JPS57132367A - Manufacture of schottky barrier gate type field-effect transistor - Google Patents

Manufacture of schottky barrier gate type field-effect transistor

Info

Publication number
JPS57132367A
JPS57132367A JP56017925A JP1792581A JPS57132367A JP S57132367 A JPS57132367 A JP S57132367A JP 56017925 A JP56017925 A JP 56017925A JP 1792581 A JP1792581 A JP 1792581A JP S57132367 A JPS57132367 A JP S57132367A
Authority
JP
Japan
Prior art keywords
layer
metal
rectilinear
manufacture
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56017925A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214109B2 (enrdf_load_stackoverflow
Inventor
Yasunobu Ishii
Masao Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56017925A priority Critical patent/JPS57132367A/ja
Publication of JPS57132367A publication Critical patent/JPS57132367A/ja
Publication of JPS6214109B2 publication Critical patent/JPS6214109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56017925A 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor Granted JPS57132367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017925A JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017925A JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS57132367A true JPS57132367A (en) 1982-08-16
JPS6214109B2 JPS6214109B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=11957338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017925A Granted JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57132367A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6214109B2 (enrdf_load_stackoverflow) 1987-03-31

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