JPS57197823A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS57197823A
JPS57197823A JP8205381A JP8205381A JPS57197823A JP S57197823 A JPS57197823 A JP S57197823A JP 8205381 A JP8205381 A JP 8205381A JP 8205381 A JP8205381 A JP 8205381A JP S57197823 A JPS57197823 A JP S57197823A
Authority
JP
Japan
Prior art keywords
solution
liquid phase
growing method
phase epitaxial
gasb substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8205381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626336B2 (https=
Inventor
Yutaka Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8205381A priority Critical patent/JPS57197823A/ja
Publication of JPS57197823A publication Critical patent/JPS57197823A/ja
Publication of JPS626336B2 publication Critical patent/JPS626336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8205381A 1981-05-29 1981-05-29 Liquid phase epitaxial growing method Granted JPS57197823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8205381A JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8205381A JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS57197823A true JPS57197823A (en) 1982-12-04
JPS626336B2 JPS626336B2 (https=) 1987-02-10

Family

ID=13763764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8205381A Granted JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS57197823A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3041751U (ja) * 1997-03-25 1997-10-03 清一 菅生 ラジオ付き帽子

Also Published As

Publication number Publication date
JPS626336B2 (https=) 1987-02-10

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