JPS58103149A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS58103149A
JPS58103149A JP20287981A JP20287981A JPS58103149A JP S58103149 A JPS58103149 A JP S58103149A JP 20287981 A JP20287981 A JP 20287981A JP 20287981 A JP20287981 A JP 20287981A JP S58103149 A JPS58103149 A JP S58103149A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wirings
laminate
chips
etc
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20287981A
Inventor
Tomizo Terasawa
Shigeaki Tomonari
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06524Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06551Conductive connections on the side of the device

Abstract

PURPOSE:To enhance the degree of integration per occupying area and yield at manufacturing time of the semiconductor device by a method wherein wirings between elements of semiconductor circuit dispersed three-dimentionally, arranged laminatedly and divided into multilayers are provided at the side of the laminate. CONSTITUTION:Chips 1, 2 of two sheets are laminated as to make the respective semiconductor circuit formed face sides to face each other, and are fixed with a proper organic adhesive of epoxy resin, urethane resin, phenol resin, etc. The wirings 51, 52, 53 are arranged respectively between pads of three groups of fellow VDD's of the chips 1, 2, fellow VSS's of the chips 1, 2, and the OUT1 of the chip 1 and the IN2 of the chip 2, and the semiconductor integrated circuit 6 of MOS inverter two stage connection is formed in the laminate 4 by the wirings thereof. Pads 61, 62 consisting of aluminum, etc., and necessary for input/output, etc., to the semiconductor integrated circuit thereof are provided to the IN1 and the OUT2 on the pads exposing side face of the laminate 4.
JP20287981A 1981-12-15 1981-12-15 Semiconductor device Pending JPS58103149A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20287981A JPS58103149A (en) 1981-12-15 1981-12-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20287981A JPS58103149A (en) 1981-12-15 1981-12-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS58103149A true true JPS58103149A (en) 1983-06-20

Family

ID=16464708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20287981A Pending JPS58103149A (en) 1981-12-15 1981-12-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS58103149A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118164A (en) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp Semiconductor device
JPS61174661A (en) * 1985-01-29 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device and manufacture thereof
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
FR2666452A1 (en) * 1990-09-03 1992-03-06 Mitsubishi Electric Corp Multilayer semiconductor circuit module
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US5426566A (en) * 1991-09-30 1995-06-20 International Business Machines Corporation Multichip integrated circuit packages and systems
JPH0828465B2 (en) * 1984-11-23 1996-03-21 ア−ビン・センサ−ズ・コ−ポレ−ション Method of manufacturing a multilayer electronic circuit module
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
JP2017168868A (en) * 2015-01-16 2017-09-21 雫石 誠 Semiconductor element

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118164A (en) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp Semiconductor device
JPH0828465B2 (en) * 1984-11-23 1996-03-21 ア−ビン・センサ−ズ・コ−ポレ−ション Method of manufacturing a multilayer electronic circuit module
JPS61174661A (en) * 1985-01-29 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device and manufacture thereof
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
FR2666452A1 (en) * 1990-09-03 1992-03-06 Mitsubishi Electric Corp Multilayer semiconductor circuit module
US5426566A (en) * 1991-09-30 1995-06-20 International Business Machines Corporation Multichip integrated circuit packages and systems
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
JP2017168868A (en) * 2015-01-16 2017-09-21 雫石 誠 Semiconductor element

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