JPS5811075B2 - electronic microscope - Google Patents

electronic microscope

Info

Publication number
JPS5811075B2
JPS5811075B2 JP52145924A JP14592477A JPS5811075B2 JP S5811075 B2 JPS5811075 B2 JP S5811075B2 JP 52145924 A JP52145924 A JP 52145924A JP 14592477 A JP14592477 A JP 14592477A JP S5811075 B2 JPS5811075 B2 JP S5811075B2
Authority
JP
Japan
Prior art keywords
sample
objective lens
magnetic pole
electron microscope
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52145924A
Other languages
Japanese (ja)
Other versions
JPS5478655A (en
Inventor
桜井滋賢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP52145924A priority Critical patent/JPS5811075B2/en
Publication of JPS5478655A publication Critical patent/JPS5478655A/en
Publication of JPS5811075B2 publication Critical patent/JPS5811075B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は走査像観察装置が付属した電子顕微鏡に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron microscope equipped with a scanning image observation device.

従来電子顕微鏡でありながら走査電子顕微鏡としての機
能を備えた装置が実現されている。
A device that is a conventional electron microscope but has the function of a scanning electron microscope has been realized.

斯かる装置では試料は通常の電子顕微鏡と同様に対物レ
ンズの中心に配置され、走査像を観察する場合には対物
レンズを強励磁となし、試料前方に形成される前方磁界
を1つの2次電子集束手段として利用し、対物レンズ上
部に設けた偏向手段を利用して試料上で電子線を2次元
走査するようにしている。
In such an apparatus, the sample is placed at the center of the objective lens, similar to a normal electron microscope, and when observing a scanned image, the objective lens is strongly excited, and the forward magnetic field formed in front of the sample is converted into a secondary magnetic field. It is used as an electron focusing means, and a deflection means provided above the objective lens is used to two-dimensionally scan the electron beam on the sample.

ところが斯かる装置では対物レンズが強励磁の場合問題
ないがOFF又は弱励磁で使用する場合試料から発生し
た2次電子を検出する検出器は対物レンズ上方の電子線
通路近傍に設けられるため、試料と検出器の距離がどう
しても長大化してしまい、2次電子の検出効率の低下は
避けられなかった。
However, in such a device, there is no problem when the objective lens is strongly excited, but when it is used with OFF or weak excitation, the detector for detecting the secondary electrons generated from the sample is installed above the objective lens and near the electron beam path. As a result, the distance between the detector and the detector inevitably became longer, and a decrease in the detection efficiency of secondary electrons was unavoidable.

そのため特に高速走査の際に1画素当りの信号量が不足
し、像質を損なう結果となっていた。
Therefore, especially during high-speed scanning, the amount of signal per pixel is insufficient, resulting in a loss of image quality.

本発明者は上述した従来の問題点を解決すべく種々の検
討及び実験を繰返した結果、試料の周囲及びその上部の
電子線通路を取り囲む筒体(例えば汚染防止筒)を設け
、該筒体に試料に対して正の電位を与えると2次電子検
出効率を高め得ることを発見した。
As a result of repeated studies and experiments in order to solve the above-mentioned conventional problems, the present inventor provided a cylindrical body (for example, a contamination prevention tube) surrounding the electron beam passage around and above the sample, and the cylindrical body We discovered that applying a positive potential to the sample can improve the secondary electron detection efficiency.

第1図はこの発見に基づく本発明の一実施例を示す断面
図であり、以下詳説する。
FIG. 1 is a sectional view showing an embodiment of the present invention based on this discovery, and will be explained in detail below.

第1図において1,2は対物レンズを構成する夫々上磁
極片及び下磁極片である。
In FIG. 1, numerals 1 and 2 are an upper magnetic pole piece and a lower magnetic pole piece, respectively, which constitute an objective lens.

3は被観察試料であり、上磁極片1の上方又は横方向か
ら挿入され1通常は上、下磁極片1,2によって作られ
る磁界中に置かれている。
Reference numeral 3 denotes a sample to be observed, which is inserted from above or from the side of the upper magnetic pole piece 1 and placed in a magnetic field created by the upper and lower magnetic pole pieces 1 and 2, respectively.

4は試料3に照射される微小径の電子線EBを走査する
ために対物レンズ上方に設けられた偏向コイルである。
Reference numeral 4 denotes a deflection coil provided above the objective lens for scanning the micro-diameter electron beam EB irradiated onto the sample 3.

該偏向コイル4の上方にはシンチレータ、光電子増倍管
、収集電極等より成る2次電子検出器5が電子線通路に
向けて設けられている。
A secondary electron detector 5 consisting of a scintillator, a photomultiplier tube, a collection electrode, etc. is provided above the deflection coil 4 and faces toward the electron beam path.

そして試料3上の電子線照射点より発生した2次電子は
対物レンズの前方磁界により電子線通路付近に集められ
ると共に該通路を中心として螺旋運動しながら2次電子
検出器5に収集され、検出される。
The secondary electrons generated from the electron beam irradiation point on the sample 3 are collected near the electron beam path by the forward magnetic field of the objective lens, and are collected by the secondary electron detector 5 while moving spirally around the path, where they are detected. be done.

6は試料を取り囲むように配置された汚染防止筒であり
、該汚染防止筒6は断熱兼絶縁材7を介して前記上磁極
片1によって断熱且つ絶縁的に保持されている。
Reference numeral 6 denotes a contamination prevention tube arranged to surround the sample, and the contamination prevention tube 6 is held in a heat-insulated manner by the upper magnetic pole piece 1 via a heat-insulating material 7.

上記汚染防止筒6は図示しない冷却機構によって低温に
保たれており、試料付近に存在する有機ガス等をトラッ
プし、試料の汚染を防止する。
The contamination prevention cylinder 6 is kept at a low temperature by a cooling mechanism (not shown), and traps organic gas and the like present near the sample to prevent contamination of the sample.

又上記汚染防止筒6は直流電源8によって試料3に対し
て10V程度の正電位に保たれている。
Further, the contamination prevention tube 6 is maintained at a positive potential of about 10 V with respect to the sample 3 by a DC power source 8.

上述の如き構成において走査像を観察する場合。When observing a scanned image in the configuration as described above.

細く絞られた電子線を偏向コイル4により試料3上で2
次元的に走査するのは先に述べた通りである。
A finely focused electron beam is deflected onto the sample 3 by the deflection coil 4.
Dimensionally scanning is as described above.

該2次元走査により試料3の表面から発生した2次電子
は試料と汚染防止筒6との間に形成された電界による静
電レンズ作用により集束作用を受け、効率良く対物レン
ズ上方へ導き出され、更に2次電子検出器5から電子線
通路に向けられている2次電子収集用の電界に引かれて
検出器5へ導かれて検出される。
Secondary electrons generated from the surface of the sample 3 due to the two-dimensional scanning are focused by an electrostatic lens effect caused by an electric field formed between the sample and the contamination prevention cylinder 6, and are efficiently guided above the objective lens. Further, the secondary electrons are attracted by the electric field for collecting secondary electrons directed toward the electron beam path from the secondary electron detector 5, and are guided to the detector 5 and detected.

第2図は汚染防止筒6に与える電位Vsに応じた2次電
子検出効率の変化の測定例を示す。
FIG. 2 shows an example of measuring the change in secondary electron detection efficiency according to the potential Vs applied to the pollution prevention cylinder 6.

同図かられかるように従来(Vs=Ovの場合)に比べ
Vs=20V程度までの正の電位の範囲で検出効率が向
上していることが認められる。
As can be seen from the figure, it is recognized that the detection efficiency is improved in the positive potential range up to about Vs=20V compared to the conventional case (when Vs=Ov).

従って2次電子検出器5より得られた検出信号を表示装
置に供給すれば高速走査時でもSN比の良好な画像を得
ることができる。
Therefore, if the detection signal obtained from the secondary electron detector 5 is supplied to the display device, an image with a good signal-to-noise ratio can be obtained even during high-speed scanning.

尚第2図においてVs=20Vを超えると検出効率が低
下するのは試料と汚染防止筒下端部との間に電界が集中
してしまうためではないかと推測される。
It is assumed that the reason why the detection efficiency decreases when Vs exceeds 20 V in FIG. 2 is because the electric field is concentrated between the sample and the lower end of the contamination prevention tube.

従って汚染防止筒内側面に設けられるひだ6aの位置、
大きさを適宜なものとするなどして汚染防止筒下端部と
試料との間だけに電界が集中せずに、試料上方にも電界
が分布するようにすれば更に高い電位まで検出効率を高
めることができる。
Therefore, the position of the fold 6a provided on the inner surface of the pollution prevention cylinder,
If the electric field is not concentrated only between the lower end of the contamination prevention tube and the sample, but is distributed above the sample by making the size appropriate, detection efficiency can be increased to even higher potentials. be able to.

尚上述した実施例では汚染防止筒に正電位を与えたが、
これに限らず別個に筒体を設けても良いことは言うまで
もない。
In the above-mentioned embodiment, a positive potential was applied to the contamination prevention tube, but
Needless to say, the present invention is not limited to this, and a separate cylindrical body may be provided.

以上詳述した如く本発明によれば2次電子検出効率を高
めることができ、特に汚染防止筒に正電位を与えるよう
にすれば構成も極めて簡単となる等の効果を有する。
As detailed above, according to the present invention, the secondary electron detection efficiency can be improved, and in particular, if a positive potential is applied to the contamination prevention tube, the configuration can be extremely simplified.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す断面図であり、第2図
は汚染防止筒に与える電位と検出効率との関係を示す図
である。 1:上磁極片、2:下磁極片、3:試料、5:2次電子
検出器、6:汚染防止筒、7:断熱兼絶縁材、8:直流
電源。
FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the potential applied to the pollution prevention cylinder and the detection efficiency. 1: Upper magnetic pole piece, 2: Lower magnetic pole piece, 3: Sample, 5: Secondary electron detector, 6: Contamination prevention cylinder, 7: Heat and insulation material, 8: DC power supply.

Claims (1)

【特許請求の範囲】 1 対物レンズ上磁極と下磁極との間に試料を配置し、
該試料上で電子線を2次元的に走査し、試料より発生し
た2次電子を前記対物レンズ上方に配置した検出器に導
いて検出するようにした電子顕微鏡において、前記試料
及びその上方の電子線通路周囲を囲む筒状電極を設け、
該筒状電極に試料に対して正の電位を与えるように構成
したことを特徴とする電子顕微鏡。 2 前記筒状電極として試料周囲に設けられる汚染防止
筒を兼用する特許請求の範囲第1項記載の電子顕微鏡。
[Claims] 1. A sample is placed between the upper magnetic pole and the lower magnetic pole of the objective lens,
In an electron microscope in which an electron beam is two-dimensionally scanned over the sample and secondary electrons generated from the sample are guided to a detector placed above the objective lens and detected, the sample and the electrons above it are detected. A cylindrical electrode surrounding the wire passage is provided,
An electron microscope characterized in that the cylindrical electrode is configured to apply a positive potential to a sample. 2. The electron microscope according to claim 1, wherein the cylindrical electrode also serves as a contamination prevention tube provided around the sample.
JP52145924A 1977-12-05 1977-12-05 electronic microscope Expired JPS5811075B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52145924A JPS5811075B2 (en) 1977-12-05 1977-12-05 electronic microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52145924A JPS5811075B2 (en) 1977-12-05 1977-12-05 electronic microscope

Publications (2)

Publication Number Publication Date
JPS5478655A JPS5478655A (en) 1979-06-22
JPS5811075B2 true JPS5811075B2 (en) 1983-03-01

Family

ID=15396219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52145924A Expired JPS5811075B2 (en) 1977-12-05 1977-12-05 electronic microscope

Country Status (1)

Country Link
JP (1) JPS5811075B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134282U (en) * 1989-04-14 1990-11-07

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917906A (en) * 1972-06-06 1974-02-16
JPS5132173A (en) * 1974-09-12 1976-03-18 Nippon Electron Optics Lab SOSADENSHIKENBIKYO
JPS5141545A (en) * 1974-08-07 1976-04-07 Rank Organisation Ltd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917906A (en) * 1972-06-06 1974-02-16
JPS5141545A (en) * 1974-08-07 1976-04-07 Rank Organisation Ltd
JPS5132173A (en) * 1974-09-12 1976-03-18 Nippon Electron Optics Lab SOSADENSHIKENBIKYO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134282U (en) * 1989-04-14 1990-11-07

Also Published As

Publication number Publication date
JPS5478655A (en) 1979-06-22

Similar Documents

Publication Publication Date Title
US4897545A (en) Electron detector for use in a gaseous environment
US5945672A (en) Gaseous backscattered electron detector for an environmental scanning electron microscope
JP4176159B2 (en) Environmentally controlled SEM using magnetic field for improved secondary electron detection
EP0113746A1 (en) An elektrode system of a retarding-field spectrometer for a voltage measuring electron beam apparatus.
US6815678B2 (en) Raster electron microscope
JP2002042713A (en) Scanning electron microscope provided with detection part in objective lens
JPH0935679A (en) Scanning electron microscope
JPS5811075B2 (en) electronic microscope
JPH08138611A (en) Charged particle beam device
JP2004259469A (en) Scanning electron microscope
JP2002324510A (en) Scanning electron microscope
JP3261792B2 (en) Scanning electron microscope
JP4146103B2 (en) Electron beam apparatus equipped with a field emission electron gun
JPH0236208Y2 (en)
JPH0319166Y2 (en)
JPH076609Y2 (en) Focused ion beam processing equipment
JP3965691B2 (en) Scanning electron microscope
JP4045058B2 (en) Multiple charged particle detector and scanning transmission electron microscope using the same
JPH0228609Y2 (en)
JPS6237326Y2 (en)
JP3101141B2 (en) Electron beam equipment
JPH057820B2 (en)
JPS5854783Y2 (en) scanning electron microscope
JPH0546660B2 (en)
JPH08321275A (en) Secondary charged particle sensing device