New! Search for patents from more than 100 countries including Australia, Brazil, Sweden and more

JPS5627137A - Inorganic photoresist material - Google Patents

Inorganic photoresist material

Info

Publication number
JPS5627137A
JPS5627137A JP10305079A JP10305079A JPS5627137A JP S5627137 A JPS5627137 A JP S5627137A JP 10305079 A JP10305079 A JP 10305079A JP 10305079 A JP10305079 A JP 10305079A JP S5627137 A JPS5627137 A JP S5627137A
Authority
JP
Japan
Prior art keywords
layer
ag
se
substance
portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10305079A
Inventor
Tomoko Kuki
Yoshihiko Mizushima
Osamu Ochi
Akitsu Takeda
Akira Yoshikawa
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP10305079A priority Critical patent/JPS5627137A/en
Publication of JPS5627137A publication Critical patent/JPS5627137A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/705Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems

Abstract

PURPOSE:To obtain a pattern on a substance to be processed in accordance with an exposure pattern with precision by allowing halogen to be contained in the 2nd layer side of the Se-base 1st layer and forming the 2nd layer made of Ag or contg. Ag. CONSTITUTION:On substance 3 such as semiconductor to be processed the Se-base 1st layer 1 of Se70Ge30 or the like is formed by vacuum deposition or sputtering, and at the end of the formation halide is added to the Se-base material to form surface layer 5 contg. <= several mol% Cl, Br or I by vacuum deposition or other method. On layer 1 having layer 5 the 2nd layer 2 made of Ag or Ag chalcogenide or halide is formed to manufacture an inorg. photoresist material. This material is imagewise exposed L and developed. The exposed portion is made insoluble, and portion 1a of layer 1 and portion 2a of layer 2 of the unexposed portion are dissolved and removed to disclose substance 3 as portion 3a. Thus, Se-contg. layer 4 of the exposed portion remains to give precise pattern 3a on substance 3.
JP10305079A 1979-08-13 1979-08-13 Inorganic photoresist material Pending JPS5627137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10305079A JPS5627137A (en) 1979-08-13 1979-08-13 Inorganic photoresist material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10305079A JPS5627137A (en) 1979-08-13 1979-08-13 Inorganic photoresist material

Publications (1)

Publication Number Publication Date
JPS5627137A true JPS5627137A (en) 1981-03-16

Family

ID=14343836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10305079A Pending JPS5627137A (en) 1979-08-13 1979-08-13 Inorganic photoresist material

Country Status (1)

Country Link
JP (1) JPS5627137A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368939B1 (en) * 1997-04-18 2002-04-09 Nec Corporation Multilevel interconnection structure having an air gap between interconnects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368939B1 (en) * 1997-04-18 2002-04-09 Nec Corporation Multilevel interconnection structure having an air gap between interconnects

Similar Documents

Publication Publication Date Title
JPS61292643A (en) Photomask
JPS56126916A (en) Manufacture of semiconductor device
JPS55105326A (en) Manufacturing method of electrode of semiconductor device
JPS6358446A (en) Pattern forming method
JPS5446479A (en) Negative plate for photo mask
JPS5832430A (en) Manufacture of semiconductor device
JPS55126480A (en) Recording member
JPS52139375A (en) Mask for x-ray exposure
JPS60238829A (en) Formation of pattern
JPS57106128A (en) Forming method for pattern
JPS5738189A (en) Recording member
JPS57202535A (en) Formation of negative resist pattern
JPH03196041A (en) Method for correcting mask and mask
JPS623246A (en) Photosensitive material containing nonphotosensitive silver salt
JPS57100428A (en) Method for photomechanical process
JPH03222409A (en) Manufacture of semiconductor device
JPH02247647A (en) Production of phase shift mask
JPS5953837A (en) Pattern forming material and pattern forming method
JPS5833246A (en) Formation of positive type resist pattern
JPS608802A (en) Manufacture of blazed grating
JPS60135949A (en) Production for optical formed article
JPS565538A (en) Photographic mordanting layer
JPS58154845A (en) Formation of color picture
JPS5494881A (en) Exposure method
JPH01135606A (en) Mold for forming optical memory board