JPS57160143A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57160143A
JPS57160143A JP4507981A JP4507981A JPS57160143A JP S57160143 A JPS57160143 A JP S57160143A JP 4507981 A JP4507981 A JP 4507981A JP 4507981 A JP4507981 A JP 4507981A JP S57160143 A JPS57160143 A JP S57160143A
Authority
JP
Japan
Prior art keywords
region
wiring
complementary elements
small number
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4507981A
Other languages
English (en)
Inventor
Takeyuki Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4507981A priority Critical patent/JPS57160143A/ja
Publication of JPS57160143A publication Critical patent/JPS57160143A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP4507981A 1981-03-27 1981-03-27 Semiconductor device Pending JPS57160143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4507981A JPS57160143A (en) 1981-03-27 1981-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4507981A JPS57160143A (en) 1981-03-27 1981-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57160143A true JPS57160143A (en) 1982-10-02

Family

ID=12709318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4507981A Pending JPS57160143A (en) 1981-03-27 1981-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160143A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186769A2 (en) * 1984-12-03 1986-07-09 International Business Machines Corporation Integrated circuit chip structure with wiringnet capacitive load compensation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186769A2 (en) * 1984-12-03 1986-07-09 International Business Machines Corporation Integrated circuit chip structure with wiringnet capacitive load compensation

Similar Documents

Publication Publication Date Title
JPS5299786A (en) Mos integrated circuit
DE3888603D1 (de) Halbleiterbauelement mit Floating-Gate.
KR850008763A (ko) 오동작 방지수단을 갖는 반도체장치
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE3381367D1 (de) Mos-transistor.
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
DE3579182D1 (de) Halbleiteranordnung mit einem treiberschaltungselement und einem ausgangstransistor.
EP0270219A3 (en) Reduced parallel exclusive or and exclusive nor gate
DE69317562D1 (de) Halbleiteranordnung mit doppelgate.
NL7708526A (nl) Geintegreerde halfgeleiderketen met statische inductietransistor.
DE68926227D1 (de) Feldeffekthalbleiteranordnung mit Schottky-Gate
DE3686180D1 (de) Vertikaler mos-transistor mit peripherer schaltung.
IT8683616A0 (it) Dispositivo a semiconduttore integrato di tipo mos con spessore dell'ossido di porta non uniforme e procedimento di fabbricazione dello stesso.
JPS57160143A (en) Semiconductor device
DE3689712D1 (de) NOR-Gatter mit Festlegung des niedrigen logischen Ausgangswertes.
EP0137257A3 (en) Resistive gate field effect transistor logic family
IT1085436B (it) Componente a semiconduttori con due diodi elementari incrociati e con proprieta' di transistore
DE3780895D1 (de) Komplementaerer feldeffekt-transistor mit isoliertem gate.
JPS5745948A (en) Semiconductor integrated circuit device
MX144142A (es) Mejoras en semiconductor que opera en la region logica de inyeccion integrada
DE3853313D1 (de) Integrierter Transistor und sein Herstellungsverfahren.
JPS52132685A (en) Semiconductor integrated circuit device
DE69033265D1 (de) Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren
DE69124341D1 (de) Integrierte Halbleiteranordnung mit ECL-Gatterschaltungen
JPS53112057A (en) Production of semiconductor device