JPS5671884A - Nonvolatile semiconductor storage device - Google Patents

Nonvolatile semiconductor storage device

Info

Publication number
JPS5671884A
JPS5671884A JP14791279A JP14791279A JPS5671884A JP S5671884 A JPS5671884 A JP S5671884A JP 14791279 A JP14791279 A JP 14791279A JP 14791279 A JP14791279 A JP 14791279A JP S5671884 A JPS5671884 A JP S5671884A
Authority
JP
Japan
Prior art keywords
storage
nonvolatile semiconductor
storage device
read
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14791279A
Other languages
Japanese (ja)
Inventor
Norihisa Kitagawa
Koji Asahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP14791279A priority Critical patent/JPS5671884A/en
Publication of JPS5671884A publication Critical patent/JPS5671884A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Abstract

PURPOSE:To increase the data storage characteristics, by judging the difference of the storage voltages opposite with each other of a pair of subcells by means of a differential type sense amplifier. CONSTITUTION:When the column selection transistors 20, 21 are ON into a read-in mode, the charge output stored in floating gates 10, 16 of submemory cells 2, 3 storing the logic states opposite each other forming the cell 1 to the storage state of the memory cell 1 is differentially sensed with a sense amplifier 24 with high sensitivity including transistors 25, 26 via Y lines 8, 11. Accordingly, the difference of storage charge of gates 10, 16 is more than the minimum sensitivity of the amplifier 24, then the read-in of the stored data can be made to obtain nonvolatile semiconductor storage device longer in the data storage time.
JP14791279A 1979-11-15 1979-11-15 Nonvolatile semiconductor storage device Pending JPS5671884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14791279A JPS5671884A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14791279A JPS5671884A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5671884A true JPS5671884A (en) 1981-06-15

Family

ID=15440910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14791279A Pending JPS5671884A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5671884A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005448A (en) * 2005-06-22 2007-01-11 Nec Electronics Corp Non-volatile semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384433A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp Semiconductor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384433A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp Semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005448A (en) * 2005-06-22 2007-01-11 Nec Electronics Corp Non-volatile semiconductor storage device

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