JPS57125824A - Schottky photodetector - Google Patents
Schottky photodetectorInfo
- Publication number
- JPS57125824A JPS57125824A JP56013331A JP1333181A JPS57125824A JP S57125824 A JPS57125824 A JP S57125824A JP 56013331 A JP56013331 A JP 56013331A JP 1333181 A JP1333181 A JP 1333181A JP S57125824 A JPS57125824 A JP S57125824A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- schottky junction
- lead
- side electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000001514 detection method Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012466 permeate Substances 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56013331A JPS57125824A (en) | 1981-01-29 | 1981-01-29 | Schottky photodetector |
DE19813145840 DE3145840A1 (de) | 1980-11-25 | 1981-11-19 | Optisches detektorelement vom schottky-typ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56013331A JPS57125824A (en) | 1981-01-29 | 1981-01-29 | Schottky photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57125824A true JPS57125824A (en) | 1982-08-05 |
JPS6214765B2 JPS6214765B2 (enrdf_load_stackoverflow) | 1987-04-03 |
Family
ID=11830151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56013331A Granted JPS57125824A (en) | 1980-11-25 | 1981-01-29 | Schottky photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57125824A (enrdf_load_stackoverflow) |
-
1981
- 1981-01-29 JP JP56013331A patent/JPS57125824A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6214765B2 (enrdf_load_stackoverflow) | 1987-04-03 |
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