JPS5676522A - Formation of semiconductor thin film - Google Patents

Formation of semiconductor thin film

Info

Publication number
JPS5676522A
JPS5676522A JP15359979A JP15359979A JPS5676522A JP S5676522 A JPS5676522 A JP S5676522A JP 15359979 A JP15359979 A JP 15359979A JP 15359979 A JP15359979 A JP 15359979A JP S5676522 A JPS5676522 A JP S5676522A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor
film
substrate
si
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15359979A
Inventor
Hisakazu Iizuka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15359979A priority Critical patent/JPS5676522A/en
Publication of JPS5676522A publication Critical patent/JPS5676522A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain a high quality semiconductor thin film by coating a semiconductor film on a metallic or insulating substrate, implanting ions thereon, subsequently irradiating energy beam thereon thereby forming monocrystal and then epitaxially growing it. CONSTITUTION:Polycrystalline or amorphous silicon thin film 2 is coated on a substrate 1 such as a sapphire or the like. Subsequently, ions 3 of Si or B, P, O or the like are implanted to desired region thereby forming sufficient amount of crystalline defects. Then, energy beam 4 such as laser light or electron beam or the like is irradiated thereto under nonoxidative atmosphere. At this time the Si thin film 2 having crystalline defects readily absorbs the energy, so that the semiconductor atoms are oriented to thereby cause an instantaneous growth of monocrystal. Successively, the Si thin film 5 is epitaxially grown. Thus, a high quality crystalline film can be grown on the insulating or metallic substrate.
JP15359979A 1979-11-29 1979-11-29 Formation of semiconductor thin film Pending JPS5676522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15359979A JPS5676522A (en) 1979-11-29 1979-11-29 Formation of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15359979A JPS5676522A (en) 1979-11-29 1979-11-29 Formation of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS5676522A true JPS5676522A (en) 1981-06-24

Family

ID=15566001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15359979A Pending JPS5676522A (en) 1979-11-29 1979-11-29 Formation of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS5676522A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890759A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Stacking type semiconductor device
JPS5890760A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Lamination type semiconductor device
JPS59155121A (en) * 1983-02-24 1984-09-04 Toshiba Corp Manufacture of semiconductor thin film
JPS60127755A (en) * 1983-12-15 1985-07-08 Sony Corp Manufacture of semiconductor device
JPS6360519A (en) * 1986-08-30 1988-03-16 Sony Corp Annealing method
JPS63253616A (en) * 1987-04-10 1988-10-20 Sony Corp Formation of semiconductor thin film
JPS63271916A (en) * 1987-04-28 1988-11-09 Sony Corp Formation of silicon thin film
JPH03114219A (en) * 1989-04-28 1991-05-15 Fujitsu Ltd Manufacture of substrate for semiconductor device
US6188085B1 (en) 1993-06-10 2001-02-13 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and a method of manufacturing thereof
JP2006024946A (en) * 2004-07-08 2006-01-26 Samsung Electronics Co Ltd Manufacturing method of polycrystalline silicon and manufacturing method of semiconductor element utilizing the same
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890759A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Stacking type semiconductor device
JPS5890760A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Lamination type semiconductor device
JPH0221142B2 (en) * 1981-11-25 1990-05-11 Mitsubishi Electric Corp
JPH0221143B2 (en) * 1981-11-25 1990-05-11 Mitsubishi Electric Corp
JPS59155121A (en) * 1983-02-24 1984-09-04 Toshiba Corp Manufacture of semiconductor thin film
JPS60127755A (en) * 1983-12-15 1985-07-08 Sony Corp Manufacture of semiconductor device
JPH0547987B2 (en) * 1983-12-15 1993-07-20 Sony Corp
JPS6360519A (en) * 1986-08-30 1988-03-16 Sony Corp Annealing method
JPS63253616A (en) * 1987-04-10 1988-10-20 Sony Corp Formation of semiconductor thin film
JPS63271916A (en) * 1987-04-28 1988-11-09 Sony Corp Formation of silicon thin film
JPH03114219A (en) * 1989-04-28 1991-05-15 Fujitsu Ltd Manufacture of substrate for semiconductor device
US6188085B1 (en) 1993-06-10 2001-02-13 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and a method of manufacturing thereof
US6255146B1 (en) 1993-06-10 2001-07-03 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and a method of manufacturing thereof
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7615721B2 (en) * 2000-09-13 2009-11-10 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7626137B2 (en) 2000-09-13 2009-12-01 Hamamatsu Photonics K.K. Laser cutting by forming a modified region within an object and generating fractures
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US7592238B2 (en) 2000-09-13 2009-09-22 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
JP2006024946A (en) * 2004-07-08 2006-01-26 Samsung Electronics Co Ltd Manufacturing method of polycrystalline silicon and manufacturing method of semiconductor element utilizing the same

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