JPS5627937A - Method of forming silicon dioxide layer - Google Patents
Method of forming silicon dioxide layerInfo
- Publication number
- JPS5627937A JPS5627937A JP8150580A JP8150580A JPS5627937A JP S5627937 A JPS5627937 A JP S5627937A JP 8150580 A JP8150580 A JP 8150580A JP 8150580 A JP8150580 A JP 8150580A JP S5627937 A JPS5627937 A JP S5627937A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- dioxide layer
- forming silicon
- forming
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/066,965 US4239811A (en) | 1979-08-16 | 1979-08-16 | Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627937A true JPS5627937A (en) | 1981-03-18 |
JPS6341214B2 JPS6341214B2 (ja) | 1988-08-16 |
Family
ID=22072865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8150580A Granted JPS5627937A (en) | 1979-08-16 | 1980-06-18 | Method of forming silicon dioxide layer |
Country Status (4)
Country | Link |
---|---|
US (1) | US4239811A (ja) |
JP (1) | JPS5627937A (ja) |
CA (1) | CA1166128A (ja) |
IT (1) | IT1150033B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018525524A (ja) * | 2015-08-10 | 2018-09-06 | ルクセンブルク インスティトゥート オブ サイエンス アンド テクノロジー(リスト) | 室温での原子層堆積によって生成されたSiO2薄膜 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4419385A (en) * | 1981-09-24 | 1983-12-06 | Hughes Aircraft Company | Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby |
US4489103A (en) * | 1983-09-16 | 1984-12-18 | Rca Corporation | SIPOS Deposition method |
US4510172A (en) * | 1984-05-29 | 1985-04-09 | International Business Machines Corporation | Technique for thin insulator growth |
US4772486A (en) * | 1985-02-18 | 1988-09-20 | Canon Kabushiki Kaisha | Process for forming a deposited film |
JPH0817159B2 (ja) * | 1985-08-15 | 1996-02-21 | キヤノン株式会社 | 堆積膜の形成方法 |
JP2635021B2 (ja) * | 1985-09-26 | 1997-07-30 | 宣夫 御子柴 | 堆積膜形成法及びこれに用いる装置 |
CA1315614C (en) * | 1985-10-23 | 1993-04-06 | Shunichi Ishihara | Method for forming deposited film |
US4812325A (en) * | 1985-10-23 | 1989-03-14 | Canon Kabushiki Kaisha | Method for forming a deposited film |
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
JPS62136871A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光センサ−、その製造方法及びその製造装置 |
JPH0645885B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645886B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645888B2 (ja) * | 1985-12-17 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645890B2 (ja) * | 1985-12-18 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPS62142778A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | 堆積膜形成法 |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0647730B2 (ja) * | 1985-12-25 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0651909B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
JPH0651908B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
US5322568A (en) * | 1985-12-28 | 1994-06-21 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
JPH084070B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
US5037514A (en) * | 1986-01-06 | 1991-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Silicon oxide depositing method |
US5366554A (en) * | 1986-01-14 | 1994-11-22 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US4800173A (en) * | 1986-02-20 | 1989-01-24 | Canon Kabushiki Kaisha | Process for preparing Si or Ge epitaxial film using fluorine oxidant |
US4810673A (en) * | 1986-09-18 | 1989-03-07 | Texas Instruments Incorporated | Oxide deposition method |
US4834023A (en) * | 1986-12-19 | 1989-05-30 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
US4900591A (en) * | 1988-01-20 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the deposition of high quality silicon dioxide at low temperature |
US5059550A (en) * | 1988-10-25 | 1991-10-22 | Sharp Kabushiki Kaisha | Method of forming an element isolating portion in a semiconductor device |
US5068124A (en) * | 1989-11-17 | 1991-11-26 | International Business Machines Corporation | Method for depositing high quality silicon dioxide by pecvd |
US5310583A (en) * | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
US5820923A (en) * | 1992-11-02 | 1998-10-13 | Dow Corning Corporation | Curing silica precursors by exposure to nitrous oxide |
US5658612A (en) * | 1995-09-29 | 1997-08-19 | Osram Sylvania Inc. | Method for making a tantala/silica interference filter on the surface of a tungsten-halogen incandescent lamp |
US6169026B1 (en) | 1995-11-20 | 2001-01-02 | Hyundai Electronics Industries Co., Ltd. | Method for planarization of semiconductor device including pumping out dopants from planarization layer separately from flowing said layer |
FR2758318B1 (fr) * | 1997-01-15 | 1999-02-05 | Air Liquide | Procede et installation d'elaboration d'un melange gazeux comportant un gaz porteur, un gaz oxydant et un silane |
US6472076B1 (en) * | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US20030104707A1 (en) * | 2001-11-16 | 2003-06-05 | Yoshihide Senzaki | System and method for improved thin dielectric films |
TW200424343A (en) * | 2002-09-05 | 2004-11-16 | Asml Us Inc | Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition |
US7199061B2 (en) * | 2003-04-21 | 2007-04-03 | Applied Materials, Inc. | Pecvd silicon oxide thin film deposition |
JP2014011234A (ja) * | 2012-06-28 | 2014-01-20 | Tokyo Electron Ltd | シリコン酸化膜の形成方法およびその形成装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3331716A (en) * | 1962-06-04 | 1967-07-18 | Philips Corp | Method of manufacturing a semiconductor device by vapor-deposition |
US3887726A (en) * | 1973-06-29 | 1975-06-03 | Ibm | Method of chemical vapor deposition to provide silicon dioxide films with reduced surface state charge on semiconductor substrates |
DE2409910C3 (de) | 1974-03-01 | 1979-03-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer Halbleiteranordnung |
US4002512A (en) * | 1974-09-16 | 1977-01-11 | Western Electric Company, Inc. | Method of forming silicon dioxide |
-
1979
- 1979-08-16 US US06/066,965 patent/US4239811A/en not_active Expired - Lifetime
-
1980
- 1980-06-16 CA CA000354063A patent/CA1166128A/en not_active Expired
- 1980-06-18 JP JP8150580A patent/JPS5627937A/ja active Granted
- 1980-07-25 IT IT23689/80A patent/IT1150033B/it active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018525524A (ja) * | 2015-08-10 | 2018-09-06 | ルクセンブルク インスティトゥート オブ サイエンス アンド テクノロジー(リスト) | 室温での原子層堆積によって生成されたSiO2薄膜 |
Also Published As
Publication number | Publication date |
---|---|
US4239811A (en) | 1980-12-16 |
IT8023689A0 (it) | 1980-07-25 |
CA1166128A (en) | 1984-04-24 |
JPS6341214B2 (ja) | 1988-08-16 |
IT1150033B (it) | 1986-12-10 |
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