JPS58103154A - 多結晶シリコン層間絶縁膜形成方法 - Google Patents
多結晶シリコン層間絶縁膜形成方法Info
- Publication number
- JPS58103154A JPS58103154A JP56202892A JP20289281A JPS58103154A JP S58103154 A JPS58103154 A JP S58103154A JP 56202892 A JP56202892 A JP 56202892A JP 20289281 A JP20289281 A JP 20289281A JP S58103154 A JPS58103154 A JP S58103154A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- insulating film
- thickness
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202892A JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202892A JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58103154A true JPS58103154A (ja) | 1983-06-20 |
| JPS6248379B2 JPS6248379B2 (enrdf_load_stackoverflow) | 1987-10-13 |
Family
ID=16464923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56202892A Granted JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58103154A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-15 JP JP56202892A patent/JPS58103154A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248379B2 (enrdf_load_stackoverflow) | 1987-10-13 |
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