JPS58225637A - イオンビ−ム装置 - Google Patents

イオンビ−ム装置

Info

Publication number
JPS58225637A
JPS58225637A JP10779482A JP10779482A JPS58225637A JP S58225637 A JPS58225637 A JP S58225637A JP 10779482 A JP10779482 A JP 10779482A JP 10779482 A JP10779482 A JP 10779482A JP S58225637 A JPS58225637 A JP S58225637A
Authority
JP
Japan
Prior art keywords
electrodes
etched
discharge
gas
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10779482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481325B2 (cs
Inventor
Yoshitsugu Nishimoto
西本　佳嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10779482A priority Critical patent/JPS58225637A/ja
Publication of JPS58225637A publication Critical patent/JPS58225637A/ja
Publication of JPH0481325B2 publication Critical patent/JPH0481325B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP10779482A 1982-06-23 1982-06-23 イオンビ−ム装置 Granted JPS58225637A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779482A JPS58225637A (ja) 1982-06-23 1982-06-23 イオンビ−ム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779482A JPS58225637A (ja) 1982-06-23 1982-06-23 イオンビ−ム装置

Publications (2)

Publication Number Publication Date
JPS58225637A true JPS58225637A (ja) 1983-12-27
JPH0481325B2 JPH0481325B2 (cs) 1992-12-22

Family

ID=14468194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10779482A Granted JPS58225637A (ja) 1982-06-23 1982-06-23 イオンビ−ム装置

Country Status (1)

Country Link
JP (1) JPS58225637A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119237A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd エツチング方法
US4761199A (en) * 1985-04-10 1988-08-02 Canon Kabushiki Kaisha Shutter device for ion beam etching apparatus and such etching apparatus using same
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4357881B2 (ja) 2003-06-12 2009-11-04 ヤマハ発動機株式会社 小型船舶
JP2006037730A (ja) 2004-07-22 2006-02-09 Yamaha Marine Co Ltd 過給式エンジンの吸気装置
JP2006083713A (ja) 2004-09-14 2006-03-30 Yamaha Marine Co Ltd 過給装置の潤滑構造
JP2007062432A (ja) 2005-08-29 2007-03-15 Yamaha Marine Co Ltd 小型滑走艇

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127167A (en) * 1976-04-19 1977-10-25 Fujitsu Ltd Etching method
JPS5368075A (en) * 1976-11-29 1978-06-17 Nec Corp Manufacture of element containing micro pattern
JPS5832417A (ja) * 1981-08-21 1983-02-25 Matsushita Electric Ind Co Ltd プラズマエツチング装置及びプラズマエツチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127167A (en) * 1976-04-19 1977-10-25 Fujitsu Ltd Etching method
JPS5368075A (en) * 1976-11-29 1978-06-17 Nec Corp Manufacture of element containing micro pattern
JPS5832417A (ja) * 1981-08-21 1983-02-25 Matsushita Electric Ind Co Ltd プラズマエツチング装置及びプラズマエツチング方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761199A (en) * 1985-04-10 1988-08-02 Canon Kabushiki Kaisha Shutter device for ion beam etching apparatus and such etching apparatus using same
JPS63119237A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd エツチング方法
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치

Also Published As

Publication number Publication date
JPH0481325B2 (cs) 1992-12-22

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