JPS58139425A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS58139425A
JPS58139425A JP2154282A JP2154282A JPS58139425A JP S58139425 A JPS58139425 A JP S58139425A JP 2154282 A JP2154282 A JP 2154282A JP 2154282 A JP2154282 A JP 2154282A JP S58139425 A JPS58139425 A JP S58139425A
Authority
JP
Japan
Prior art keywords
mask
film
metallic
resist mask
utilizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2154282A
Other languages
Japanese (ja)
Inventor
Kuniyasu Asada
Original Assignee
Nec Home Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Home Electronics Ltd filed Critical Nec Home Electronics Ltd
Priority to JP2154282A priority Critical patent/JPS58139425A/en
Publication of JPS58139425A publication Critical patent/JPS58139425A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Abstract

PURPOSE:To improve the reliability of metallic layer by a method wherein an SiO2 film on Si substrate is provided with openings utilizing resist mask for metallic evaporation and after lifting off the film together with the mask, the metallic film is evaporated for patterning. CONSTITUTION:The SiO2 or Si substrate 1 with impurity layer is opened 2a utilizing resist mask 3 to evaporate Al 8 which is lift off later. Al 9 is evaporated on the residual Al 8' to make the surface flat and the Al 9 is etched utilizing a resist mask 10 larger than the openings 2a and the mask 10 is removed. Through this constitution, the flat electrode 9' without any thin part may be produced causing no defect such as wiring disconnection.
JP2154282A 1982-02-13 1982-02-13 Manufacture of semiconductor device Pending JPS58139425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2154282A JPS58139425A (en) 1982-02-13 1982-02-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2154282A JPS58139425A (en) 1982-02-13 1982-02-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS58139425A true JPS58139425A (en) 1983-08-18

Family

ID=12057861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2154282A Pending JPS58139425A (en) 1982-02-13 1982-02-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS58139425A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113478A (en) * 1975-03-28 1976-10-06 Fujitsu Ltd The manufacturing method of semiconductor device
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113478A (en) * 1975-03-28 1976-10-06 Fujitsu Ltd The manufacturing method of semiconductor device
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device

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