JPS5717161A - Method of producing mos and bipolar semiconductor integrated circuits - Google Patents

Method of producing mos and bipolar semiconductor integrated circuits

Info

Publication number
JPS5717161A
JPS5717161A JP7285381A JP7285381A JPS5717161A JP S5717161 A JPS5717161 A JP S5717161A JP 7285381 A JP7285381 A JP 7285381A JP 7285381 A JP7285381 A JP 7285381A JP S5717161 A JPS5717161 A JP S5717161A
Authority
JP
Japan
Prior art keywords
integrated circuits
semiconductor integrated
bipolar semiconductor
producing mos
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7285381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235469B2 (https=
Inventor
Miyuraa Uorufugangu
Raihieruto Hansuieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5717161A publication Critical patent/JPS5717161A/ja
Publication of JPH0235469B2 publication Critical patent/JPH0235469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP7285381A 1980-05-16 1981-05-14 Method of producing mos and bipolar semiconductor integrated circuits Granted JPS5717161A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803018848 DE3018848A1 (de) 1980-05-16 1980-05-16 Verfahren zur herstellung monolithisch intetgrierter mos- und bipolar-halbleiteranordnungen fuer den vhf- und den uhf-bereich

Publications (2)

Publication Number Publication Date
JPS5717161A true JPS5717161A (en) 1982-01-28
JPH0235469B2 JPH0235469B2 (https=) 1990-08-10

Family

ID=6102649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7285381A Granted JPS5717161A (en) 1980-05-16 1981-05-14 Method of producing mos and bipolar semiconductor integrated circuits

Country Status (2)

Country Link
JP (1) JPS5717161A (https=)
DE (1) DE3018848A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01155653A (ja) * 1987-11-13 1989-06-19 Texas Instr Inc <Ti> 高電圧併合バイポーラ／ｃｍｏｓ集積回路
JPH01226172A (ja) * 1988-03-07 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPH02130868A (ja) * 1988-11-10 1990-05-18 Toshiba Corp 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4411869C2 (de) * 1994-04-06 1997-05-15 Siemens Ag Schaltungsanordnung mit einer integrierten Treiberschaltungsanordnung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01155653A (ja) * 1987-11-13 1989-06-19 Texas Instr Inc <Ti> 高電圧併合バイポーラ／ｃｍｏｓ集積回路
JPH01226172A (ja) * 1988-03-07 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPH02130868A (ja) * 1988-11-10 1990-05-18 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3018848C2 (https=) 1989-02-16
JPH0235469B2 (https=) 1990-08-10
DE3018848A1 (de) 1981-11-26

Similar Documents

Publication Publication Date Title
EP0092871A3 (en) Semiconductor integrated circuits and method of manufacturing
DE3379364D1 (en) Bipolar transistor integrated circuit and method for manufacturing
DE3271346D1 (en) Method of making integrated bipolar transistors of very small dimensions
JPS5749247A (en) Semiconductor wafer and method of producing same
DE3361832D1 (en) Semiconductor ic and method of making the same
JPS5375781A (en) Method of producing mos semiconductor circuit
JPS57177581A (en) Josephoson junction integrated circuit and method of producing same
DE3378446D1 (en) Integrated semiconductor circuit, comprising bipolar and mos transistors on the same chip, and method of making the same
DE3066684D1 (en) Semiconductor device having pairs of vertical complementary bipolar transistors and method of fabrication therefor
JPS5534500A (en) Integrated mos semiconductor memory and method of manufacturing same
DE3471824D1 (en) Method of manufacturing mos type semiconductor devices
GB2168845B (en) Bipolar transistor integrated circuit and method of manufacturing the same
DE3172502D1 (en) Saturation-limited bipolar transistor circuit structure and method of making
DE3278605D1 (en) Intermediate structure for use in the manufacture of semiconductor devices, method of making field effect transistors and transistors
EP0180457A3 (en) Semiconductor integrated circuit device and method for producing same
DE3380285D1 (en) Mos semiconductor device and method of producing the same
GB2104722B (en) Mos semiconductor device and method of manufacturing the same
JPS5585052A (en) Semiconductor integrated circuit and method of fabricating same
DE3474883D1 (en) Integrated circuit having bipolar and field effect devices and method of fabrication
DE3167300D1 (en) Planar semiconductor integrated circuits including improved bipolar transistor structures and method of fabricating such circuits
DE3272090D1 (en) Method of manufacturing an integrated planar bipolar transistor
JPS57117235A (en) High resistance semiconductor substrate and method of producing same
JPS5717161A (en) Method of producing mos and bipolar semiconductor integrated circuits
JPS5527697A (en) Bipolar semiconductor integrated circuit and method of manufacturing same
GB2009498B (en) Methods of making semiconductor integrated circuits and circuits made by such method