JPS57152595A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS57152595A
JPS57152595A JP3856381A JP3856381A JPS57152595A JP S57152595 A JPS57152595 A JP S57152595A JP 3856381 A JP3856381 A JP 3856381A JP 3856381 A JP3856381 A JP 3856381A JP S57152595 A JPS57152595 A JP S57152595A
Authority
JP
Japan
Prior art keywords
electric potential
source side
mos type
memory cell
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3856381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS613033B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3856381A priority Critical patent/JPS57152595A/ja
Publication of JPS57152595A publication Critical patent/JPS57152595A/ja
Publication of JPS613033B2 publication Critical patent/JPS613033B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP3856381A 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device Granted JPS57152595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3856381A JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3856381A JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57152595A true JPS57152595A (en) 1982-09-20
JPS613033B2 JPS613033B2 (enrdf_load_stackoverflow) 1986-01-29

Family

ID=12528763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3856381A Granted JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57152595A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163999A (ja) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Ｅｐｒｏｍ及びｅｅｐｒｏｍのプログラム装置
JPS637599A (ja) * 1986-06-26 1988-01-13 Nec Corp 不揮発性半導体記憶装置
JPS6326898A (ja) * 1986-06-03 1988-02-04 エスジーエス―トムソン　マイクロエレクトロニクス　エス．ピー．エイ． ソ−スバイアス電圧発生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163999A (ja) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Ｅｐｒｏｍ及びｅｅｐｒｏｍのプログラム装置
JPS6326898A (ja) * 1986-06-03 1988-02-04 エスジーエス―トムソン　マイクロエレクトロニクス　エス．ピー．エイ． ソ−スバイアス電圧発生装置
JPS637599A (ja) * 1986-06-26 1988-01-13 Nec Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPS613033B2 (enrdf_load_stackoverflow) 1986-01-29

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