JPS5758375A - Manufacture of photo-electric converting element - Google Patents

Manufacture of photo-electric converting element

Info

Publication number
JPS5758375A
JPS5758375A JP55133015A JP13301580A JPS5758375A JP S5758375 A JPS5758375 A JP S5758375A JP 55133015 A JP55133015 A JP 55133015A JP 13301580 A JP13301580 A JP 13301580A JP S5758375 A JPS5758375 A JP S5758375A
Authority
JP
Japan
Prior art keywords
layer
polysilicon layer
type polysilicon
converting element
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55133015A
Inventor
Shiro Hagiwara
Tetsuo Yamaji
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP55133015A priority Critical patent/JPS5758375A/en
Publication of JPS5758375A publication Critical patent/JPS5758375A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To manufacture a high efficiency, long life optico-electric converting element by a method wherein a metal wiring layer is selectively formed on a reverse conductivity type polysilicon or amorphous silicon layer and the external surface of the combination is nitrified by plasma CVD method before subjected to heat treatment. CONSTITUTION:Vapor deposited on an insulated substrate 16 is a negative electrode metal layer 15 and covering said metal layer 15 is a doped N-type polysilicon layer 14. A P-type polysilicon layer 13 with a prescribed dopant concentration is formed to cover the N-type polysilicon layer 14. Further, on the P-tue polysilicon layer 13, a positive electrode metal layer 12 is selectively vapor deposited. A light reflecting nitride film 21 is formed over both the metal layer 12 and the polysilicon layer 13 by the plasma CVD method. Lastly, heat treatment is effected inthe neighborhood of 500 deg.C to make alloy of the metal electrodes. This enables electric resistance to decrease without increasing manufacturing steps and the result is an photoelectric converting element with higher efficiency and longer service life.
JP55133015A 1980-09-26 1980-09-26 Manufacture of photo-electric converting element Pending JPS5758375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55133015A JPS5758375A (en) 1980-09-26 1980-09-26 Manufacture of photo-electric converting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55133015A JPS5758375A (en) 1980-09-26 1980-09-26 Manufacture of photo-electric converting element

Publications (1)

Publication Number Publication Date
JPS5758375A true JPS5758375A (en) 1982-04-08

Family

ID=15094795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55133015A Pending JPS5758375A (en) 1980-09-26 1980-09-26 Manufacture of photo-electric converting element

Country Status (1)

Country Link
JP (1) JPS5758375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501398A (en) * 1984-08-06 1986-07-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501398A (en) * 1984-08-06 1986-07-10

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