JPS5744026B2 - - Google Patents
Info
- Publication number
- JPS5744026B2 JPS5744026B2 JP51062606A JP6260676A JPS5744026B2 JP S5744026 B2 JPS5744026 B2 JP S5744026B2 JP 51062606 A JP51062606 A JP 51062606A JP 6260676 A JP6260676 A JP 6260676A JP S5744026 B2 JPS5744026 B2 JP S5744026B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6260676A JPS52146186A (en) | 1976-05-28 | 1976-05-28 | Semiconductor device |
NLAANVRAGE7705822,A NL178375C (nl) | 1976-05-28 | 1977-05-26 | Halfgeleiderinrichting. |
US05/947,050 US4228444A (en) | 1976-05-28 | 1978-09-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6260676A JPS52146186A (en) | 1976-05-28 | 1976-05-28 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52146186A JPS52146186A (en) | 1977-12-05 |
JPS5744026B2 true JPS5744026B2 (US07413550-20080819-C00001.png) | 1982-09-18 |
Family
ID=13205137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6260676A Granted JPS52146186A (en) | 1976-05-28 | 1976-05-28 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4228444A (US07413550-20080819-C00001.png) |
JP (1) | JPS52146186A (US07413550-20080819-C00001.png) |
NL (1) | NL178375C (US07413550-20080819-C00001.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144037U (US07413550-20080819-C00001.png) * | 1985-02-27 | 1986-09-05 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3639433A1 (de) * | 1986-11-18 | 1988-05-26 | Licentia Gmbh | Halbleiteranordnung |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988761A (en) * | 1970-02-06 | 1976-10-26 | Sony Corporation | Field-effect transistor and method of making the same |
NL7212912A (US07413550-20080819-C00001.png) * | 1972-09-23 | 1974-03-26 |
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1976
- 1976-05-28 JP JP6260676A patent/JPS52146186A/ja active Granted
-
1977
- 1977-05-26 NL NLAANVRAGE7705822,A patent/NL178375C/xx not_active IP Right Cessation
-
1978
- 1978-09-29 US US05/947,050 patent/US4228444A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144037U (US07413550-20080819-C00001.png) * | 1985-02-27 | 1986-09-05 |
Also Published As
Publication number | Publication date |
---|---|
JPS52146186A (en) | 1977-12-05 |
US4228444A (en) | 1980-10-14 |
NL178375C (nl) | 1986-03-03 |
NL178375B (nl) | 1985-10-01 |
NL7705822A (nl) | 1977-11-30 |