JPS58199563A - ダンパ−ダイオ−ド付トランジスタ - Google Patents

ダンパ−ダイオ−ド付トランジスタ

Info

Publication number
JPS58199563A
JPS58199563A JP57083510A JP8351082A JPS58199563A JP S58199563 A JPS58199563 A JP S58199563A JP 57083510 A JP57083510 A JP 57083510A JP 8351082 A JP8351082 A JP 8351082A JP S58199563 A JPS58199563 A JP S58199563A
Authority
JP
Japan
Prior art keywords
region
emitter
base
transistor
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57083510A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228895B2 (cs
Inventor
Tadahiko Tanaka
田中　忠彦
Norihiro Shigeta
重田　典博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP57083510A priority Critical patent/JPS58199563A/ja
Publication of JPS58199563A publication Critical patent/JPS58199563A/ja
Publication of JPH0228895B2 publication Critical patent/JPH0228895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57083510A 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ Granted JPS58199563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57083510A JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57083510A JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Publications (2)

Publication Number Publication Date
JPS58199563A true JPS58199563A (ja) 1983-11-19
JPH0228895B2 JPH0228895B2 (cs) 1990-06-27

Family

ID=13804476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57083510A Granted JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Country Status (1)

Country Link
JP (1) JPS58199563A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008124671A1 (en) * 2007-04-09 2008-10-16 Analog Devices, Inc. Robust esd cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538570A (en) * 1976-07-12 1978-01-26 Nec Corp Semiconductor device
JPS5375762A (en) * 1976-12-16 1978-07-05 Fuji Electric Co Ltd Semiconductor device
JPS57208170A (en) * 1981-06-17 1982-12-21 Nec Corp Composite transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538570A (en) * 1976-07-12 1978-01-26 Nec Corp Semiconductor device
JPS5375762A (en) * 1976-12-16 1978-07-05 Fuji Electric Co Ltd Semiconductor device
JPS57208170A (en) * 1981-06-17 1982-12-21 Nec Corp Composite transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008124671A1 (en) * 2007-04-09 2008-10-16 Analog Devices, Inc. Robust esd cell
US7656009B2 (en) 2007-04-09 2010-02-02 Analog Devices, Inc. Robust ESD cell

Also Published As

Publication number Publication date
JPH0228895B2 (cs) 1990-06-27

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