JPS57207366A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207366A
JPS57207366A JP56091802A JP9180281A JPS57207366A JP S57207366 A JPS57207366 A JP S57207366A JP 56091802 A JP56091802 A JP 56091802A JP 9180281 A JP9180281 A JP 9180281A JP S57207366 A JPS57207366 A JP S57207366A
Authority
JP
Japan
Prior art keywords
heating
film
substrate
active region
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56091802A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516177B2 (enrdf_load_html_response
Inventor
Hideo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56091802A priority Critical patent/JPS57207366A/ja
Publication of JPS57207366A publication Critical patent/JPS57207366A/ja
Publication of JPH0516177B2 publication Critical patent/JPH0516177B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP56091802A 1981-06-15 1981-06-15 Manufacture of semiconductor device Granted JPS57207366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56091802A JPS57207366A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56091802A JPS57207366A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57207366A true JPS57207366A (en) 1982-12-20
JPH0516177B2 JPH0516177B2 (enrdf_load_html_response) 1993-03-03

Family

ID=14036745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56091802A Granted JPS57207366A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207366A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731500A3 (en) * 1995-03-08 1998-05-20 Hitachi, Ltd. Method of forming a semiconductor device comprising an oxidation step followed by a heat-treatment step
US6291365B1 (en) 1999-02-10 2001-09-18 Nec Corporation Method for manufacturing thin gate silicon oxide layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320862A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320862A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731500A3 (en) * 1995-03-08 1998-05-20 Hitachi, Ltd. Method of forming a semiconductor device comprising an oxidation step followed by a heat-treatment step
US6326284B1 (en) 1995-03-08 2001-12-04 Hitachi, Ltd. Semiconductor device and production thereof
US6291365B1 (en) 1999-02-10 2001-09-18 Nec Corporation Method for manufacturing thin gate silicon oxide layer

Also Published As

Publication number Publication date
JPH0516177B2 (enrdf_load_html_response) 1993-03-03

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