JPS58182873A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS58182873A
JPS58182873A JP6660082A JP6660082A JPS58182873A JP S58182873 A JPS58182873 A JP S58182873A JP 6660082 A JP6660082 A JP 6660082A JP 6660082 A JP6660082 A JP 6660082A JP S58182873 A JPS58182873 A JP S58182873A
Authority
JP
Japan
Prior art keywords
film
formed
melting point
high melting
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6660082A
Inventor
Kenji Taniguchi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6660082A priority Critical patent/JPS58182873A/en
Publication of JPS58182873A publication Critical patent/JPS58182873A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon

Abstract

PURPOSE:To eliminate an abnormal etching phenomenon under high melting point metal by ion implanting atom of larger weight to a conductive film made of a high melting point metal material, thereby preventing mobile ions from entering the oxidized film. CONSTITUTION:A P<+> type layer 5 (an inversion preventive layer), an SiO2 film (field oxidized film) 6, an SiO2 film (gate oxidized film) 7 are formed on a P type silicon substrate 1, and a molybdenum film 8 to become a high melting point metal gate electrode is deposited. Tungsten ions are implanted, the surface is formed in amorphous state, thereby forming an amorphous film 9. Then, a gate electrode is formed by patterning, phosphorus is diffused to form source and drain regions 10a, 10b made of N<+> type layer. An SiO2 film 11 is accumulated, contacting hole is opened, a molybdenum film 12 is deposited, an amorphous film 13 is similarly formed on the surface. Thereafter, the films 12, 13 are patterned, to form a wiring layer, thereby obtaining an MOS transistor.
JP6660082A 1982-04-21 1982-04-21 Manufacture of semiconductor device Pending JPS58182873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6660082A JPS58182873A (en) 1982-04-21 1982-04-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6660082A JPS58182873A (en) 1982-04-21 1982-04-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS58182873A true JPS58182873A (en) 1983-10-25

Family

ID=13320570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6660082A Pending JPS58182873A (en) 1982-04-21 1982-04-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS58182873A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079742A (en) * 1983-10-05 1985-05-07 Nec Corp Integrated circuit
JPS60249320A (en) * 1984-05-25 1985-12-10 Hitachi Ltd Electrode wiring
JPS63169743A (en) * 1987-01-07 1988-07-13 Sharp Corp Manufacture of semiconductor device
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
WO1995017012A1 (en) * 1993-12-17 1995-06-22 National Semiconductor Corporation Refractory metal contact for a power device
JPH08241895A (en) * 1995-03-03 1996-09-17 Nec Corp Semiconductor device and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079742A (en) * 1983-10-05 1985-05-07 Nec Corp Integrated circuit
JPS60249320A (en) * 1984-05-25 1985-12-10 Hitachi Ltd Electrode wiring
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JPS63169743A (en) * 1987-01-07 1988-07-13 Sharp Corp Manufacture of semiconductor device
JPH0571169B2 (en) * 1987-01-07 1993-10-06 Sharp Kk
WO1995017012A1 (en) * 1993-12-17 1995-06-22 National Semiconductor Corporation Refractory metal contact for a power device
JPH08241895A (en) * 1995-03-03 1996-09-17 Nec Corp Semiconductor device and manufacture thereof

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