JPS5641173B2 - - Google Patents
Info
- Publication number
- JPS5641173B2 JPS5641173B2 JP10674276A JP10674276A JPS5641173B2 JP S5641173 B2 JPS5641173 B2 JP S5641173B2 JP 10674276 A JP10674276 A JP 10674276A JP 10674276 A JP10674276 A JP 10674276A JP S5641173 B2 JPS5641173 B2 JP S5641173B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10674276A JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10674276A JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5333050A JPS5333050A (en) | 1978-03-28 |
| JPS5641173B2 true JPS5641173B2 (US08063081-20111122-C00044.png) | 1981-09-26 |
Family
ID=14441363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10674276A Granted JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5333050A (US08063081-20111122-C00044.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190030737A (ko) | 2017-02-15 | 2019-03-22 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자의 제조 방법 및 질화물 반도체 자외선 발광 소자 |
| US11637221B2 (en) | 2017-11-09 | 2023-04-25 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562698B2 (en) | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
| WO2000075983A1 (en) * | 1999-06-08 | 2000-12-14 | Kulicke & Soffa Investments, Inc. | A method for dicing wafers with laser scribing |
| US6555447B2 (en) | 1999-06-08 | 2003-04-29 | Kulicke & Soffa Investments, Inc. | Method for laser scribing of wafers |
| US6420245B1 (en) | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
| JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| ES2285634T3 (es) | 2002-03-12 | 2007-11-16 | Hamamatsu Photonics K. K. | Metodo para dividir un siustrato. |
| TWI520269B (zh) | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
-
1976
- 1976-09-08 JP JP10674276A patent/JPS5333050A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190030737A (ko) | 2017-02-15 | 2019-03-22 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자의 제조 방법 및 질화물 반도체 자외선 발광 소자 |
| US11637221B2 (en) | 2017-11-09 | 2023-04-25 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5333050A (en) | 1978-03-28 |
