JPS5690978A - Method and apparatus for plasma etching - Google Patents

Method and apparatus for plasma etching

Info

Publication number
JPS5690978A
JPS5690978A JP16721679A JP16721679A JPS5690978A JP S5690978 A JPS5690978 A JP S5690978A JP 16721679 A JP16721679 A JP 16721679A JP 16721679 A JP16721679 A JP 16721679A JP S5690978 A JPS5690978 A JP S5690978A
Authority
JP
Japan
Prior art keywords
changing
control circuit
high frequency
variable resistor
plasma density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16721679A
Other languages
Japanese (ja)
Other versions
JPS5825742B2 (en
Inventor
Naomichi Abe
Masanao Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16721679A priority Critical patent/JPS5825742B2/en
Publication of JPS5690978A publication Critical patent/JPS5690978A/en
Publication of JPS5825742B2 publication Critical patent/JPS5825742B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To perform reactive ion etching with a small number of defectives such as under cut, by controlling independently high frequency voltage which prescribes the plasma density, and bias voltage which prescribes sputtering force.
CONSTITUTION: In the control circuit of a reactive ion etching apparatus, a bias control circuit 7, made by connecting a coil L and a variable resistor R in series, is provided in parallel with a capacitor C. In etching by means of said control circuit, changing the value of variable resistor R with material 4 to be treated set at the anode 2 allows to change the drop in the anode voltage without changing the high frequency voltage rf. That is, sputtering force can be changed without changing the plasma density. Hence the plasma density which is a factor of etching rate is selected at need with the high frequency voltage rf, and the sputtering force which is a defective cause for the material to be treated is selected at need by the variable resistor R.
COPYRIGHT: (C)1981,JPO&Japio
JP16721679A 1979-12-22 1979-12-22 Plasma etching processing method and processing equipment Expired JPS5825742B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16721679A JPS5825742B2 (en) 1979-12-22 1979-12-22 Plasma etching processing method and processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16721679A JPS5825742B2 (en) 1979-12-22 1979-12-22 Plasma etching processing method and processing equipment

Publications (2)

Publication Number Publication Date
JPS5690978A true JPS5690978A (en) 1981-07-23
JPS5825742B2 JPS5825742B2 (en) 1983-05-30

Family

ID=15845574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16721679A Expired JPS5825742B2 (en) 1979-12-22 1979-12-22 Plasma etching processing method and processing equipment

Country Status (1)

Country Link
JP (1) JPS5825742B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210631A (en) * 1981-06-19 1982-12-24 Toshiba Corp Reactive type ion etching method
JPS6077428A (en) * 1983-10-04 1985-05-02 Anelva Corp Sputtering device
EP0140294A2 (en) * 1983-10-19 1985-05-08 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
JPS6098630A (en) * 1983-10-13 1985-06-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニー Method of producing device
JPH01183125A (en) * 1988-01-18 1989-07-20 Matsushita Electric Ind Co Ltd Dry etching method
JPH08321484A (en) * 1995-05-24 1996-12-03 Nec Corp Manufacture of semiconductor device
WO2008121654A1 (en) * 2007-03-30 2008-10-09 Lam Research Corporation Method and apparatus for inducing dc voltage on wafer-facing electrode
US9536711B2 (en) 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210631A (en) * 1981-06-19 1982-12-24 Toshiba Corp Reactive type ion etching method
JPS6077428A (en) * 1983-10-04 1985-05-02 Anelva Corp Sputtering device
JPS6098630A (en) * 1983-10-13 1985-06-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニー Method of producing device
EP0140294A2 (en) * 1983-10-19 1985-05-08 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
JPH01183125A (en) * 1988-01-18 1989-07-20 Matsushita Electric Ind Co Ltd Dry etching method
JPH08321484A (en) * 1995-05-24 1996-12-03 Nec Corp Manufacture of semiconductor device
WO2008121654A1 (en) * 2007-03-30 2008-10-09 Lam Research Corporation Method and apparatus for inducing dc voltage on wafer-facing electrode
US8450635B2 (en) 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
US9536711B2 (en) 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode

Also Published As

Publication number Publication date
JPS5825742B2 (en) 1983-05-30

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