JPS58190064A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS58190064A
JPS58190064A JP57071232A JP7123282A JPS58190064A JP S58190064 A JPS58190064 A JP S58190064A JP 57071232 A JP57071232 A JP 57071232A JP 7123282 A JP7123282 A JP 7123282A JP S58190064 A JPS58190064 A JP S58190064A
Authority
JP
Japan
Prior art keywords
layer
junction
capacity
source
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57071232A
Inventor
Hideo Nakamura
Terumi Sawase
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57071232A priority Critical patent/JPS58190064A/en
Publication of JPS58190064A publication Critical patent/JPS58190064A/en
Application status is Granted legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To prevent the light incidence into the region of diffused layers and thus contrive to improve the leakage characteristic of P-N junction, by forming Al over the diffused layers of a MOSFET. CONSTITUTION:In the MOSFET consisting of a source diffused layer 8, a gate 9, and a source diffused layer 10, a light shielding Al 15 formed simultaneously with a wiring Al 11 is connected to fixed potentials such as a power source and arranged over the source diffused layer 10 contributed to store and retain charges. Since the light incident through a transparent package 14 reflects on the surface of the Al layer 15 after passing through a transparent protection film 19, the light incidence into the P-N junction constituted of the layer 10 and a substrate 16 is prevented, and accordingly the increase of leakage current at the junction of 10-16 is prevented. Further, the capacity of the diffused layer 10 is increased in total capacity to store and retain because of the additiin of the capacity for the Al 15.
JP57071232A 1982-04-30 1982-04-30 Semiconductor integrated circuit Granted JPS58190064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57071232A JPS58190064A (en) 1982-04-30 1982-04-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57071232A JPS58190064A (en) 1982-04-30 1982-04-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS58190064A true JPS58190064A (en) 1983-11-05

Family

ID=13454732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57071232A Granted JPS58190064A (en) 1982-04-30 1982-04-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS58190064A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764985A2 (en) 1995-09-22 1997-03-26 Hughes Aircraft Company Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5866933A (en) * 1992-07-31 1999-02-02 Hughes Electronics Corporation Integrated circuit security system and method with implanted interconnections
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants
US6667245B2 (en) 1999-11-10 2003-12-23 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6740942B2 (en) 2001-06-15 2004-05-25 Hrl Laboratories, Llc. Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
US6791191B2 (en) 2001-01-24 2004-09-14 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294816B1 (en) 1992-07-31 2001-09-25 Hughes Electronics Corporation Secure integrated circuit
US6613661B1 (en) 1992-07-31 2003-09-02 Hughes Electronics Corporation Process for fabricating secure integrated circuit
US5866933A (en) * 1992-07-31 1999-02-02 Hughes Electronics Corporation Integrated circuit security system and method with implanted interconnections
US5930663A (en) * 1995-09-22 1999-07-27 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US6064110A (en) * 1995-09-22 2000-05-16 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
EP0764985A2 (en) 1995-09-22 1997-03-26 Hughes Aircraft Company Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5783846A (en) * 1995-09-22 1998-07-21 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants
US6667245B2 (en) 1999-11-10 2003-12-23 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6791191B2 (en) 2001-01-24 2004-09-14 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations
US6740942B2 (en) 2001-06-15 2004-05-25 Hrl Laboratories, Llc. Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact

Similar Documents

Publication Publication Date Title
JPS5495116A (en) Solid image pickup unit
JPS5624969A (en) Semiconductor integrated circuit element
EP0112646A3 (en) Photovoltaic device
JPS54111798A (en) Image sensor of charge transfer type
JPS5772370A (en) Photoelectric converter
JPS62143476A (en) Semiconductor storage device
JPH0291980A (en) Solid-state light emitting element
US3020412A (en) Semiconductor photocells
JPS5245296A (en) Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS51114886A (en) Photocoupling semiconductor device and its manufacturing process
JPH0251282A (en) Photoelectric conversion device
JPS63287077A (en) Photoelectric conversion device
JPH0287577A (en) Floating gate type nonvolatile semiconductor storage device
JPH02135786A (en) Solar battery cell
JPH01209768A (en) Organic solar cell
JPS6281057A (en) Transparent conductive film
JPS55156358A (en) Semiconductor memory device
GB1488033A (en) Photosensitive junction devices
JPS542679A (en) Nonvoltile semiconductor memory device
JPH03156980A (en) Photodetector
JPS6034076A (en) Amorphous silicon solar cell
JPH04372177A (en) Photovoltaic device
JPS5483386A (en) Semiconductor device
JPS6065565A (en) Solid-state image sensor
JPH03180074A (en) Semiconductor device