JPS5815227A - Laser annealing - Google Patents

Laser annealing

Info

Publication number
JPS5815227A
JPS5815227A JP11335081A JP11335081A JPS5815227A JP S5815227 A JPS5815227 A JP S5815227A JP 11335081 A JP11335081 A JP 11335081A JP 11335081 A JP11335081 A JP 11335081A JP S5815227 A JPS5815227 A JP S5815227A
Authority
JP
Japan
Prior art keywords
approx
silicon film
10mum
orientation
gt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11335081A
Inventor
Koji Egami
Masakazu Kimura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP11335081A priority Critical patent/JPS5815227A/en
Publication of JPS5815227A publication Critical patent/JPS5815227A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

PURPOSE:To obtain a single crystal silicon grain having a <100> orientation and a size of approx. 10mum on an amorphous dielectric film-covered glass in the continuous oscillation laser annealing of an amorphous or polycrystal silicon film by using an inert gas atmosphere containg a small amount of oxygen. CONSTITUTION:As an amorphous dielectric substrate a mirror-polished silica glass with a thickness of approx. 400mum is employed, on which a polycrystal silicon film is accumulated to a thickness of approx 0.8mum by means of the decompression CVD method. This silicon film is first dissolved by using continuous oscillation laser beams of Nd: YAG and Ar, then re-crystallized. Using an atmosphere with an oxygen content of 2% or more makes obtainable a silicon film of a single crystal grain having a <100> orientation with its axis vertical to the substrate surface and a size of 10mum approx.
JP11335081A 1981-07-20 1981-07-20 Laser annealing Pending JPS5815227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11335081A JPS5815227A (en) 1981-07-20 1981-07-20 Laser annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11335081A JPS5815227A (en) 1981-07-20 1981-07-20 Laser annealing

Publications (1)

Publication Number Publication Date
JPS5815227A true JPS5815227A (en) 1983-01-28

Family

ID=14610026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11335081A Pending JPS5815227A (en) 1981-07-20 1981-07-20 Laser annealing

Country Status (1)

Country Link
JP (1) JPS5815227A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329269B1 (en) * 1995-03-27 2001-12-11 Sanyo Electric Co., Ltd. Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen
US6348369B1 (en) 1995-10-25 2002-02-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor devices
US7087504B2 (en) 2001-05-18 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by irradiating with a laser beam

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329269B1 (en) * 1995-03-27 2001-12-11 Sanyo Electric Co., Ltd. Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen
US6348369B1 (en) 1995-10-25 2002-02-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor devices
US7041580B2 (en) 1995-10-25 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
US7528057B2 (en) 1995-10-25 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
US7087504B2 (en) 2001-05-18 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by irradiating with a laser beam
US7217952B2 (en) 2001-05-18 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus

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