JPS5640309A - Extra-high frequency transistor amplifying unit - Google Patents
Extra-high frequency transistor amplifying unitInfo
- Publication number
- JPS5640309A JPS5640309A JP11647879A JP11647879A JPS5640309A JP S5640309 A JPS5640309 A JP S5640309A JP 11647879 A JP11647879 A JP 11647879A JP 11647879 A JP11647879 A JP 11647879A JP S5640309 A JPS5640309 A JP S5640309A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- matching circuit
- varactor diode
- microwave
- gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To simplify constitution and make a unit small-size, by incorporating a variable impedance element into the matching circuit of the transistor and by controlling the impedance matching circuit to compensate the nonlinear property of the transistor. CONSTITUTION:The microwave signal which was subjected to amplitude modulation is input to input terminal 7 of the amplifier, and a part of this signal is taken out by directional coupler 8 and is subjected to envelope detection amplification by detecting circuit 9. Most of the microwave signal is sent to FET1 through capacitor 11 for DC cut, varactor diode 6, and impedance matching circuit 2. Further, the detected and amplified signal is superposed to DC backward bias voltage VB and is applied to varactor diode 6. Then, varactor diode 6 is controlled by amplitude change of microwave input power, and only the gain is lowered in a small signal level, and the gain in the high output level is held, so that linearity of the whole can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11647879A JPS5640309A (en) | 1979-09-11 | 1979-09-11 | Extra-high frequency transistor amplifying unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11647879A JPS5640309A (en) | 1979-09-11 | 1979-09-11 | Extra-high frequency transistor amplifying unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5640309A true JPS5640309A (en) | 1981-04-16 |
Family
ID=14688092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11647879A Pending JPS5640309A (en) | 1979-09-11 | 1979-09-11 | Extra-high frequency transistor amplifying unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5640309A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03274902A (en) * | 1990-03-26 | 1991-12-05 | Mitsubishi Electric Corp | Semiconductor device |
US6166604A (en) * | 1998-06-18 | 2000-12-26 | Nec Corporation | Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic |
KR100977423B1 (en) | 2006-11-15 | 2010-08-24 | 닛본 덴끼 가부시끼가이샤 | Amplifier |
JP2012100037A (en) * | 2010-11-01 | 2012-05-24 | Fujitsu Ltd | Phase compensation circuit for amplifier, and amplification circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624534A (en) * | 1969-02-20 | 1971-11-30 | English Electric Valve Co Ltd | A uhf klystron amplifier having a substantially linear input/output characteristic |
-
1979
- 1979-09-11 JP JP11647879A patent/JPS5640309A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624534A (en) * | 1969-02-20 | 1971-11-30 | English Electric Valve Co Ltd | A uhf klystron amplifier having a substantially linear input/output characteristic |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03274902A (en) * | 1990-03-26 | 1991-12-05 | Mitsubishi Electric Corp | Semiconductor device |
US6166604A (en) * | 1998-06-18 | 2000-12-26 | Nec Corporation | Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic |
KR100977423B1 (en) | 2006-11-15 | 2010-08-24 | 닛본 덴끼 가부시끼가이샤 | Amplifier |
JP2012100037A (en) * | 2010-11-01 | 2012-05-24 | Fujitsu Ltd | Phase compensation circuit for amplifier, and amplification circuit |
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