JPS58147887A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS58147887A
JPS58147887A JP57032008A JP3200882A JPS58147887A JP S58147887 A JPS58147887 A JP S58147887A JP 57032008 A JP57032008 A JP 57032008A JP 3200882 A JP3200882 A JP 3200882A JP S58147887 A JPS58147887 A JP S58147887A
Authority
JP
Japan
Prior art keywords
transistor
drain
memory device
semiconductor memory
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57032008A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315351B2 (forum.php
Inventor
Takao Nakano
隆生 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57032008A priority Critical patent/JPS58147887A/ja
Publication of JPS58147887A publication Critical patent/JPS58147887A/ja
Publication of JPH0315351B2 publication Critical patent/JPH0315351B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57032008A 1982-02-26 1982-02-26 半導体記憶装置 Granted JPS58147887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57032008A JPS58147887A (ja) 1982-02-26 1982-02-26 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57032008A JPS58147887A (ja) 1982-02-26 1982-02-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58147887A true JPS58147887A (ja) 1983-09-02
JPH0315351B2 JPH0315351B2 (forum.php) 1991-02-28

Family

ID=12346840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57032008A Granted JPS58147887A (ja) 1982-02-26 1982-02-26 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS58147887A (forum.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136095A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体メモリ
JPH05151779A (ja) * 1990-06-29 1993-06-18 Digital Equip Corp <Dec> バイポーラトランジスタメモリセル及び方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101402381B1 (ko) * 2013-04-11 2014-06-03 한국가스공사 Lng 탱크 컨테이너를 이용한 원격지 천연가스 공급 스테이션 및 이를 이용한 천연가스 공급 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136095A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体メモリ
JPH05151779A (ja) * 1990-06-29 1993-06-18 Digital Equip Corp <Dec> バイポーラトランジスタメモリセル及び方法

Also Published As

Publication number Publication date
JPH0315351B2 (forum.php) 1991-02-28

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