JPS5733632B2 - - Google Patents

Info

Publication number
JPS5733632B2
JPS5733632B2 JP5649277A JP5649277A JPS5733632B2 JP S5733632 B2 JPS5733632 B2 JP S5733632B2 JP 5649277 A JP5649277 A JP 5649277A JP 5649277 A JP5649277 A JP 5649277A JP S5733632 B2 JPS5733632 B2 JP S5733632B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5649277A
Other versions
JPS52154314A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52154314A publication Critical patent/JPS52154314A/ja
Publication of JPS5733632B2 publication Critical patent/JPS5733632B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4097Bit-line organisation, e.g. bit-line layout, folded bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
JP5649277A 1976-06-17 1977-05-18 Expired JPS5733632B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/697,188 US4103342A (en) 1976-06-17 1976-06-17 Two-device memory cell with single floating capacitor

Publications (2)

Publication Number Publication Date
JPS52154314A JPS52154314A (en) 1977-12-22
JPS5733632B2 true JPS5733632B2 (ja) 1982-07-17

Family

ID=24800170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5649277A Expired JPS5733632B2 (ja) 1976-06-17 1977-05-18

Country Status (8)

Country Link
US (1) US4103342A (ja)
JP (1) JPS5733632B2 (ja)
CA (1) CA1095620A (ja)
DE (1) DE2725613C2 (ja)
FR (1) FR2355358B1 (ja)
GB (1) GB1523094A (ja)
IT (1) IT1115344B (ja)
NL (1) NL7704931A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228607Y2 (ja) * 1983-08-10 1987-07-22

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740113A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierter halbleiterspeicher
US4160275A (en) * 1978-04-03 1979-07-03 International Business Machines Corporation Accessing arrangement for memories with small cells
JPS5634179A (en) * 1979-08-24 1981-04-06 Mitsubishi Electric Corp Control circuit for memory unit
US4413330A (en) * 1981-06-30 1983-11-01 International Business Machines Corporation Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array
GB2144937B (en) * 1981-08-05 1986-02-19 Gen Instrument Corp A storage cell suitable for use in a storage cell logic array
JPH0414436B2 (ja) * 1984-06-29 1992-03-12 Sharp Kk
FR2595160A1 (fr) * 1986-02-28 1987-09-04 Eurotechnique Sa Cellule memoire couplee et memoire dynamique comportant une telle cellule
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
JPH02168492A (en) * 1988-12-21 1990-06-28 Nec Corp Memory cell for dynamic ram
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
US5219779A (en) * 1989-05-11 1993-06-15 Sharp Kabushiki Kaisha Memory cell for dynamic random access memory
JP2719237B2 (ja) * 1990-12-20 1998-02-25 シャープ株式会社 ダイナミック型半導体記憶装置
US5363327A (en) * 1993-01-19 1994-11-08 International Business Machines Corporation Buried-sidewall-strap two transistor one capacitor trench cell
KR0146075B1 (ko) * 1995-05-25 1998-11-02 문정환 반도체 메모리 셀
WO2003052829A1 (en) * 2001-12-14 2003-06-26 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
US6888187B2 (en) * 2002-08-26 2005-05-03 International Business Machines Corporation DRAM cell with enhanced SER immunity
US7164595B1 (en) * 2005-08-25 2007-01-16 Micron Technology, Inc. Device and method for using dynamic cell plate sensing in a DRAM memory cell
EP3507808A4 (en) 2016-08-31 2020-05-27 Micron Technology, Inc. MEMORY NETWORKS
JP6737953B2 (ja) 2016-08-31 2020-08-12 マイクロン テクノロジー,インク. 強誘電体メモリを含む装置および強誘電体メモリにアクセスするための方法
US10355002B2 (en) * 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
CN109155310A (zh) 2016-08-31 2019-01-04 美光科技公司 存储器单元及存储器阵列
EP3507807A4 (en) 2016-08-31 2020-04-29 Micron Technology, Inc. DEVICES AND METHOD WITH AND FOR ACCESS TO ITEMS
SG11201901168UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
CN109155311A (zh) 2016-08-31 2019-01-04 美光科技公司 存储器单元及存储器阵列
KR102195321B1 (ko) 2016-08-31 2020-12-24 마이크론 테크놀로지, 인크 감지 증폭기 구성물
EP3507831B1 (en) 2016-08-31 2021-03-03 Micron Technology, Inc. Memory arrays
EP3507804A4 (en) 2016-08-31 2020-07-15 Micron Technology, INC. FERROELECTRIC STORAGE CELLS
KR102134532B1 (ko) 2016-08-31 2020-07-20 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
WO2018132250A1 (en) 2017-01-12 2018-07-19 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10083973B1 (en) * 2017-08-09 2018-09-25 Micron Technology, Inc. Apparatuses and methods for reading memory cells
KR102359067B1 (ko) 2017-08-29 2022-02-08 마이크론 테크놀로지, 인크 메모리 회로

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4420093Y1 (ja) * 1966-04-27 1969-08-28
JPS513824A (ja) * 1974-06-28 1976-01-13 Ibm

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463992A (en) * 1966-06-13 1969-08-26 Gen Electric Electrical capacitor systems having long-term storage characteristics
US3585185A (en) * 1968-05-13 1971-06-15 Wyandotte Chemicals Corp Ester-containing polyols
US3938109A (en) * 1975-02-19 1976-02-10 Intel Corporation High speed ECL compatible MOS-Ram

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4420093Y1 (ja) * 1966-04-27 1969-08-28
JPS513824A (ja) * 1974-06-28 1976-01-13 Ibm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228607Y2 (ja) * 1983-08-10 1987-07-22

Also Published As

Publication number Publication date
FR2355358A1 (fr) 1978-01-13
DE2725613A1 (de) 1977-12-29
JPS52154314A (en) 1977-12-22
GB1523094A (en) 1978-08-31
FR2355358B1 (ja) 1979-03-09
DE2725613C2 (de) 1984-05-24
US4103342A (en) 1978-07-25
IT1115344B (it) 1986-02-03
NL7704931A (nl) 1977-12-20
CA1095620A (en) 1981-02-10

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