JPS5745967A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5745967A JPS5745967A JP55122651A JP12265180A JPS5745967A JP S5745967 A JPS5745967 A JP S5745967A JP 55122651 A JP55122651 A JP 55122651A JP 12265180 A JP12265180 A JP 12265180A JP S5745967 A JPS5745967 A JP S5745967A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- hole
- film
- wire
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 229910003082 TiO2-SiO2 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55122651A JPS5745967A (en) | 1980-09-04 | 1980-09-04 | Semiconductor device |
US06/289,995 US4533935A (en) | 1980-09-04 | 1981-08-04 | Semiconductor device and a method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55122651A JPS5745967A (en) | 1980-09-04 | 1980-09-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745967A true JPS5745967A (en) | 1982-03-16 |
Family
ID=14841244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55122651A Pending JPS5745967A (en) | 1980-09-04 | 1980-09-04 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4533935A (ja) |
JP (1) | JPS5745967A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS585356U (ja) * | 1981-07-02 | 1983-01-13 | 三洋電機株式会社 | 抵抗素子 |
JPS58222540A (ja) * | 1982-06-18 | 1983-12-24 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPS6185843A (ja) * | 1984-10-04 | 1986-05-01 | Nec Corp | 半導体装置 |
JPS61283146A (ja) * | 1985-06-10 | 1986-12-13 | Nec Corp | 半導体集積回路装置及びその製造方法 |
JPS62291956A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPS63315824A (ja) * | 1987-06-16 | 1988-12-23 | Nippon Steel Corp | 熱回収装置 |
JPS6435947A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Semiconductor element and manufacture thereof |
US5391906A (en) * | 1992-08-07 | 1995-02-21 | Yamaha Corporation | Semiconductor device provided with capacitor |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100520A (ja) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
DE3569172D1 (en) * | 1984-08-23 | 1989-05-03 | Toshiba Kk | Semiconductor memory device having a polycrystalline silicon layer |
US4612805A (en) * | 1984-12-24 | 1986-09-23 | International Business Machines Corporation | Adhesion characterization test site |
JP2741854B2 (ja) * | 1986-06-18 | 1998-04-22 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS63268258A (ja) * | 1987-04-24 | 1988-11-04 | Nec Corp | 半導体装置 |
JPS6465873A (en) * | 1987-09-07 | 1989-03-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
JPH01321656A (ja) * | 1988-06-23 | 1989-12-27 | Fujitsu Ltd | 半導体装置 |
JPH0258874A (ja) * | 1988-08-24 | 1990-02-28 | Nec Corp | 半導体集積回路装置 |
US5154514A (en) * | 1991-08-29 | 1992-10-13 | International Business Machines Corporation | On-chip temperature sensor utilizing a Schottky barrier diode structure |
US5367187A (en) * | 1992-12-22 | 1994-11-22 | Quality Semiconductor, Inc. | Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions |
US5652181A (en) * | 1993-11-10 | 1997-07-29 | Micron Display Technology, Inc. | Thermal process for forming high value resistors |
DE69510569T2 (de) * | 1994-01-20 | 1999-10-28 | Honda Giken Kogyo K.K., Tokio/Tokyo | Beschleunigungsmessaufnehmer |
US5461000A (en) * | 1994-07-05 | 1995-10-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing dielectric as load resistor in 4T SRAM |
US5470779A (en) * | 1994-07-25 | 1995-11-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacture of SRAM with SIPOS resistor |
JP2630292B2 (ja) * | 1995-02-27 | 1997-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US6445004B1 (en) | 1998-02-26 | 2002-09-03 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
US6337520B1 (en) | 1997-02-26 | 2002-01-08 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof |
JPH11195753A (ja) | 1997-10-27 | 1999-07-21 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JPH11195711A (ja) * | 1997-10-27 | 1999-07-21 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US6730984B1 (en) * | 2000-11-14 | 2004-05-04 | International Business Machines Corporation | Increasing an electrical resistance of a resistor by oxidation or nitridization |
WO2005024914A1 (en) * | 2003-09-10 | 2005-03-17 | Philips Intellectual Property & Standards Gmbh | Semiconductor arrangement with thin-film resistor |
US7176504B1 (en) * | 2005-09-28 | 2007-02-13 | United Microelectronics Corp. | SiGe MOSFET with an erosion preventing Six1Gey1 layer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583256A (en) * | 1978-12-20 | 1980-06-23 | Toshiba Corp | Semiconductor integrated circuit |
JPS5664460A (en) * | 1979-10-30 | 1981-06-01 | Mitsubishi Electric Corp | Semiconductor device |
JPS5683061A (en) * | 1979-12-11 | 1981-07-07 | Nec Corp | Semiconductor device |
JPS5694653A (en) * | 1979-12-27 | 1981-07-31 | Mitsubishi Electric Corp | Resistor |
JPS5740967A (en) * | 1980-08-22 | 1982-03-06 | Seiko Epson Corp | Integrated circuit device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
US4282647A (en) * | 1978-04-04 | 1981-08-11 | Standard Microsystems Corporation | Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask |
US4246593A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell with polysilicon resistors |
US4392150A (en) * | 1980-10-27 | 1983-07-05 | National Semiconductor Corporation | MOS Integrated circuit having refractory metal or metal silicide interconnect layer |
-
1980
- 1980-09-04 JP JP55122651A patent/JPS5745967A/ja active Pending
-
1981
- 1981-08-04 US US06/289,995 patent/US4533935A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583256A (en) * | 1978-12-20 | 1980-06-23 | Toshiba Corp | Semiconductor integrated circuit |
JPS5664460A (en) * | 1979-10-30 | 1981-06-01 | Mitsubishi Electric Corp | Semiconductor device |
JPS5683061A (en) * | 1979-12-11 | 1981-07-07 | Nec Corp | Semiconductor device |
JPS5694653A (en) * | 1979-12-27 | 1981-07-31 | Mitsubishi Electric Corp | Resistor |
JPS5740967A (en) * | 1980-08-22 | 1982-03-06 | Seiko Epson Corp | Integrated circuit device |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS585356U (ja) * | 1981-07-02 | 1983-01-13 | 三洋電機株式会社 | 抵抗素子 |
JPS58222540A (ja) * | 1982-06-18 | 1983-12-24 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPS6185843A (ja) * | 1984-10-04 | 1986-05-01 | Nec Corp | 半導体装置 |
JPH0578938B2 (ja) * | 1984-10-04 | 1993-10-29 | Nippon Electric Co | |
JPS61283146A (ja) * | 1985-06-10 | 1986-12-13 | Nec Corp | 半導体集積回路装置及びその製造方法 |
JPH0584671B2 (ja) * | 1985-06-10 | 1993-12-02 | Nippon Electric Co | |
JPS62291956A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPS63315824A (ja) * | 1987-06-16 | 1988-12-23 | Nippon Steel Corp | 熱回収装置 |
JPS6435947A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Semiconductor element and manufacture thereof |
US5391906A (en) * | 1992-08-07 | 1995-02-21 | Yamaha Corporation | Semiconductor device provided with capacitor |
Also Published As
Publication number | Publication date |
---|---|
US4533935A (en) | 1985-08-06 |
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