JPS5789257A - Manufacture of insulation gate type field effect transistor - Google Patents

Manufacture of insulation gate type field effect transistor

Info

Publication number
JPS5789257A
JPS5789257A JP55166084A JP16608480A JPS5789257A JP S5789257 A JPS5789257 A JP S5789257A JP 55166084 A JP55166084 A JP 55166084A JP 16608480 A JP16608480 A JP 16608480A JP S5789257 A JPS5789257 A JP S5789257A
Authority
JP
Japan
Prior art keywords
region
insulation film
thick
intended
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55166084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0126192B2 (enrdf_load_stackoverflow
Inventor
Tadayoshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55166084A priority Critical patent/JPS5789257A/ja
Publication of JPS5789257A publication Critical patent/JPS5789257A/ja
Publication of JPH0126192B2 publication Critical patent/JPH0126192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP55166084A 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor Granted JPS5789257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5789257A true JPS5789257A (en) 1982-06-03
JPH0126192B2 JPH0126192B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=15824681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166084A Granted JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5789257A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (ja) * 1983-09-20 1985-04-13 Seiko Epson Corp Ｍｏｓ型トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (ja) * 1983-09-20 1985-04-13 Seiko Epson Corp Ｍｏｓ型トランジスタ

Also Published As

Publication number Publication date
JPH0126192B2 (enrdf_load_stackoverflow) 1989-05-22

Similar Documents

Publication Publication Date Title
JPS5662356A (en) Logic integrated circuit device and its manufacturing method
JPS5578574A (en) Manufacture of insulated-gate field-effect transistor
JPS56124270A (en) Manufacture of semiconductor device
JPS5789257A (en) Manufacture of insulation gate type field effect transistor
JPS57107067A (en) Manufacture of semiconductor device
JPS5521102A (en) Semiconductor memory cell
JPS56126973A (en) Mos field effect transistor
JPS5789256A (en) Manufacture of insulation gate type field effect transistor
JPS5713769A (en) Semiconductor device and manufacture thereof
JPS6461060A (en) Semiconductor device
JPS56115570A (en) Manufacture of semiconductor device
JPS57141966A (en) Manufacture of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS56135971A (en) Manufacture of mos type semiconductor device
JPS6457673A (en) Manufacture of thin film transistor
JPS57207375A (en) Manufacture of semiconductor device
JPS5752167A (en) Insulated gate type field effect transistor and manufacture thereof
JPS57201080A (en) Semiconductor device
JPS54150090A (en) Manufacture of semiconductor device
JPS5678157A (en) Semiconductor device
JPS54104782A (en) Mos type semiconductor device
JPS54114982A (en) Manufacture for complementary isolation gate field effect semiconductor device
JPS55124269A (en) Field effect transistor and method of fabricating the same
JPS57106078A (en) Mos semiconductor device