JPS58158975A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS58158975A
JPS58158975A JP58029638A JP2963883A JPS58158975A JP S58158975 A JPS58158975 A JP S58158975A JP 58029638 A JP58029638 A JP 58029638A JP 2963883 A JP2963883 A JP 2963883A JP S58158975 A JPS58158975 A JP S58158975A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
channel region
transistor according
further characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58029638A
Other languages
English (en)
Japanese (ja)
Inventor
アルフレツド・イ−・チヨ−
ポ−ル・オ−コナ−
ト−マス・ペリン・ピア−サル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS58158975A publication Critical patent/JPS58158975A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58029638A 1982-02-26 1983-02-25 電界効果トランジスタ Pending JPS58158975A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35251882A 1982-02-26 1982-02-26
US352518 1989-05-15

Publications (1)

Publication Number Publication Date
JPS58158975A true JPS58158975A (ja) 1983-09-21

Family

ID=23385455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58029638A Pending JPS58158975A (ja) 1982-02-26 1983-02-25 電界効果トランジスタ

Country Status (3)

Country Link
JP (1) JPS58158975A (enrdf_load_stackoverflow)
CA (1) CA1196111A (enrdf_load_stackoverflow)
FR (1) FR2522442A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012508973A (ja) * 2008-11-13 2012-04-12 エプコス アクチエンゲゼルシャフト Ｐ型電界効果トランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012508973A (ja) * 2008-11-13 2012-04-12 エプコス アクチエンゲゼルシャフト Ｐ型電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
CA1196111A (en) 1985-10-29
FR2522442A1 (fr) 1983-09-02
FR2522442B1 (enrdf_load_stackoverflow) 1984-12-28

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