JPS57190346A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS57190346A JPS57190346A JP7590381A JP7590381A JPS57190346A JP S57190346 A JPS57190346 A JP S57190346A JP 7590381 A JP7590381 A JP 7590381A JP 7590381 A JP7590381 A JP 7590381A JP S57190346 A JPS57190346 A JP S57190346A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- output terminal
- closed
- substrate
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Abstract
PURPOSE:To obtain the sufficient preventing effect of electrostatic destruction of an integrated circuit device without destroying the characteristic by a method wherein an input terminal of normally closed junction type FET is connected to an input/output terminal of IC, the output terminal thereof is connected to a substrate of the IC, and the FET is made to open after an electric power source for the IC is closed. CONSTITUTION:The input terminal of the normally closed junction type FET 2-6 is connected between the output buffer 2-2 and an output terminal 2-1, and the output terminal 2-1 of the FET 2-6 is connected to a VDD terminal. Because the FET 2-6 is closed normally before the electric power source is to be closed, the output terminal 2-1 is connected to the VDD terminal, namely to the IC substrate. When the electric power source is closed to the IC, because a gate of the FET 2-6 is earthed and the IC substrate has the voltage VDD, the FET 2-6 is made to OFF. While because the voltage to be generated on the output terminal is reduced owing to large electrostatic capacity of the substrate, electrostatic destruction of the FET is not generated, and because an outside wiring and an active element is connected thereto during operation, static electricity is hard to be generated and is easy to be discharged, and destruction to be generated by static electricity can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7590381A JPS57190346A (en) | 1981-05-20 | 1981-05-20 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7590381A JPS57190346A (en) | 1981-05-20 | 1981-05-20 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190346A true JPS57190346A (en) | 1982-11-22 |
Family
ID=13589755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7590381A Pending JPS57190346A (en) | 1981-05-20 | 1981-05-20 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190346A (en) |
-
1981
- 1981-05-20 JP JP7590381A patent/JPS57190346A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW335548B (en) | Voltage detection circuit, power on, of reset circuit and transistor device | |
JPS577969A (en) | Semiconductor integrated circuit | |
JPS54116887A (en) | Mos type semiconductor device | |
EP0802604A3 (en) | Protection circuit | |
JPS57166713A (en) | Output circuit | |
JPS57190346A (en) | Integrated circuit device | |
JPS57160148A (en) | Microwave integrated circuit device | |
JPS6436060A (en) | Static electricity protective device of mis integrated circuit | |
JPS5667962A (en) | Gate protection circuit of mos field effect transistor | |
JPS55166953A (en) | Semiconductor integrated circuit device | |
EP0083699A3 (en) | Protective circuit for semiconductor devices | |
JPS57152593A (en) | Insulated gate type storing circuit | |
JPS5713819A (en) | Output interface circuit | |
JPS57162466A (en) | Input-output protective circuit for integrated circuit | |
JPS57162468A (en) | Semiconductor integrated circuit | |
JPS53126284A (en) | Semiconductor integrated circuit | |
JPS57126161A (en) | Integrated circuit device | |
JPS5638853A (en) | System for protecting input and output of semiconductor integrated circuit | |
JPS57180159A (en) | Mos integrated circuit device | |
JPS55101188A (en) | Semiconductor circuit | |
JPS556856A (en) | Semiconductor integrated circuit | |
JPS5717227A (en) | Integrated circuit device | |
JPS5640279A (en) | Semiconductor integrated circuit | |
RU2012127C1 (en) | Emitter follower | |
JPS5571066A (en) | Semiconductor integrated circuit device |