JPS58190903A - Formation of optical waveguide - Google Patents

Formation of optical waveguide

Info

Publication number
JPS58190903A
JPS58190903A JP57073312A JP7331282A JPS58190903A JP S58190903 A JPS58190903 A JP S58190903A JP 57073312 A JP57073312 A JP 57073312A JP 7331282 A JP7331282 A JP 7331282A JP S58190903 A JPS58190903 A JP S58190903A
Authority
JP
Japan
Prior art keywords
optical waveguide
substrate
dielectric substrate
thin film
light energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57073312A
Other languages
Japanese (ja)
Inventor
Katsuzo Uenishi
上西 勝三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57073312A priority Critical patent/JPS58190903A/en
Publication of JPS58190903A publication Critical patent/JPS58190903A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/134Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1342Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using diffusion

Abstract

PURPOSE:To form a diffusion layer of an optical waveguide to a dielectric substrate, by irradiating the optical energy to the surface of the transparent dielectric substrate after forming a metallic thin film for optical waveguide in order to produce a reaction between the metallic thin film and the dielectric substrate. CONSTITUTION:A metallic thin film 12 is formed on the surface of a dielectric substrate 11 and at the part where an optical waveguide is formed. Then the light energy is irradiated from a light source 14 through the rear side of the substrate 11. The light energy is not virtually absorbed by the substrate and absorbed by the film 12. Then the heat is selectively generated to produce a reaction between the film 12 and the substrate 11. As a result, a metal (e.g., titanium) is diffused into the substrate 11. The absorbing coefficient of the optical energy of <=600nm wavelengths increases at the metal diffused part. The diffusion is accelerated to form a diffusion layer 16. Therefore it is possible to form an optical waveguide in a short time without heating up the entire part of the substrate 11 but with the local heating which is carried out by making use of the selective absorption of the light energy.

Description

【発明の詳細な説明】 この発明は、金属不純物拡散により光導波路を形成する
方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming an optical waveguide by diffusion of metal impurities.

従来の光導波路の形成方法を第1図を用いて説明する。A conventional method for forming an optical waveguide will be explained with reference to FIG.

第1図囚において、1はたとえばニオブ酸リチウム(L
2 Nb Os )のような誘電体基板であり、まず、
この誘電体基板1の上にホトレジスト(たとえばAZ1
350 ) 2によシ光導波路の逆パターンを形成する
。次に、第1図(B)に示すように金属薄膜たとえばチ
タン3を全面に蒸着する。次に、た、とえばアセトンに
つけホトレジスト2を除去することにより、第1図(Q
に示すように、前記チタン3を、光導波路を形成する部
分にのみ残す。しかる後、熱処理炉(970°C)で5
〜7時間加熱処理する。この加熱処理を行うと、チタン
3からチタンが0.5〜2μm程度、誘電体基板1に拡
散し、第1図0に示すように拡散層4が形成される。こ
の拡散層4峠、屈折率が、誘電体基板またとえばニオブ
酸リチウムの層の屈折率よシも約1%小さくなるので、
光導波路として機能させることができる。
In Figure 1, 1 is, for example, lithium niobate (L
2NbOs), and first,
A photoresist (for example, AZ1
350) Form a reverse pattern of the optical waveguide according to 2. Next, as shown in FIG. 1(B), a metal thin film such as titanium 3 is deposited over the entire surface. Next, by removing the photoresist 2 by soaking it in, for example, acetone, the photoresist 2 shown in FIG.
As shown in FIG. 3, the titanium 3 is left only in the portion where the optical waveguide will be formed. After that, heat treatment furnace (970°C)
Heat treatment for ~7 hours. When this heat treatment is performed, titanium from the titanium 3 is diffused into the dielectric substrate 1 by about 0.5 to 2 μm, and a diffusion layer 4 is formed as shown in FIG. The refractive index of this diffusion layer 4 is about 1% smaller than that of the dielectric substrate, such as a layer of lithium niobate.
It can function as an optical waveguide.

しかるに、このような従来の方法では、全体を約100
0°Cに加熱する熱処理、しかも5〜7時間という長時
間の熱処理を必要とする欠点があった。
However, with this conventional method, the total number of
There was a drawback that it required heat treatment to be heated to 0° C. and for a long time of 5 to 7 hours.

この発明は上記の点に鑑みなされたもので、局部加熱(
局部発熱)により短時間で拡散層(光導波路)を形成す
ることができる光導波路の形成方法を提供することを目
的とする。
This invention was made in view of the above points, and is based on local heating (
An object of the present invention is to provide a method for forming an optical waveguide that can form a diffusion layer (optical waveguide) in a short time using local heat generation.

以下この発明の実施例を第2図を参照して説明する。第
2図において、11はニオブ酸リチウムのような光学的
に透明な誘電体基板であシ、表面には、光導波路を形成
したい部分のみに、たとえばチタンからなる金属薄膜1
2が形成されている。
An embodiment of the present invention will be described below with reference to FIG. In FIG. 2, reference numeral 11 denotes an optically transparent dielectric substrate such as lithium niobate, and a metal thin film 1 made of titanium, for example, is coated only on the surface where an optical waveguide is to be formed.
2 is formed.

そして、この誘電体基板11は、表裏を逆にして、つま
シ表面側がサポート台13側に位置するようにして、そ
のサポート台13上に支持される。14は、たとえば赤
外線ランプからなる光源で、前記誘電体基板11に、そ
の表面側から光エネルギーを照射する。15は、その光
源14と誘電体基板11との間に介在されたレンズ系で
ある。
The dielectric substrate 11 is supported on the support stand 13 with the front and back sides reversed so that the front side of the tab is located on the support stand 13 side. Reference numeral 14 denotes a light source consisting of, for example, an infrared lamp, which irradiates the dielectric substrate 11 with light energy from its surface side. 15 is a lens system interposed between the light source 14 and the dielectric substrate 11.

すなわち、実施例では、誘電体基板11の表面に、光導
波路を形成したい部分において金属薄膜12を形成した
後、誘電体基板11の表面より、光源14からの光エネ
ルギーを照射する。すると、光エネルギーは、誘電体が
板11には殆ど吸収されないで金属薄膜12で吸収きれ
る。したがって、金属#膜12が選択的に発熱する。ぞ
して、この発熱によ多金属薄膜12と誘電体基板11と
が反応を起し、金属薄膜12から金属(ytとえはチタ
ン)が誘電体基板11中に拡散する。錦1体基板ll中
に金属が拡散すると、その金属が拡散された部分におい
ては、600nm以下の波長の光エネルギーの吸収係数
が増大する。したがって、金属薄膜12だけでなく、前
記拡散部分でも、光エネルギーの吸収による発熱が起シ
、拡散が促進され、結局、誘電体基板11に第2図に示
すように拡散層16が形成される。
That is, in the embodiment, after the metal thin film 12 is formed on the surface of the dielectric substrate 11 at a portion where an optical waveguide is to be formed, the surface of the dielectric substrate 11 is irradiated with light energy from the light source 14 . Then, the light energy is hardly absorbed by the dielectric plate 11 and is completely absorbed by the metal thin film 12. Therefore, the metal # film 12 selectively generates heat. Then, due to this heat generation, a reaction occurs between the multimetal thin film 12 and the dielectric substrate 11 , and metal (yt or titanium) is diffused from the metal thin film 12 into the dielectric substrate 11 . When metal is diffused into the brocade one-piece substrate 11, the absorption coefficient of light energy having a wavelength of 600 nm or less increases in the portion where the metal is diffused. Therefore, not only the metal thin film 12 but also the diffusion portion generates heat due to the absorption of light energy, promoting diffusion, and eventually a diffusion layer 16 is formed on the dielectric substrate 11 as shown in FIG. .

以上の実施例から明らがなように、この発明の方法にお
いては、光エネルギーを照射することによシ、金属薄膜
と誘電体基板との反応を起させ、光導波路としての拡散
層を誘電体基板に形成する。
As is clear from the above embodiments, in the method of the present invention, a reaction is caused between the metal thin film and the dielectric substrate by irradiating light energy, and the diffusion layer as an optical waveguide is formed into a dielectric material. formed on the body substrate.

そして、この発明の方法によれば、誘電体基板全体を加
熱することなしに、光エネルギーの選択的吸収を利用し
て局部加熱(局部発熱)にょシ短時間で光導波路を形成
することができる。
According to the method of the present invention, an optical waveguide can be formed in a short time by utilizing selective absorption of optical energy without heating the entire dielectric substrate. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の光導波路の形成方法を説明するための断
面図、第2ヅ1はこの発明の先導波路の形成方法の実施
例を説明するための図である。 11・・・誘電体基板、12・・・金属薄膜、14・・
・光源、16・・・拡散層。 特許出願人 沖通気工業株式会社 矛1図 手続補正書 昭和57年9月311 特許庁長官若 杉 和 失敗 1、事件の表示 昭和57年 特 許 願第 73312  号2、発明
の名称 光導波路の形成方法 3、補正をする者 事件との関係    特  許 出願人(029)  
沖電気工業株式会社 4、代理人 5、補正命令の日付  昭和  年  月  日(自発
)6、補正の対象 明細書の特許請求の範囲ンよび発明の詳細な説明の欄 7、補正の内容 別紙の通り (1)明細書の「2特許請求の範囲」を別紙の通り訂正
する。 (2)  明細書1頁12行「不純物」を削除する。 (3)同1頁16行r L2NbO,JをrLiNbO
mJと訂正する。 2、特許請求の範囲 光学的に透明な誘電体基板の一方の面に、光導波路を形
成したい部分に金属薄膜を形成した後、光エネルギーを
照射することにより金属薄膜と誘電体基板との反応を起
させ、光導波路としての拡散層を誘電体基板に形成する
ことを特徴とする光導波路の形成方法。
FIG. 1 is a sectional view for explaining a conventional method for forming an optical waveguide, and FIG. 2A is a diagram for explaining an embodiment of the method for forming a leading waveguide according to the present invention. 11... Dielectric substrate, 12... Metal thin film, 14...
- Light source, 16...diffusion layer. Patent Applicant Oki Ketsu Kogyo Co., Ltd. Figure 1 Procedural Amendment September 1980 311 Commissioner of the Patent Office Kazu Wakasugi Failure 1, Indication of the Case 1982 Patent Application No. 73312 2 Name of the invention Formation of optical waveguide Method 3: Relationship with the person making the amendment Patent applicant (029)
Oki Electric Industry Co., Ltd. 4, Agent 5, Date of amendment order: 1939, Month, Day (voluntary) 6, Scope of claims of the specification to be amended and Detailed explanation of the invention column 7, Contents of the amendment attached. Street (1) "Claims 2" in the specification are corrected as shown in the attached sheet. (2) Delete “Impurities” on page 1, line 12 of the specification. (3) Same page 1 line 16 r L2NbO, J to rLiNbO
Correct it to mJ. 2. Claims After a thin metal film is formed on one surface of an optically transparent dielectric substrate in a portion where an optical waveguide is desired to be formed, a reaction between the thin metal film and the dielectric substrate is caused by irradiating light energy. 1. A method for forming an optical waveguide, comprising: forming a diffusion layer as an optical waveguide on a dielectric substrate.

Claims (1)

【特許請求の範囲】[Claims] 光学的に透明な誘電体基板の一方の面に、光導波路を形
成したい部分において金属薄膜を形成した後、光エネル
ギーを照射することにより金属薄膜と誘電体基板との反
応を起させ、先導波路としての拡散層を誘電体基板に形
成することを%徴とする先導波路の形成方法。
After forming a metal thin film on one side of an optically transparent dielectric substrate in the area where an optical waveguide is to be formed, a reaction between the metal thin film and the dielectric substrate is caused by irradiation with light energy to form a guiding waveguide. A method for forming a leading waveguide, which comprises forming a diffusion layer on a dielectric substrate.
JP57073312A 1982-05-04 1982-05-04 Formation of optical waveguide Pending JPS58190903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57073312A JPS58190903A (en) 1982-05-04 1982-05-04 Formation of optical waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57073312A JPS58190903A (en) 1982-05-04 1982-05-04 Formation of optical waveguide

Publications (1)

Publication Number Publication Date
JPS58190903A true JPS58190903A (en) 1983-11-08

Family

ID=13514524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57073312A Pending JPS58190903A (en) 1982-05-04 1982-05-04 Formation of optical waveguide

Country Status (1)

Country Link
JP (1) JPS58190903A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006285A (en) * 1988-07-28 1991-04-09 Lockheed Missiles & Space Company, Inc. Electro-optic channel waveguide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894447A (en) * 1972-03-13 1973-12-05
JPS5533042A (en) * 1978-08-29 1980-03-08 Toshiba Mach Co Ltd Temperature-compenstated solenoid

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894447A (en) * 1972-03-13 1973-12-05
JPS5533042A (en) * 1978-08-29 1980-03-08 Toshiba Mach Co Ltd Temperature-compenstated solenoid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006285A (en) * 1988-07-28 1991-04-09 Lockheed Missiles & Space Company, Inc. Electro-optic channel waveguide

Similar Documents

Publication Publication Date Title
KR900001646B1 (en) Flare reduction in hologrames
US5910256A (en) Method for manufacturing a diffraction type optical element
JPH0881231A (en) Method for forming photo-induced bragg lattice
JP2003075826A (en) Reflection type liquid crystal display device and its manufacturing method
De Cruz et al. Laser removal of contaminants from painted surfaces
JPS57104217A (en) Surface heat treatment
JPS58190903A (en) Formation of optical waveguide
DE2934343A1 (en) METHOD FOR REPRODUCTING DISPLAYED DISKS
JPS55153327A (en) Laser annealing device
JPS61267384A (en) Laser irradiation apparatus
JP2005070243A (en) Method for glass coating of optical material
JP2004504074A (en) Method and apparatus for heat treatment of surface layer
US3900249A (en) Soft-focus optical element
JPS57176007A (en) Controlling method for luneberg lens
JPH10177103A (en) Microlens structure
JPH0434505A (en) Optical waveguide type device and production thereof
JPS57130435A (en) Annealing method of matter by light beam
JPS5787128A (en) Correcting method of mask
CA2227338A1 (en) Method for controlling refractive index of silica glass
JPS58184106A (en) Reproducing method of fiber optical system
US3240105A (en) Method of making an infrared image transmitting device
JPS5955344A (en) Local heating method of thin film
JPS57190984A (en) Production of hologram
JPS5788411A (en) Forming method of optical waveguide
JPH0724591A (en) Shutter for laser beam