JPS5723448A - Target of storage type image pick-up tube and its manufacture - Google Patents
Target of storage type image pick-up tube and its manufactureInfo
- Publication number
- JPS5723448A JPS5723448A JP9855880A JP9855880A JPS5723448A JP S5723448 A JPS5723448 A JP S5723448A JP 9855880 A JP9855880 A JP 9855880A JP 9855880 A JP9855880 A JP 9855880A JP S5723448 A JPS5723448 A JP S5723448A
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- electrode
- chamber
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
PURPOSE:To obtain a target which can be manufactured easily while having excellent photoconductive characteristic, by heating the film at specific temperature during or after the formation of undoped amorphous Si film through the glow discharge decomposition. CONSTITUTION:A face plate where a transparent electrode 2 is secured on the upper face of Si board 30 is mounted such that the transparent electrode 2 will face against an electrode 28. Under this condition a discharge chamber 21 is sufficiently exhausted then a bulb 26 is opened to supply 100% SiH4 gas into the chamber 21 with proper flow. When throwing in a high frequency power source 29 while maintaining the chamber 21 at predetermined vacuum, the glow discharge will occur between the electrodes 27 and 28 to decompose SiH4 thus to from undoped amorphous Si film 13 on the electrode 2. During or after the formation of the film 13 it is maintained at the temperature of 200-300 deg.C by means of a heater in the electrode 27. Thereafter a blocking film 4 is provided on the film 13 to produce the target.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9855880A JPS5723448A (en) | 1980-07-18 | 1980-07-18 | Target of storage type image pick-up tube and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9855880A JPS5723448A (en) | 1980-07-18 | 1980-07-18 | Target of storage type image pick-up tube and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5723448A true JPS5723448A (en) | 1982-02-06 |
Family
ID=14223014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9855880A Pending JPS5723448A (en) | 1980-07-18 | 1980-07-18 | Target of storage type image pick-up tube and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723448A (en) |
-
1980
- 1980-07-18 JP JP9855880A patent/JPS5723448A/en active Pending
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