JPS58115100A - 無機化合物単結晶の製造方法 - Google Patents

無機化合物単結晶の製造方法

Info

Publication number
JPS58115100A
JPS58115100A JP21269281A JP21269281A JPS58115100A JP S58115100 A JPS58115100 A JP S58115100A JP 21269281 A JP21269281 A JP 21269281A JP 21269281 A JP21269281 A JP 21269281A JP S58115100 A JPS58115100 A JP S58115100A
Authority
JP
Japan
Prior art keywords
boat
single crystal
growth
wafer
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21269281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329759B2 (enrdf_load_stackoverflow
Inventor
Fumio Orito
文夫 折戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP21269281A priority Critical patent/JPS58115100A/ja
Publication of JPS58115100A publication Critical patent/JPS58115100A/ja
Publication of JPH0329759B2 publication Critical patent/JPH0329759B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21269281A 1981-12-28 1981-12-28 無機化合物単結晶の製造方法 Granted JPS58115100A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21269281A JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21269281A JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58115100A true JPS58115100A (ja) 1983-07-08
JPH0329759B2 JPH0329759B2 (enrdf_load_stackoverflow) 1991-04-25

Family

ID=16626842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21269281A Granted JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58115100A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5334457A (en) * 1976-09-13 1978-03-31 Toshiba Corp Manufacture for face plate
JPS54141388A (en) * 1978-04-25 1979-11-02 Hitachi Cable Ltd Production of compound semiconductor single crystal
JPS57129899A (en) * 1981-01-30 1982-08-12 Hitachi Cable Ltd Manufacture of single crystal of 3-5 group compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5334457A (en) * 1976-09-13 1978-03-31 Toshiba Corp Manufacture for face plate
JPS54141388A (en) * 1978-04-25 1979-11-02 Hitachi Cable Ltd Production of compound semiconductor single crystal
JPS57129899A (en) * 1981-01-30 1982-08-12 Hitachi Cable Ltd Manufacture of single crystal of 3-5 group compound semiconductor

Also Published As

Publication number Publication date
JPH0329759B2 (enrdf_load_stackoverflow) 1991-04-25

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