JPS58194383A - Continuously assembled light-emitting diode - Google Patents
Continuously assembled light-emitting diodeInfo
- Publication number
- JPS58194383A JPS58194383A JP57077029A JP7702982A JPS58194383A JP S58194383 A JPS58194383 A JP S58194383A JP 57077029 A JP57077029 A JP 57077029A JP 7702982 A JP7702982 A JP 7702982A JP S58194383 A JPS58194383 A JP S58194383A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- emitting diodes
- light
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Abstract
Description
【発明の詳細な説明】 この発明は連続組立発光ダイオードに関する。[Detailed description of the invention] This invention relates to serially assembled light emitting diodes.
発光ダイオードは、従来、２本の端子を有する単体の素
子として組立てられることが多い。このため、自動組立
、スクリーニングなどが難しがった。Light emitting diodes are conventionally often assembled as a single device with two terminals. This made automatic assembly and screening difficult.
第１０図は、従来例に係る発光ダイオードの縦断面図で
ある。FIG. 10 is a longitudinal cross-sectional view of a conventional light emitting diode.
これは、樹脂モールド型発光ダイオード４０を示す。発
光ダイオード４０は、竪２本の端子４１．４２を用い、
一方の端子の上に発光ダイオードチップ４３をグイボン
ディングし、この電極と他の端子とをワイヤボンディン
グして接続している。そして、透明の樹脂によってモー
ルドしたものである。モールド部４５は端子４１．４２
を固定し、チップ、ワイヤを保護する作用及び集光作用
などがある。This shows a resin molded light emitting diode 40. The light emitting diode 40 uses two vertical terminals 41 and 42,
A light emitting diode chip 43 is bonded onto one terminal, and this electrode and the other terminal are connected by wire bonding. It is then molded with transparent resin. The mold part 45 has terminals 41 and 42.
It has the function of fixing the chips, protecting the chips and wires, and focusing the light.
このような発光ダイオードは、スクリーニング工程を意
識した電極構造が考慮されていない為、スクリーニング
工程が煩労になる。Since such a light emitting diode does not have an electrode structure that takes into account the screening process, the screening process becomes troublesome.
第１１図は、従来例に係る他の発光ダイオードの縦断分
解図である。FIG. 11 is a longitudinal exploded view of another conventional light emitting diode.
これは、金属ケース人発光ダイオード４６を示す。This shows a metal cased light emitting diode 46.
竪方向の端子４７を持つ金属製ヘッダ４８の上に、発光
ダイオードチップ４９をボンディングし、チップ４９の
電極ともう一本の端子（ヘッダにつながっていない）と
をワイヤボンディング５０ Ｌ、さらにガラス窓付金属
キャップ５１をヘッダ４８に蓋せ、融着しである。A light emitting diode chip 49 is bonded onto a metal header 48 having a vertical terminal 47, and the electrode of the chip 49 and another terminal (not connected to the header) are connected by wire bonding 50L and then a glass window. The attached metal cap 51 is placed on the header 48 and fused.
このような発光ダイオードは、単体のまま組立てるので
、組立を自動化するのが難しいし、スクリーニング工程
も煩労になる。Since such light emitting diodes are assembled as single units, it is difficult to automate the assembly, and the screening process is also troublesome.
スクリーニングというのは、素子その他の製品を通電状
態のまま数日〜数週間試験し、不良品か生じると、これ
を除去する工程をいう。Screening is a process in which devices and other products are tested for several days to several weeks while energized, and any defective products are removed.
素子その他の製品は、製造された時点で所望の性能条件
を満足していても、使用によって故障する。ある製品が
、故障する確率は、その寿命にわたって常に一定である
わけではない。故障率の高いのは、製造された後、数日
〜数週間であることが多い。これを初期不良という。内
在的に、もともと故障−の原因を持っており、これが通
電試験により早く外へ現われたものである。Even if elements and other products satisfy desired performance conditions at the time of manufacture, they break down with use. The probability that a product will fail is not always constant over its lifetime. The failure rate is often high within several days to several weeks after manufacturing. This is called initial failure. Internally, there is a cause of failure from the beginning, and this is something that appears early in the energization test.
初期不良の現われた発光ダイオードは除かなければなら
ない。これがスクリーニングである。Light emitting diodes showing initial defects must be removed. This is screening.
第１０図、第１１図のような発光ダイオードは各素子が
スクリーニング前の工程では個々が電気的に分離されて
おり、スクリーニングのため、各素子ことに通電しなけ
ればならない。専用の治具や試験器具を多数必要とし、
手数もかかり、煩労な作業である。In the light emitting diodes shown in FIGS. 10 and 11, each element is electrically isolated from each other in the process before screening, and each element must be energized for screening. Requires a large number of specialized jigs and testing equipment,
This is a time-consuming and troublesome work.
本発明は、これらの欠点を克服し、組立作業の自動化、
スクリーニング作業の簡略化に最適で、しかも放熱効果
の優れた連続組立発光ダイオードを与える事を目的とす
る。The present invention overcomes these drawbacks and automates assembly operations,
The purpose of this invention is to provide continuously assembled light emitting diodes that are optimal for simplifying screening work and have excellent heat dissipation effects.
以下、実施例を示す図面によって、本発明の構成、作用
及び効果を説明する。Hereinafter, the configuration, operation, and effects of the present invention will be explained with reference to drawings showing examples.
第１図は厚膜印刷基板の上に、行列状の発光ダイオード
集合を製作するための導体パターンを印刷したものの平
面図である。FIG. 1 is a plan view of a thick film printed substrate on which a conductor pattern for manufacturing a matrix of light emitting diodes is printed.
本発明は、金属製のハーメチックヘッダ・キャップ構造
や、樹脂モールド構造をとらない。まず厚膜印刷基板１
の上に、電極パターン２を厚膜印刷する。The present invention does not require a metal hermetic header/cap structure or a resin mold structure. First, thick film printed circuit board 1
The electrode pattern 2 is printed in a thick film on top of the electrode pattern 2.
厚膜印刷基板１は上下二層構造の板で、下は金属、上は
絶縁体とする。例えは下はアルミニウム １板、
上はアルミナ板の二層構造でも良い。また、下は鉄で、
上はホーロー質とすることもできる。The thick film printed circuit board 1 has a two-layer structure, the lower layer being metal and the upper layer being an insulator. For example, the bottom is a single aluminum plate,
The upper part may have a two-layer structure of an alumina plate. Also, the bottom is iron,
The top can also be made of enamel.
下に金属板を設けるのは、熱伝導を良くし、熱放散を促
進するためである。発光ダイオードはかなりの電流が流
れ、ジュール熱発生が著しい場合も多い。このため、熱
伝導の良い金属板を用いる。The purpose of providing a metal plate underneath is to improve heat conduction and promote heat dissipation. Light-emitting diodes draw a considerable amount of current and often generate significant Joule heat. For this reason, a metal plate with good thermal conductivity is used.
電極パターン２は、同じ単位形状が、左右前後に繰返す
周期的パターンてあ・る。つまり行列状である。左右前
後の１周期分、行列要素が、ひとつの単位発光ダイオー
ド３に対応する。The electrode pattern 2 has a periodic pattern in which the same unit shape is repeated left and right, front and back. In other words, it is matrix-like. Matrix elements corresponding to one cycle in the left and right directions correspond to one unit light emitting diode 3.
この例では５行６列の単位発光ダイオードを図示してい
る。一般に、ｍ行ｎ列の行列状に、単位発光ダイオード
を、−挙にあるいは連続的に加工してゆく。In this example, unit light emitting diodes arranged in five rows and six columns are illustrated. Generally, unit light emitting diodes are processed one at a time or continuously in a matrix of m rows and n columns.
電極パターンの印刷は、通常の厚膜印刷技術により行う
。所望のパターンに対応する部分を切抜いた薄い金属製
スクリーンを基板に当て、上から銀パラジウムなどの導
体ぺ、−ストをローラで塗布する。これを適当な温度で
乾燥、焼成して、電極パターンができる。The electrode pattern is printed using normal thick film printing technology. A thin metal screen with a portion corresponding to the desired pattern cut out is placed on the substrate, and a conductor paste such as silver palladium is applied from above with a roller. This is dried and fired at an appropriate temperature to form an electrode pattern.
アノード電極４．カソード電極５か、単位発光ダイオー
ド３の端部に並んで設けられる。中央には、発光ダイオ
ードチップをボンディングするためのチップ座６がある
。Anode electrode 4. The cathode electrode 5 is provided in line with the end of the unit light emitting diode 3. At the center is a chip seat 6 for bonding a light emitting diode chip.
カソード電極５、チップ座６と、隣接単位発光ダイオー
ドのアノード電極４が、連絡パターン部７により、ひと
つづきに連絡される。The cathode electrode 5, the chip seat 6, and the anode electrode 4 of the adjacent unit light emitting diode are connected one after another by the connection pattern part 7.
単位発光ダイオード３を分ける境界線８は破線で示しで
ある。境界線８に対応し、厚膜印刷基板１の裏面には、
金属板部に深く切込まれた分割用溝９が設けである。A boundary line 8 dividing the unit light emitting diodes 3 is shown by a broken line. Corresponding to the boundary line 8, on the back side of the thick film printed circuit board 1,
A dividing groove 9 is provided deeply cut into the metal plate.
隣接発光ダイオード間のカソード電極５とアノード電極
４が連続している、というのは重要な特徴である。An important feature is that the cathode electrodes 5 and anode electrodes 4 between adjacent light emitting diodes are continuous.
ｍ行ｎ列の繰返しパターンのチップ座６へ、発光ダイオ
ードチップ１０を連続的にボンディングしてゆく。左右
前後へのピッチは定っているので、ボンディング工程は
、容易に自動化することができる。The light emitting diode chips 10 are continuously bonded to the chip seats 6 in a repeating pattern of m rows and n columns. Since the pitch from left to right and front to back is fixed, the bonding process can be easily automated.
次に、アノード電極４につづく連絡パターン７と、発光
ダイオードチップ１０のＰ型置極部とをワイヤボンディ
ング１１する。ワイヤボンディングも自動化できる。Next, the connection pattern 7 continuing to the anode electrode 4 and the P-type electrode portion of the light emitting diode chip 10 are wire-bonded 11. Wire bonding can also be automated.
第２図はこのような工程後の状態の発光ダイオード群の
１行分だけの斜視図である。FIG. 2 is a perspective view of only one row of the group of light emitting diodes after such a process.
この例では、厚膜印刷基板１の両側に、アノード側附加
領域１２、及びカソード側附加領域１３が設けられ、そ
れぞれ各行ごとに、スクリーニング用電極１４ 、１５
が余分に印刷されている。スクリーニング用電極は行の
数ｍだけ分離して設けられているが、これを全て統合し
てひとつにしても良い。In this example, an anode side additional area 12 and a cathode side additional area 13 are provided on both sides of the thick film printed substrate 1, and screening electrodes 14, 15 are provided for each row.
are printed in excess. Although the screening electrodes are provided separated by several meters of rows, they may all be integrated into one.
スクリーニング用電極１４ 、１５は、隣接発光ダイオ
ードのアノード、カソードにつながっている。The screening electrodes 14 and 15 are connected to the anode and cathode of adjacent light emitting diodes.
第２図に示すように、チップ座６に発光ダイオードチッ
プ１０を設け、これとアノード側パターンをワイヤボン
ディング１１すると、各行のｍ個の単位発光ダイオード
３は、互に直列接続される事になる。カソード電極５、
チップ座６と隣接単位発光ダイオードのアノード電極４
はひと続きのパターンでできているからである。スクリ
ーニング用電極１４ 、１５は、発光ダイオード群の直
列体の始端、終端となる。As shown in FIG. 2, when a light emitting diode chip 10 is installed on the chip seat 6 and the anode side pattern is wire bonded 11, the m unit light emitting diodes 3 in each row are connected in series. . cathode electrode 5,
Chip seat 6 and adjacent unit light emitting diode anode electrode 4
This is because it is made up of a continuous pattern. The screening electrodes 14 and 15 serve as the starting and ending ends of a series array of light emitting diodes.
第３図は単位発光ダイオードの拡大平面図である。FIG. 3 is an enlarged plan view of a unit light emitting diode.
アノード電極４の側の連絡パターン７の一部は絶縁ガラ
スパターン１６によって覆われている。ガラスの厚膜印
刷は、電極パターン２の印刷に続いて予め行っておく。A part of the communication pattern 7 on the side of the anode electrode 4 is covered by an insulating glass pattern 16 . Thick film printing of glass is performed in advance following printing of the electrode pattern 2.
この上へ、さらに金属キャップを取付ける。Attach a metal cap on top of this.
第４図は金属キャップを取付けた単位発光ダイオードの
拡大平面図、第５図は第４図中のＶ−■断面図、第６図
は単位発光ダイオードの正面図である。FIG. 4 is an enlarged plan view of a unit light emitting diode with a metal cap attached, FIG. 5 is a sectional view taken along the line V--■ in FIG. 4, and FIG. 6 is a front view of the unit light emitting diode.
金属キャップ１７は皿型断面で、中央にガラス窓１８を
有する。金属キャップ１７は、ハンダ又は導電性接着剤
で厚膜印刷基板１に固着される。金属キャップ１７はカ
ソード電極５と電気的に接続される。The metal cap 17 has a dish-shaped cross section and a glass window 18 in the center. The metal cap 17 is fixed to the thick film printed circuit board 1 with solder or conductive adhesive. Metal cap 17 is electrically connected to cathode electrode 5 .
金属キャップ１７の取付も、第１図のような行列状態の
ままで行う。これも自動化工程で行うと良い。
：１ｍｍ
行列の発光ダイオードマトリックスが、このようにして
、−挙に、あるいは連続的に作製される。Attachment of the metal caps 17 is also carried out in the same state as shown in FIG. It is also best to do this in an automated process.
:1mm
A matrix of light emitting diodes in rows and columns is thus produced - one at a time or one after the other.
行列状態で、或は第２図のように、行ことに割った状態
でスクリーニングする。Screening is performed in a matrix state or in a state divided into rows as shown in FIG.
発光ダイオード群は直列に接続されているから、両端の
スクリーニング用電極１４ 、１５間に適当な電源を接
続すると、発光ダイオード群の全てに同一電流を流すこ
とができる。Since the light emitting diodes are connected in series, by connecting an appropriate power source between the screening electrodes 14 and 15 at both ends, the same current can be passed through all of the light emitting diodes.
通電状態で、数日〜数週間保ち、電流、電圧、輝度特性
などを試験する。初期不良の現われたものは除く。境界
線８に沿って、厚膜印刷基板１をスクライブし、単位発
光ダイオードに分割する。Keep the power on for several days to several weeks and test the current, voltage, brightness characteristics, etc. Excludes items that show initial defects. The thick film printed substrate 1 is scribed along the boundary line 8 and divided into unit light emitting diodes.
分割用溝９は分割作業を助ける作用がある。分割方法は
ミゾ以外にミゾなしで、シャーリングによる切断又はミ
シン穴でもよい。The dividing groove 9 has the effect of assisting the dividing operation. The dividing method may be cutting by shirring or perforation without using grooves other than grooves.
既に述べたように、厚膜印刷基板１は、下方に金属層１
９、上方に絶縁体層２ｏを設けた２層構造を有する。As already mentioned, the thick film printed substrate 1 has a metal layer 1 underneath.
9. It has a two-layer structure with an insulator layer 2o provided above.
第７図は単位発光タイオードの底面図であるが、裏面は
一様な金属層１９となっている。FIG. 7 is a bottom view of the unit light emitting diode, and the back surface is a uniform metal layer 19.
分割した単位発光ダイオードは、第４図〜第７図に示す
ように、薄い矩形状である。このまま、ハイブリッドＩ
Ｃの上へチップ部品として実装する事ができる。The divided unit light emitting diodes have a thin rectangular shape, as shown in FIGS. 4 to 7. Just like this, Hybrid I
It can be mounted on C as a chip component.
単にチップ部品としてでなく、プリント基板などに実装
したい場合は、第８図、第９図に示すように、電極４，
５からリード２３を延長して設けても良い。If you want to mount it on a printed circuit board etc. instead of simply as a chip component, as shown in FIGS. 8 and 9, the electrode 4,
The lead 23 may be extended from the lead 5.
この例では、窓つきの金属キャップ１７によって、発光
ダイオードの内部空間を被覆している。金属キャップは
堅牢で、耐熱性に優れるか、比較的コスト高である。本
発明に於ては、金属キャップのかわりにプラスチックキ
ャップを用いても良いし、透明のプラスチック素材でモ
ールドすることとしても良い。In this example, a metal cap 17 with a window covers the interior space of the light emitting diode. Metal caps are robust, have good heat resistance, or are relatively expensive. In the present invention, a plastic cap may be used instead of the metal cap, or it may be molded with a transparent plastic material.
厚膜印刷基板１は、金属層としてアルミ、絶縁体層とし
てアルミナで構成できる。また鉄とホーローとを二層構
造としてもよい。The thick film printed board 1 can be made of aluminum as the metal layer and alumina as the insulator layer. Alternatively, it may have a two-layer structure of iron and enamel.
効果を述べる。Describe the effects.
（１）厚膜印刷基板上に、多数の単位発光ダイオードを
行列状に組立てる事としたので、発光ダイオードチップ
の取付、ワイヤボンディング、キャップの取付などの組
立作業を自動化する事ができる。能率的である。(1) Since a large number of unit light emitting diodes are assembled in rows and columns on a thick film printed circuit board, assembly operations such as mounting of light emitting diode chips, wire bonding, and cap mounting can be automated. Be efficient.
（２）隣接する単位発光ダイオードのカソード、アノー
ド電極が連続する電極パターンを印刷し、組立が終ると
、発光ダイオードは直列に接続されるようになる。この
状態で、複数個の発光ダイオード群に通電できる。スク
リーニング工程を簡便にする事ができる。(2) Print an electrode pattern in which the cathode and anode electrodes of adjacent unit light emitting diodes are continuous, and when the assembly is completed, the light emitting diodes are connected in series. In this state, electricity can be applied to the plurality of light emitting diode groups. The screening process can be simplified.
（３）熱伝導の良い金属を厚膜印刷基板の素材として利
用するから、熱放散に優れる。発光ダイオードはジュー
ル熱により熱せられ、特性が変動する場合があるが、積
極的に熱を放散するから、安定した駆動が可能になる。(3) Since a metal with good thermal conductivity is used as the material for the thick film printed circuit board, it has excellent heat dissipation. Although light-emitting diodes are heated by Joule heat and their characteristics may fluctuate, they actively dissipate heat, making stable driving possible.
このように有用な発明である。In this way, it is a useful invention.
この発明の用途は、
ｆａｔ 光データリンク、光ワイヤレスリモコン（テ
レビ等の）などの光送信部
＋ｂ＞ パネル表示などの表示部
（Ｃ１光利用の近接スイッチ
など、広い用途が拡っている。The present invention has a wide range of applications, such as fat optical data links, optical transmission units such as optical wireless remote controllers (for televisions, etc.), display units such as panel displays (proximity switches using C1 light, etc.).
第１図は厚膜印刷基板の上に、発光ダイオード集合を行
列状に製作するための導体電極パターンを印刷したもの
の平面図。
第２図は電極パターンの上に発光ダイオードチップをボ
ンドし、ワイヤボンディングした発光ダイオード集合の
１行分のみの斜視図。
第３図は金属キャップを取付ける前の単位発光ダイオー
ドの拡大平面図。
第４図は金属キャップを取付けた状態の単位発光ダイオ
ードの拡大平面図。
第５図は第４図中のＶ−■断面図。
第６図は単位発光ダイオードの正面図。
第７図は単位発光ダイオードの底面図。
第８図はリードを取付けた単位発光ダイオードの平面図
。
第９図は同じものの縦断面図。
第１０図は従来例に係る樹脂モールド型発光ダイオード
の縦断面図。
第１１図は従来例に係る金属ケース人発光ダイオードの
分解正面図。
１・・・・・・厚膜印刷基板
２・・・・・・電極パターン
３・・・・・・単位発光ダイオード
４・・・・・・アノード電極
５・・・・・・カソード電極
６・・・・・・チップ座
７・・・・・・連絡パターン部
８・・・・・・境 界 線
９・・・・・・分割用溝
１０・・・・・・発光ダイオードチップ１１・・・・・
・ワイヤボンディング
１２ 、１３・・・・・・附加領域
１４ 、１５・・・・・・スクリーニング用電極１６・
・・・・・絶縁ガラスパターン
１７・・・・・・金属キャップ
１８・・・・・・ガラス窓
１９・・・・・・金 属 層
２０・・・・絶縁体層
２３・・・・・・リード
発 明 者 坂 本 福 馬
戸 １） 敏 宏
西 沢 秀 明
手続補正書ｍ発）
特許庁長官 島 １）春 樹 殿
”ＩＦ （’ｔ′（Ｄ ′７］Ｅ 特願昭５７−７７
０２９２発明の名称 連続組立発光ダイオード３補正を
する者
事件との関係 特許出願人
居 所大阪市東区北浜５丁目１５番地
名 称 （２１３）住友電気工業株式会社代表者社長
亀 井 正 夫
４、代 理 人
弓５３７
住 所 大阪市東成区中道３丁目１５番１６号「特許請
求の範囲」の欄及び
（１） 明細書第８頁第１３行目
「ハンダ」とあるのを１一般接着剤」と訂日
正する。
（２） 同書第８頁第１４行目〜１５行目「厚膜印刷
基板１に固着される。」と「金属キャップ１７・・・・
・・」の間に「導電性接着剤で固着した場合」を挿入す
る。
（３）同書第８頁第１４目と１６行目の間に「また、パ
ターン形状によっては金属キャップをハンダ付けしても
よい。」を挿入する。
（４） 同書第８頁第１４目「このまま、・・・」か
ら第４行目「単にチップ部品としてでなく、」までを削
除する。
（５）特許請求の範囲については別紙のとおり特許請求
の範囲
カソード電極、アノード電極及びチップ座よシなる単位
発光ダイオードパターンが行列状に或は二ａ匹繰返す電
極パターンを印刷した厚膜印刷基板と、チップ座の上に
固着被覆されカソード電極とアノード電極に接稗された
発光ダイオードチップとよシ成シ、隣接する単位発光ダ
イオードのカソード電極とアノード電極とが連続してお
り、かつ厚膜印刷基板は金属層と絶縁体層よシなる二層
構造である事を特徴とする連続組立発光ダイオード。FIG. 1 is a plan view of a thick-film printed substrate printed with a conductor electrode pattern for producing a matrix of light emitting diodes. FIG. 2 is a perspective view of only one row of a light emitting diode assembly in which light emitting diode chips are bonded onto an electrode pattern and wire bonded. FIG. 3 is an enlarged plan view of a unit light emitting diode before attaching a metal cap. FIG. 4 is an enlarged plan view of a unit light emitting diode with a metal cap attached. FIG. 5 is a sectional view taken along the line V-■ in FIG. 4. FIG. 6 is a front view of a unit light emitting diode. FIG. 7 is a bottom view of a unit light emitting diode. FIG. 8 is a plan view of a unit light emitting diode with leads attached. FIG. 9 is a longitudinal sectional view of the same thing. FIG. 10 is a longitudinal sectional view of a conventional resin molded light emitting diode. FIG. 11 is an exploded front view of a conventional metal case human light emitting diode. 1... Thick film printed substrate 2... Electrode pattern 3... Unit light emitting diode 4... Anode electrode 5... Cathode electrode 6. ...Chip seat 7 ...Connection pattern section 8 ...Boundary line 9 ...Dividing groove 10 ...Light-emitting diode chip 11 ... ...
・Wire bonding 12, 13...additional area 14, 15...screening electrode 16・
... Insulating glass pattern 17 ... Metal cap 18 ... Glass window 19 ... Metal layer 20 ... Insulator layer 23 ...・Lead inventor Fuku Mado Sakamoto 1) Toshi Hironishi Hideaki Sawa Akira Procedural Amendment M) Commissioner of the Patent Office Shima 1) Haruki Tono” IF ('t' (D '7) E Patent Application 1977- 77
0292 Title of the invention Relationship with the Continuously Assembled Light Emitting Diode 3 Amendment Case Patent Applicant Residence 5-15 Kitahama, Higashi-ku, Osaka Name (213) Representative President of Sumitomo Electric Industries, Ltd.
Masao Kamei 4, Agent Jinkyu 537 Address 3-15-16 Nakamichi, Higashinari-ku, Osaka City "Claims" column and (1) "Solder" on page 8, line 13 of the specification. The date has been corrected to ``1 general adhesive.'' (2) On page 8 of the same book, lines 14 and 15, “It is fixed to the thick film printed circuit board 1.” and “Metal cap 17...
Insert "When fixed with conductive adhesive" between "...". (3) Insert "Also, a metal cap may be soldered depending on the pattern shape" between lines 14 and 16 on page 8 of the same book. (4) Delete the text from page 8 of the same book, line 14, ``As is...'' to line 4, ``Not just as a chip component.'' (5) The scope of the claims is as shown in the attached sheet.ClaimsA thick film printed substrate printed with an electrode pattern in which unit light emitting diode patterns consisting of a cathode electrode, an anode electrode, and a chip seat are repeated in a matrix or in pairs. and a light emitting diode chip which is fixedly coated on the chip seat and glued to the cathode electrode and the anode electrode. A continuously assembled light emitting diode characterized in that the printed circuit board has a two-layer structure consisting of a metal layer and an insulator layer.
Claims (1)
発光ダイオードパターンが行列状に繰返す電極パターン
を印刷した厚膜印刷基板と、チップ座の上に固着被覆さ
れカソード電極とアノード電極に接続された発光ダイオ
ードチップとより成り、隣接する単位発光ダイオードの
カソード電極とアノード電極とが連続しており、かっ厚
膜印刷基板は金属層と絶縁体層よりなる二層構造である
事を特徴とする連続組立発光ダイオード。A thick film printed substrate with an electrode pattern printed with a unit light emitting diode pattern consisting of a cathode electrode, an anode electrode, and a chip seat that repeats in a matrix, and a light emitting diode chip that is fixedly coated on the chip seat and connected to the cathode electrode and anode electrode. A continuously assembled light emitting diode characterized in that the cathode electrode and anode electrode of adjacent unit light emitting diodes are continuous, and the thick film printed substrate has a two-layer structure consisting of a metal layer and an insulator layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57077029A JPS58194383A (en) | 1982-05-07 | 1982-05-07 | Continuously assembled light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57077029A JPS58194383A (en) | 1982-05-07 | 1982-05-07 | Continuously assembled light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58194383A true JPS58194383A (en) | 1983-11-12 |
Family
ID=13622315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57077029A Pending JPS58194383A (en) | 1982-05-07 | 1982-05-07 | Continuously assembled light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58194383A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02104658U (en) * | 1989-02-06 | 1990-08-20 | ||
| EP0398575A2 (en) * | 1989-05-17 | 1990-11-22 | AT&T Corp. | Method of manufacturing optical assemblies |
| US5278432A (en) * | 1992-08-27 | 1994-01-11 | Quantam Devices, Inc. | Apparatus for providing radiant energy |
| WO2003023857A2 (en) * | 2001-09-13 | 2003-03-20 | Lucea Ag | Led-luminous panel and carrier plate |
| WO2004004017A2 (en) * | 2002-06-26 | 2004-01-08 | Osram Opto Semiconductors Gmbh | Surface-mountable light-emitting diode and/or photodiode and method for the production thereof |
| JP2004014857A (en) * | 2002-06-07 | 2004-01-15 | Stanley Electric Co Ltd | Chip type optical semiconductor device |
| JP2010182981A (en) * | 2009-02-07 | 2010-08-19 | Ngk Spark Plug Co Ltd | Mother board for multiple wiring boards |
| KR101064146B1 (en) | 2010-02-26 | 2011-09-16 | 박재순 | Surface mount light emitting unit array, repair method thereof and light emitting unit for repair |
| JP2014072330A (en) * | 2012-09-28 | 2014-04-21 | Sumitomo Chemical Co Ltd | Method of manufacturing individual mounting board and aggregate metal base circuit board |
| JP2020180943A (en) * | 2019-04-26 | 2020-11-05 | 日亜化学工業株式会社 | Light-emitting diode inspection device |
| WO2021094177A1 (en) * | 2019-11-15 | 2021-05-20 | Aledia | Process for manufacturing a set of light emitters |
-
1982
- 1982-05-07 JP JP57077029A patent/JPS58194383A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02104658U (en) * | 1989-02-06 | 1990-08-20 | ||
| EP0398575A2 (en) * | 1989-05-17 | 1990-11-22 | AT&T Corp. | Method of manufacturing optical assemblies |
| US5278432A (en) * | 1992-08-27 | 1994-01-11 | Quantam Devices, Inc. | Apparatus for providing radiant energy |
| WO2003023857A3 (en) * | 2001-09-13 | 2004-06-03 | Lucea Ag | Led-luminous panel and carrier plate |
| WO2003023857A2 (en) * | 2001-09-13 | 2003-03-20 | Lucea Ag | Led-luminous panel and carrier plate |
| JP2004014857A (en) * | 2002-06-07 | 2004-01-15 | Stanley Electric Co Ltd | Chip type optical semiconductor device |
| WO2004004017A2 (en) * | 2002-06-26 | 2004-01-08 | Osram Opto Semiconductors Gmbh | Surface-mountable light-emitting diode and/or photodiode and method for the production thereof |
| WO2004004017A3 (en) * | 2002-06-26 | 2004-08-05 | Osram Opto Semiconductors Gmbh | Surface-mountable light-emitting diode and/or photodiode and method for the production thereof |
| JP2010182981A (en) * | 2009-02-07 | 2010-08-19 | Ngk Spark Plug Co Ltd | Mother board for multiple wiring boards |
| KR101064146B1 (en) | 2010-02-26 | 2011-09-16 | 박재순 | Surface mount light emitting unit array, repair method thereof and light emitting unit for repair |
| JP2014072330A (en) * | 2012-09-28 | 2014-04-21 | Sumitomo Chemical Co Ltd | Method of manufacturing individual mounting board and aggregate metal base circuit board |
| JP2020180943A (en) * | 2019-04-26 | 2020-11-05 | 日亜化学工業株式会社 | Light-emitting diode inspection device |
| WO2021094177A1 (en) * | 2019-11-15 | 2021-05-20 | Aledia | Process for manufacturing a set of light emitters |
| FR3103322A1 (en) * | 2019-11-15 | 2021-05-21 | Aledia | Manufacturing process of a set of light emitters |
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