JPS5641186B2 - - Google Patents
Info
- Publication number
- JPS5641186B2 JPS5641186B2 JP2200872A JP2200872A JPS5641186B2 JP S5641186 B2 JPS5641186 B2 JP S5641186B2 JP 2200872 A JP2200872 A JP 2200872A JP 2200872 A JP2200872 A JP 2200872A JP S5641186 B2 JPS5641186 B2 JP S5641186B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200872A JPS5641186B2 (US20070149660A1-20070628-C00105.png) | 1972-03-03 | 1972-03-03 | |
| DE2310724A DE2310724C3 (de) | 1972-03-03 | 1973-03-03 | Phototransistor und Verfahren zu seiner Herstellung |
| US00338252A US3794891A (en) | 1972-03-03 | 1973-03-05 | High speed response phototransistor and method of making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200872A JPS5641186B2 (US20070149660A1-20070628-C00105.png) | 1972-03-03 | 1972-03-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4942294A JPS4942294A (US20070149660A1-20070628-C00105.png) | 1974-04-20 |
| JPS5641186B2 true JPS5641186B2 (US20070149660A1-20070628-C00105.png) | 1981-09-26 |
Family
ID=12070962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2200872A Expired JPS5641186B2 (US20070149660A1-20070628-C00105.png) | 1972-03-03 | 1972-03-03 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3794891A (US20070149660A1-20070628-C00105.png) |
| JP (1) | JPS5641186B2 (US20070149660A1-20070628-C00105.png) |
| DE (1) | DE2310724C3 (US20070149660A1-20070628-C00105.png) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3958264A (en) * | 1974-06-24 | 1976-05-18 | International Business Machines Corporation | Space-charge-limited phototransistor |
| JPS5814060B2 (ja) * | 1978-03-27 | 1983-03-17 | 青木 勇 | 鉄心插入機 |
| US4720642A (en) * | 1983-03-02 | 1988-01-19 | Marks Alvin M | Femto Diode and applications |
| US4212023A (en) * | 1978-11-30 | 1980-07-08 | General Electric Company | Bilateral phototransistor |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| DE2922301C2 (de) * | 1979-05-31 | 1985-04-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung |
| US4698653A (en) * | 1979-10-09 | 1987-10-06 | Cardwell Jr Walter T | Semiconductor devices controlled by depletion regions |
| US4638344A (en) * | 1979-10-09 | 1987-01-20 | Cardwell Jr Walter T | Junction field-effect transistor controlled by merged depletion regions |
| NL8003906A (nl) * | 1980-07-07 | 1982-02-01 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
| JPS59125672A (ja) * | 1983-01-07 | 1984-07-20 | Toshiba Corp | 半導体装置 |
| NL8700370A (nl) * | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
| GB2201543A (en) * | 1987-02-25 | 1988-09-01 | Philips Electronic Associated | A photosensitive device |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
| JP2578791Y2 (ja) * | 1991-09-11 | 1998-08-13 | 勇 青木 | 鉄心挿入機 |
| JPH0575159A (ja) * | 1991-09-18 | 1993-03-26 | Nec Corp | 光半導体装置 |
| TWI437222B (zh) * | 2009-09-07 | 2014-05-11 | Univ Nat Central | 用於測量生物分子之螢光檢測系統、方法及裝置 |
| ITTO20110210A1 (it) * | 2011-03-09 | 2012-09-10 | Francesco Agus | Cella fotovoltaica con giunzione p-n distribuita in modo spaziale nel substrato di semiconduttore |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3222530A (en) * | 1961-06-07 | 1965-12-07 | Philco Corp | Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers |
| NL296170A (US20070149660A1-20070628-C00105.png) * | 1962-10-04 | |||
| NL6709192A (US20070149660A1-20070628-C00105.png) * | 1967-07-01 | 1969-01-03 | ||
| US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
| JPS4944530B1 (US20070149660A1-20070628-C00105.png) * | 1970-01-23 | 1974-11-28 | ||
| US3714526A (en) * | 1971-02-19 | 1973-01-30 | Nasa | Phototransistor |
-
1972
- 1972-03-03 JP JP2200872A patent/JPS5641186B2/ja not_active Expired
-
1973
- 1973-03-03 DE DE2310724A patent/DE2310724C3/de not_active Expired
- 1973-03-05 US US00338252A patent/US3794891A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3794891A (en) | 1974-02-26 |
| DE2310724C3 (de) | 1983-11-10 |
| DE2310724A1 (de) | 1973-09-13 |
| JPS4942294A (US20070149660A1-20070628-C00105.png) | 1974-04-20 |
| DE2310724B2 (de) | 1978-04-20 |
