JPS57162345A - Manufacture of insulation isolating substrate - Google Patents
Manufacture of insulation isolating substrateInfo
- Publication number
- JPS57162345A JPS57162345A JP4677081A JP4677081A JPS57162345A JP S57162345 A JPS57162345 A JP S57162345A JP 4677081 A JP4677081 A JP 4677081A JP 4677081 A JP4677081 A JP 4677081A JP S57162345 A JPS57162345 A JP S57162345A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polycrystalline
- shaped grooves
- single crystal
- rear surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4677081A JPS57162345A (en) | 1981-03-30 | 1981-03-30 | Manufacture of insulation isolating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4677081A JPS57162345A (en) | 1981-03-30 | 1981-03-30 | Manufacture of insulation isolating substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162345A true JPS57162345A (en) | 1982-10-06 |
| JPS6152983B2 JPS6152983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-11-15 |
Family
ID=12756557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4677081A Granted JPS57162345A (en) | 1981-03-30 | 1981-03-30 | Manufacture of insulation isolating substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722629A (ja) * | 1991-06-25 | 1995-01-24 | Mitsubishi Materials Shilicon Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63140041U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-03-07 | 1988-09-14 |
-
1981
- 1981-03-30 JP JP4677081A patent/JPS57162345A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722629A (ja) * | 1991-06-25 | 1995-01-24 | Mitsubishi Materials Shilicon Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57162345A (en) | Manufacture of insulation isolating substrate | |
| JPS6481247A (en) | Method of forming field oxide film of semiconductor device and semiconductor device | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS57162346A (en) | Manufacutre of insulating and isolating substrate | |
| JPS56161677A (en) | Forming method for diaphragm | |
| JPS5694673A (en) | Semiconductor junction capacity device and manufacture thereof | |
| JPS57204146A (en) | Manufacture of semiconductor device | |
| JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
| JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
| JPS5455181A (en) | Production of semiconductor substrate | |
| JPS5419681A (en) | Dielectric isolating substrate and production of the same | |
| JPS5687339A (en) | Manufacture of semiconductor device | |
| JPS5637663A (en) | Capacitor | |
| JPS5791564A (en) | Solar battery | |
| JPS57196544A (en) | Manufacture of integrated circuit isolated by oxide film | |
| JPS5322382A (en) | Production of dielectric isolating substrate | |
| JPS5399881A (en) | Manufacture of dielectric separation substrate | |
| JPS53101977A (en) | Diffusion method of inpurity to semiconductor substrate | |
| JPS6439745A (en) | Manufacture of semiconductor substrate for integrated circuit device | |
| JPS5314555A (en) | Depositing method of impurity to silicon wafersa | |
| JPS5710225A (en) | Forming method for silicon single crystalline film | |
| JPS54137983A (en) | Manufacture of mos semiconductor device | |
| KR960012652B1 (en) | Fabricating method of high purity region | |
| JPS5724577A (en) | Manufacture of solid state image pick up device | |
| JPS5658248A (en) | Production of semiconductor device |