JPS5771580A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5771580A JPS5771580A JP55147773A JP14777380A JPS5771580A JP S5771580 A JPS5771580 A JP S5771580A JP 55147773 A JP55147773 A JP 55147773A JP 14777380 A JP14777380 A JP 14777380A JP S5771580 A JPS5771580 A JP S5771580A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- varied
- capacitor
- vcc
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55147773A JPS5771580A (en) | 1980-10-22 | 1980-10-22 | Semiconductor memory device |
US06/313,616 US4458336A (en) | 1980-10-22 | 1981-10-21 | Semiconductor memory circuit |
DE8181304967T DE3176601D1 (en) | 1980-10-22 | 1981-10-22 | Semiconductor memory circuit |
IE2483/81A IE53512B1 (en) | 1980-10-22 | 1981-10-22 | Semiconductor memory circuit |
EP87104318A EP0239913B2 (en) | 1980-10-22 | 1981-10-22 | Semiconductor memory circuit |
EP81304967A EP0050529B1 (en) | 1980-10-22 | 1981-10-22 | Semiconductor memory circuit |
DE8787104318T DE3177221D1 (de) | 1980-10-22 | 1981-10-22 | Halbleiterspeicherschaltung. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55147773A JPS5771580A (en) | 1980-10-22 | 1980-10-22 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5771580A true JPS5771580A (en) | 1982-05-04 |
JPS6137707B2 JPS6137707B2 (enrdf_load_stackoverflow) | 1986-08-25 |
Family
ID=15437847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55147773A Granted JPS5771580A (en) | 1980-10-22 | 1980-10-22 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5771580A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60212894A (ja) * | 1984-04-06 | 1985-10-25 | Hitachi Ltd | ダイナミツク型ram |
JPS6394499A (ja) * | 1986-10-07 | 1988-04-25 | Toshiba Corp | 半導体記憶装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62193803U (enrdf_load_stackoverflow) * | 1986-05-28 | 1987-12-09 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113131A (en) * | 1975-09-08 | 1977-09-22 | Toko Inc | Sensing amplifier for one transistor |
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
-
1980
- 1980-10-22 JP JP55147773A patent/JPS5771580A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113131A (en) * | 1975-09-08 | 1977-09-22 | Toko Inc | Sensing amplifier for one transistor |
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60212894A (ja) * | 1984-04-06 | 1985-10-25 | Hitachi Ltd | ダイナミツク型ram |
JPS6394499A (ja) * | 1986-10-07 | 1988-04-25 | Toshiba Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6137707B2 (enrdf_load_stackoverflow) | 1986-08-25 |
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