JPS5643743A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5643743A JPS5643743A JP11900979A JP11900979A JPS5643743A JP S5643743 A JPS5643743 A JP S5643743A JP 11900979 A JP11900979 A JP 11900979A JP 11900979 A JP11900979 A JP 11900979A JP S5643743 A JPS5643743 A JP S5643743A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- lower layer
- lowering
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Abstract
PURPOSE:To prevent the lowering of dielectric strength among wirings by a method wherein a lower layer wiring, whose surface has an insulating film, is formed on a substrate, a silicon hydroxide is applied on the whole surface and the surface is heated and a silicon oxide layer is made up, and an upper layer wiring is built up through an insulating film, in the formation of a multilayer wiring. CONSTITUTION:A metallic layer 1' for lower layer wiring in Al is formed on an Si substrate 2 on which a function element 6 is made up, an SiO2 film 7 is built up on the surface, patterning is conducted, and the lower layer Al wiring 1 is formed. A liquid 3 obtained by dissolving a silicon hydroxide such as Si(OH)4 or its low molecular polymer in ethanol, etc. is applied, heated and dehydrated and condensed, and an SiO2 layer 3 covering the lower layer wiring is made up. The upper layer Al wiring 5 is formed on the layer 3 through an interphase insulating layer 4 such as a phosphor silicate glass layer 4. Thus, the generation of cracks in the interphase insulating layer and the growth of hillocks formed on the lower layer wiring are prevented, and the lowering of dielectric strength can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11900979A JPS5643743A (en) | 1979-09-17 | 1979-09-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11900979A JPS5643743A (en) | 1979-09-17 | 1979-09-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5643743A true JPS5643743A (en) | 1981-04-22 |
Family
ID=14750725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11900979A Pending JPS5643743A (en) | 1979-09-17 | 1979-09-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5643743A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888212B2 (en) * | 1997-08-22 | 2005-05-03 | Micron Technology, Inc. | Method for trench isolation by selective deposition of low temperature oxide films |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4852185A (en) * | 1971-10-29 | 1973-07-21 | ||
JPS4933232A (en) * | 1972-07-28 | 1974-03-27 | ||
JPS5212588A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Production method of semi-conductor device |
-
1979
- 1979-09-17 JP JP11900979A patent/JPS5643743A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4852185A (en) * | 1971-10-29 | 1973-07-21 | ||
JPS4933232A (en) * | 1972-07-28 | 1974-03-27 | ||
JPS5212588A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Production method of semi-conductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888212B2 (en) * | 1997-08-22 | 2005-05-03 | Micron Technology, Inc. | Method for trench isolation by selective deposition of low temperature oxide films |
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