JPS58118154A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS58118154A
JPS58118154A JP116382A JP116382A JPS58118154A JP S58118154 A JPS58118154 A JP S58118154A JP 116382 A JP116382 A JP 116382A JP 116382 A JP116382 A JP 116382A JP S58118154 A JPS58118154 A JP S58118154A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
si
substrate
sio2
si3n4
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP116382A
Inventor
Matsuo Ichikawa
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To prevent an impurity diffusion from an insulation substrate, by super posing an Si or an amorphous Si via vapor grown SiO2 or Si3N4 or the both on the insulation substrate. CONSTITUTION:Between the substrate 21 of glass, ceramic, etc. and an N type poly Si layer 22, the vapor grown SiO2 film 30 is formed 200-3,000Angstrom approx. As well as SiO2, Si3N4 or a laminated film of the both can be used. In this constitution, by a heat treatment performed in a later process, the impurity diffusion, from the substrate 21 into the poly Si (or amorphous Si) layer 22, is prevented, and thus the leak based thereon between P source drain 23 is not generated resulting in the improvement of the yield.
JP116382A 1982-01-07 1982-01-07 Semiconductor ic device Pending JPS58118154A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP116382A JPS58118154A (en) 1982-01-07 1982-01-07 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP116382A JPS58118154A (en) 1982-01-07 1982-01-07 Semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS58118154A true true JPS58118154A (en) 1983-07-14

Family

ID=11493767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP116382A Pending JPS58118154A (en) 1982-01-07 1982-01-07 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS58118154A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134470A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Semiconductor device
JPH05235357A (en) * 1992-02-25 1993-09-10 Semiconductor Energy Lab Co Ltd Insulated-gate thin-film semiconductor device and manufacture thereof
JPH07273348A (en) * 1994-09-27 1995-10-20 Seiko Epson Corp Complementary thin film transistor circuit
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6259120B1 (en) 1993-10-01 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US6489632B1 (en) * 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2009027200A (en) * 1992-04-06 2009-02-05 Semiconductor Energy Lab Co Ltd Insulated gate-type semiconductor device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
JPS57122575A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Manufacture of thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
JPS57122575A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Manufacture of thin film transistor

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134470A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Semiconductor device
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
JPH05235357A (en) * 1992-02-25 1993-09-10 Semiconductor Energy Lab Co Ltd Insulated-gate thin-film semiconductor device and manufacture thereof
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP4503671B2 (en) * 1992-04-06 2010-07-14 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP2009027200A (en) * 1992-04-06 2009-02-05 Semiconductor Energy Lab Co Ltd Insulated gate-type semiconductor device and method of manufacturing the same
US7408233B2 (en) 1993-01-18 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region
US6489632B1 (en) * 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6995432B2 (en) 1993-01-18 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions
US6867431B2 (en) 1993-09-20 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7166503B2 (en) 1993-10-01 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with laser irradiation
US6259120B1 (en) 1993-10-01 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JPH07273348A (en) * 1994-09-27 1995-10-20 Seiko Epson Corp Complementary thin film transistor circuit

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