JPS5755776A - Semiconductor inverter circuit device - Google Patents
Semiconductor inverter circuit deviceInfo
- Publication number
- JPS5755776A JPS5755776A JP55132107A JP13210780A JPS5755776A JP S5755776 A JPS5755776 A JP S5755776A JP 55132107 A JP55132107 A JP 55132107A JP 13210780 A JP13210780 A JP 13210780A JP S5755776 A JPS5755776 A JP S5755776A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- inverter circuit
- circuit device
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 230000005669 field effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Inverter Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132107A JPS5755776A (en) | 1980-09-22 | 1980-09-22 | Semiconductor inverter circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132107A JPS5755776A (en) | 1980-09-22 | 1980-09-22 | Semiconductor inverter circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5755776A true JPS5755776A (en) | 1982-04-02 |
| JPH0150111B2 JPH0150111B2 (enrdf_load_stackoverflow) | 1989-10-27 |
Family
ID=15073603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55132107A Granted JPS5755776A (en) | 1980-09-22 | 1980-09-22 | Semiconductor inverter circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5755776A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01218365A (ja) * | 1988-02-25 | 1989-08-31 | Fanuc Ltd | インバータ装置 |
| JPH04355956A (ja) * | 1991-10-04 | 1992-12-09 | Hitachi Ltd | 半導体集積回路装置 |
| JPH053290A (ja) * | 1991-10-04 | 1993-01-08 | Hitachi Ltd | 半導体集積回路装置 |
| JP2007320573A (ja) * | 2006-05-30 | 2007-12-13 | Kao Corp | 包装体 |
-
1980
- 1980-09-22 JP JP55132107A patent/JPS5755776A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01218365A (ja) * | 1988-02-25 | 1989-08-31 | Fanuc Ltd | インバータ装置 |
| JPH04355956A (ja) * | 1991-10-04 | 1992-12-09 | Hitachi Ltd | 半導体集積回路装置 |
| JPH053290A (ja) * | 1991-10-04 | 1993-01-08 | Hitachi Ltd | 半導体集積回路装置 |
| JP2007320573A (ja) * | 2006-05-30 | 2007-12-13 | Kao Corp | 包装体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0150111B2 (enrdf_load_stackoverflow) | 1989-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56162875A (en) | Semiconductor device | |
| JPS5755776A (en) | Semiconductor inverter circuit device | |
| JPS5683075A (en) | Insulating gate type field-effect transistor circuit device | |
| JPS56126977A (en) | Junction type field effect transistor | |
| GB1098760A (en) | Method of making semiconductor device | |
| JPS57162360A (en) | Complementary insulated gate field effect semiconductor device | |
| JPS56111261A (en) | Thin film field effect semiconductor device | |
| JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
| JPS5710247A (en) | Semiconductor device | |
| JPS6489366A (en) | Semiconductor device | |
| JPS53110479A (en) | Production of semiconductor device | |
| GB1208030A (en) | A semiconductor device | |
| JPS5723271A (en) | Field effect transistor | |
| JPS5394775A (en) | Manufacture of semiconductor device | |
| JPS6433971A (en) | Thin film transistor | |
| JPS5615074A (en) | Semiconductor device | |
| JPS5458373A (en) | Field effect transistor and complementary type integrated circuit including it | |
| JPS5734368A (en) | Protective diode for insulated gate field-effect transistor | |
| JPS57121272A (en) | Field effect transistor | |
| GB2137411B (en) | Integrated circuit arrangement | |
| JPS538084A (en) | Mis type semiconductor device | |
| JPS57141964A (en) | Insulated gate type field effect transistor | |
| JPS5660065A (en) | Semiconductor device | |
| JPS5779661A (en) | Semiconductor device | |
| JPS5629369A (en) | Insulated gate type field effect transistor |