are combined in series and parallel by an optional number of pieces, and are connected. When to binary input data D1-D3, ''1'' is inputted, as for FFs F1-F3 for storing and outputting a selected data, Q1-Q3 become a high level. Accordingly, the N channel FET connected to the line of Q1-Q3 is turned on, and the P channel FET connected to the line of -Q1--Q3 is also turned on. In this case, a circuit whose transistors connected to 3 stages in series are all conducting becomes only a terminal (a), the terminal (a) is selected, and two-way transfer of an analog signal is executed between said terminal and an input/output common terminal X. After that, in accordance with a bindary input data, terminals (b)-(h) are selected.

Description

【発明の詳細な説明】 本発明はMO8型FETを用いた電子回μで。[Detailed description of the invention] The present invention uses an electronic circuit μ using an MO8 type FET.

n系列のアナログ信号を選択し任意の信号ををり出す、
4L<は任意の信号をn系列中の希望端子に伝達する為
のアナログスイッチ回路及ヒセレクタ−回路に関する。
Select n-series analog signals and extract any signal.
4L< relates to an analog switch circuit and a selector circuit for transmitting an arbitrary signal to a desired terminal in the n series.

従来、何県列かのアナログ信号入力から目的の信号のみ
J!!!択し出力伝達する場合、又は任意の一アナログ
信号を何県列かの出力端子に任意のタイミングで選択し
希望端子に出力伝達【ようとする場合、電子目跡の構成
として一例を示すとbA1図の様になるや ここでabcdefgh及びIは電気的アナログ信号の
伝達用入力端子、Ds  、Da  、Dsは2進化出
力選択信号、OLはグミツクパルスを示す。
Previously, J! ! ! An example of an electronic track configuration is bA1 when selecting and transmitting the output, or when selecting an arbitrary analog signal to the output terminals of several prefecture columns at an arbitrary timing and transmitting the output to the desired terminal. As shown in the figure, abcdefgh and I are input terminals for transmitting electrical analog signals, Ds, Da, and Ds are binary output selection signals, and OL is a gummy pulse.

父、回路の内訳はn系列弁のアナログ信号伝達及ヒ開閉
用トランヌミッションケートトランジスタ(T1〜71
m h n =8系列の場合で以降説明する。)で構成
するアナログスイッチ回路、前記トランスミッションゲ
ートトランジスタ駆動用インパーク論理回路(工i〜工
a  )−BAND論理ゲ)(Ns〜Ns)で構成する
デコーダ・セレクター回路5選択データ発生及び記憶用
フリップ70ツブ回路(Fs〜IFsや以下FFと略す
)である。
Father, the breakdown of the circuit is the analog signal transmission of the n-series valve and the transnumination gate transistor (T1 to 71) for opening and closing.
The case of m h n =8 series will be explained below. ), and a decoder/selector circuit 5 consisting of an impark logic circuit for driving the transmission gate transistor (I to A) - a BAND logic circuit (Ns to Ns), and a flip for selection data generation and storage. It is a 70-tube circuit (Fs to IFs or hereinafter abbreviated as FF).

これに対し本発明Fi、それぞれ独立した機能回路構成
トランジスタを機能的に兼用する事により。
On the other hand, in the present invention, the transistors each having an independent functional circuit structure are functionally shared.

構成トランジスタ数の低減及び回路配線の簡素化を図る
ものであり、咎に集積回路に用いた場合の集積密度の向
上によるチップサイズの縮少化すなわちコスト低減に対
し極めて有効的かつ合理的手段である。
It aims to reduce the number of constituent transistors and simplify circuit wiring, and is an extremely effective and rational means for reducing chip size and cost by increasing integration density when used in integrated circuits. be.

以下1本発明の騨細について構成を図面により説明する
Hereinafter, the detailed structure of the present invention will be explained with reference to the drawings.

第2図は本発明の一実施例である1図面け8系列の場合
について示す0図中B=bQ d 6 f g h及び
lは電気的アナログ信号入出力端子、Dl。
FIG. 2 shows an example of the present invention, in which eight series are included in one drawing. In FIG.

Da、Dsは2進化出力選択信号、OLはクロックパル
スh ’lx 、Fm 、’Fsは選択データ配憶及び
出力用yyを示j2.これらの信号名及び機能回路は第
1図(従来構成図)にそれぞれ対応し、同一のものを示
す。又bNm〜N 14けNチャンネルMOsgyET
f−PIP−Fs4[Pチャフ$ルMO日型FETをそ
れぞれ示す。
Da, Ds are binary output selection signals; OL is a clock pulse h'lx, Fm, 'Fs is a selection data storage and output yy; j2. These signal names and functional circuits correspond to those in FIG. 1 (conventional configuration diagram), and indicate the same thing. Also bNm~N 14 ke N channel MOsgyET
f-PIP-Fs4 [P chaf $ MO day type FET is shown respectively.

かお1図中1と2,5と4,5と617と8・9と10
.11と12.13と14.15と16゜17と18.
19と20.21と22.23と24.25と26&2
7と28.29と30131と32がそれぞれ接続され
ていても以降説明する回路動作については同等である。
Kao 1 figure 1 and 2, 5 and 4, 5 and 617 and 8, 9 and 10
.. 11 and 12.13 and 14.15 and 16°17 and 18.
19 and 20.21 and 22.23 and 24.25 and 26&2
Even if 7, 28, 29, 30, 131, and 32 are connected, the circuit operations described below are equivalent.

ここで2進化された選択信号Ds  、 Da  、 
Daがクロックパルス(OL)KよりFF(Ft  。
Here, the binarized selection signals Ds, Da,
Da is FF (Ft) from clock pulse (OL) K.

Fs、Fi)にそれぞれ読み込まれ、出力としてQx−
、Qt@Qm1″Q* 、Q−、Q、sが出力される。
Fs, Fi) respectively, and output Qx-
, Qt@Qm1''Q*, Q-, Q, s are output.

この時の選択希望端子をaとした場合、D、。If the desired terminal to be selected at this time is a, then D.

Da、DaはすべてHルベル(1)であわ、bとした場
合D1け10wレベル(0)Da、DsはそれぞれHル
ベル(1)が入力データとなる。
Da and Da are all H level (1), and when b is D1 digit 10W level (0), Da and Ds are each input data at H level (1).

以下c −hをそれぞれ選択希望端子とした場合の入力
データは第3図に示す通りである。
The input data when the terminals c to h below are respectively desired to be selected are as shown in FIG.

オす、alll子を選択した場合ti、FF出力けQI
−’Hiレベル(以降Iと衰わす)τ11111LOW
レベルll降0と表わす)−Qt−工、τ3001Qs
−1,τs−0となる。ここでそれぞれのデーターライ
ンをゲート入力に持つFET(Ns〜Ns*b Ps 
−PSI)けデータ信号レベルにより導通(ON )、
 !!断(OFF)状態となるが、前記データ出力時で
I/1−)is、N露 、Nm、Ni。
If all children are selected, ti, FF output and QI
-'Hi level (decreases to I from now on) τ11111LOW
Level ll is expressed as 0) -Qt-work, τ3001Qs
-1, τs-0. Here, FETs (Ns~Ns*b Ps
-PSI) becomes conductive (ON) depending on the data signal level.
! ! However, when the data is output, I/1-) is, N, Nm, Ni.

Ns、Ny、N・ 、 Ni1l、Nil、N+a嘗N
 1G 。
Ns, Ny, N・ , Ni1l, Nil, N+a嘗N
1G.

Its、Pt  、Pa 、PI 、PI 、Pa 、
Py 。
Its, Pt, Pa, PI, PI, Pa,
Py.

P・ 、91g、P’l、Ps輪Pmv、Pusのトラ
ンジスタがON、これ以外のトランジスタがOFF状態
となる。ここで3設置列に接続されたトランジスl 2
5f Nチャンネル、PチャンネルすべてON状態とな
っている導通ラインViNs  1 Ns 、NsのN
チャンネル部及びPs 、Pa 、PaのPチャンネル
部で41I!成されfc&端子のラインのみとカリ、こ
こでa端子が選択され入出力共通端子Xとの間にアナロ
グ信号の双方伝達が行なわれる。
The transistors P., 91g, P'l, Ps rings Pmv and Pus are turned on, and the other transistors are turned off. Here the transistors l 2 connected in 3 installation rows
5f N channel and P channel are all in ON state Conduction line ViNs 1 Ns, N of Ns
41I in the channel part and the P channel part of Ps, Pa, and Pa! The analog signal is transmitted between only the fc & terminal line and the input/output common terminal X where the a terminal is selected.

父、データをD+ −0−Da−■、D■−1とした場
合けNm  、Ns 、Na  、Ns  、Ni 、
No  。
Father, if the data are D+ -0-Da-■, D■-1, then Nm, Ns, Na, Ns, Ni,
No.

8重・、N1m、N14.N**、l’11t、N**
、P雪 tP諺 、 Pa  、 Pa  、 Pg 
 、 Pe  、 Ps・、PSI、PI4゜P 1@
 、 P my 、 F m−がそれぞれON状態とな
り、Ni。
8 layers, N1m, N14. N**, l'11t, N**
, P snow tP proverb, Pa, Pa, Pg
, Pe , Ps・, PSI, PI4゜P 1@
, P my , and F m- are each in the ON state, and Ni.

Ha  、Na 、X’a 、Ps 、Paで構成され
九アナログスイッチ部がON状態となりb端子と共通入
出力端子Iとの間でアナログ信号の伝達が行なわれる。
Nine analog switch sections consisting of Ha, Na, X'a, Ps, and Pa are turned on, and analog signals are transmitted between the b terminal and the common input/output terminal I.

以下c−h端子選択の場合についても1司様(データー
組み合わせは第5図、第4図の通り)である。
Hereinafter, the same applies to the case of selecting the ch terminal (the data combinations are as shown in FIGS. 5 and 4).

以上8系列選択の場合を例に説明したが、データーのビ
ット数及びIIII成トランジスタ配列を変更すること
により、任意の系列について選択スイッチングできる双
方向性のセレクタ付アナログク/ソチ回路を容易に構成
する事ができ、更にトランジスタ配列や配線の簡素化を
可能と:、5に、墳9Q等に用いた場合、集積密度の向
上に大きなす巣を本発明は本たちしめるものである。
The above explanation has been given using the case of 8 series selection as an example, but by changing the number of data bits and the III transistor arrangement, it is possible to easily configure an analog converter circuit with a bidirectional selector that can selectively switch any series. In addition, the present invention makes it possible to simplify the transistor arrangement and wiring. 5. When used in a tomb 9Q, etc., the present invention provides a great opportunity to improve the integration density.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の回路構成図、第2図は本発明の一寮施例
について第1図と1き換えた場合のvlI4成図を示す
1図中第1図、第2図共通記号は、同−信号及び同一機
能回路?ffわす。 第3図はデーター出力及び記憶用FFCF’1 。 Fi、Fm)Kついての入力データ一対選択端子(a〜
h)の関係を示す。第4図はFF(Fs。 F雪 、Fi)の入力データ一対FF出力(Ql 。 てx、Qm、τs、Qi、て畠 )の騨細な関係を表わ
す図表である。なお、第5図、第4図中IFiH1論理
レベル、0はLOW論理レベルを表わす。 以上 出願人 信州精器株式会社 株式会社 諏訪精工台 代理人 弁理士 最 上  務 第1図 第2図
Fig. 1 is a conventional circuit configuration diagram, and Fig. 2 is a vlI4 configuration diagram when Fig. 1 is replaced with Fig. 1 for the dormitory embodiment of the present invention. , the same signal and the same functional circuit? ffWasu. Figure 3 shows FFCF'1 for data output and storage. Fi, Fm) A pair of input data selection terminals for K (a~
h) shows the relationship. FIG. 4 is a chart showing the detailed relationship between the input data of the FF (Fs, Fi) and the FF output (Ql, x, Qm, τs, Qi, Tehatake). In addition, in FIG. 5 and FIG. 4, IFiH1 logic level, 0 represents LOW logic level. Applicant Shinshu Seiki Co., Ltd. Suwa Seikodai Agent Patent Attorney Tsutomu Mogami Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] MO日型電解効果トランジスタ(以下FETと略す)を
用い九電気的アナログ量伝達回路で、n系列のアナログ
信号を開閉するトランスミッションゲートトランジスタ
を有し、#^己トランスミッションゲートトランジスタ
の開閉を選択するセレグター回路を具備した回路で、紬
Fアナログ信号に4ml用トランヌミッションケートト
ランジヌタを#ll成するPチャンネル1?ICT及び
NチャンネルPETを任意個直列及び並列に組み合わせ
接続する事により、アナログ信号開閉用トランヌミッシ
ョンケートトランジスタi11成用FITが、前記セレ
クター回路構成用1PETを兼ねる事を%徴としたセレ
クタ付アナログスイッチ回路。
This is an electrical analog quantity transmission circuit using MO type field effect transistors (hereinafter abbreviated as FET), and has a transmission gate transistor that opens and closes n-series analog signals, and a selector that selects opening and closing of the transmission gate transistor. A circuit equipped with a circuit, P channel 1 that creates a 4ml transnussion gate transinutor for the Tsumugi F analog signal? By connecting any number of ICTs and N-channel PETs in series and in parallel, the FIT for forming the analog signal opening/closing transnuclear transistor i11 also serves as the 1PET for the selector circuit configuration. switch circuit.
JP12951981A 1981-08-18 1981-08-18 Analog switching circuit with selector Pending JPS5830231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12951981A JPS5830231A (en) 1981-08-18 1981-08-18 Analog switching circuit with selector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12951981A JPS5830231A (en) 1981-08-18 1981-08-18 Analog switching circuit with selector

Publications (1)

Publication Number Publication Date
JPS5830231A true JPS5830231A (en) 1983-02-22

Family

ID=15011503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12951981A Pending JPS5830231A (en) 1981-08-18 1981-08-18 Analog switching circuit with selector

Country Status (1)

Country Link
JP (1) JPS5830231A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6125327A (en) * 1984-07-16 1986-02-04 Nec Corp Clock selection circuit
JPS61281714A (en) * 1985-06-07 1986-12-12 Rohm Co Ltd Analog switch control circuit
EP0920135A2 (en) * 1997-11-27 1999-06-02 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US6774833B2 (en) 1999-08-16 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
JP2006332596A (en) * 2005-03-08 2006-12-07 Himax Optoelectronics Corp Decoder of digital-to-analog converter
JP2009296312A (en) * 2008-06-05 2009-12-17 Sony Corp Semiconductor device and solid-state imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101260A (en) * 1977-02-16 1978-09-04 Mitsubishi Electric Corp Selective gate circuit
JPS568340B2 (en) * 1973-08-29 1981-02-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568340B2 (en) * 1973-08-29 1981-02-23
JPS53101260A (en) * 1977-02-16 1978-09-04 Mitsubishi Electric Corp Selective gate circuit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6125327A (en) * 1984-07-16 1986-02-04 Nec Corp Clock selection circuit
JPS61281714A (en) * 1985-06-07 1986-12-12 Rohm Co Ltd Analog switch control circuit
JPH0567087B2 (en) * 1985-06-07 1993-09-24 Rohm Kk
EP1517448A1 (en) * 1997-11-27 2005-03-23 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
EP0920135A3 (en) * 1997-11-27 2000-12-13 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
EP0920135A2 (en) * 1997-11-27 1999-06-02 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US6774833B2 (en) 1999-08-16 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7411535B2 (en) 1999-08-16 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7750833B2 (en) 1999-08-16 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US8089385B2 (en) 1999-08-16 2012-01-03 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US8754796B2 (en) 1999-08-16 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
JP2006332596A (en) * 2005-03-08 2006-12-07 Himax Optoelectronics Corp Decoder of digital-to-analog converter
JP2009296312A (en) * 2008-06-05 2009-12-17 Sony Corp Semiconductor device and solid-state imaging device

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