JPS58137254A - Insulated gate semiconductor device - Google Patents

Insulated gate semiconductor device

Info

Publication number
JPS58137254A
JPS58137254A JP57018746A JP1874682A JPS58137254A JP S58137254 A JPS58137254 A JP S58137254A JP 57018746 A JP57018746 A JP 57018746A JP 1874682 A JP1874682 A JP 1874682A JP S58137254 A JPS58137254 A JP S58137254A
Authority
JP
Japan
Prior art keywords
lt
gt
type wells
concentration
deep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57018746A
Inventor
Kazutoshi Ashikawa
Tetsuo Iijima
Mitsuo Ito
Hideaki Kato
Takeaki Okabe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57018746A priority Critical patent/JPS58137254A/en
Publication of JPS58137254A publication Critical patent/JPS58137254A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs

Abstract

PURPOSE:To improve disruptive strength in case of latching of L load by forming a deep P<+> type well having high concentration by one part except the channel section of the P type well of a vertical MOSFET. CONSTITUTION:The deep P<+> type wells 7 having high concentration are formed by one parts except the channel sections of the P type wells 3 of the vertical MOSFET. Surface concentration shall be at least 1X10<17>atoms/cm<3> or more in the concentration of the P<+> type wells 7. Accordingly, the device does not function as a parasitic bipolar transistor by short-circuiting the base and emitter of a bipolar NPN transistor and lowering base resistance, and breakdown voltage BVDSS is increased, thus improving the dielectric resistance of the L load.
JP57018746A 1982-02-10 1982-02-10 Insulated gate semiconductor device Pending JPS58137254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018746A JPS58137254A (en) 1982-02-10 1982-02-10 Insulated gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018746A JPS58137254A (en) 1982-02-10 1982-02-10 Insulated gate semiconductor device

Publications (1)

Publication Number Publication Date
JPS58137254A true JPS58137254A (en) 1983-08-15

Family

ID=11980214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018746A Pending JPS58137254A (en) 1982-02-10 1982-02-10 Insulated gate semiconductor device

Country Status (1)

Country Link
JP (1) JPS58137254A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046656U (en) * 1983-09-06 1985-04-02
JPS6184864A (en) * 1984-09-28 1986-04-30 Gen Electric Insulation gate semiconductor element having base-source electrode short-circuit section and formation of short-circuit section
JPS63224260A (en) * 1987-03-12 1988-09-19 Nippon Denso Co Ltd Conductivity modulation type mosfet
JPH01144683A (en) * 1987-11-30 1989-06-06 Fuji Electric Co Ltd Insulated-gate field-effect transistor
JPH01185976A (en) * 1988-01-20 1989-07-25 Mitsubishi Electric Corp Power mos-fet
JPH0354868A (en) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Mos type semiconductor device
US6060731A (en) * 1997-07-28 2000-05-09 Kabushiki Kaisha Toyota Chuo Kenkyusho Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046656U (en) * 1983-09-06 1985-04-02
JPH0458709B2 (en) * 1984-09-28 1992-09-18 Gen Electric
JPS6184864A (en) * 1984-09-28 1986-04-30 Gen Electric Insulation gate semiconductor element having base-source electrode short-circuit section and formation of short-circuit section
JPS63224260A (en) * 1987-03-12 1988-09-19 Nippon Denso Co Ltd Conductivity modulation type mosfet
JPH01144683A (en) * 1987-11-30 1989-06-06 Fuji Electric Co Ltd Insulated-gate field-effect transistor
JPH01185976A (en) * 1988-01-20 1989-07-25 Mitsubishi Electric Corp Power mos-fet
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH0354868A (en) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Mos type semiconductor device
US6060731A (en) * 1997-07-28 2000-05-09 Kabushiki Kaisha Toyota Chuo Kenkyusho Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6710406B2 (en) 1997-11-14 2004-03-23 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6828195B2 (en) 1997-11-14 2004-12-07 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region
US7696571B2 (en) 1997-11-14 2010-04-13 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region
US8044463B2 (en) 1997-11-14 2011-10-25 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region

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