JPS5623771A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5623771A
JPS5623771A JP9730179A JP9730179A JPS5623771A JP S5623771 A JPS5623771 A JP S5623771A JP 9730179 A JP9730179 A JP 9730179A JP 9730179 A JP9730179 A JP 9730179A JP S5623771 A JPS5623771 A JP S5623771A
Authority
JP
Japan
Prior art keywords
capacitance
region
film
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9730179A
Other languages
English (en)
Inventor
Yoshio Sakai
Mitsumasa Koyanagi
Hideo Sunami
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9730179A priority Critical patent/JPS5623771A/ja
Priority to US06/172,378 priority patent/US4355374A/en
Priority to DE3029125A priority patent/DE3029125C2/de
Publication of JPS5623771A publication Critical patent/JPS5623771A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9730179A 1979-08-01 1979-08-01 Semiconductor memory Pending JPS5623771A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9730179A JPS5623771A (en) 1979-08-01 1979-08-01 Semiconductor memory
US06/172,378 US4355374A (en) 1979-08-01 1980-07-24 Semiconductor memory device
DE3029125A DE3029125C2 (de) 1979-08-01 1980-07-31 Halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9730179A JPS5623771A (en) 1979-08-01 1979-08-01 Semiconductor memory

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59121726A Division JPS6035567A (ja) 1984-06-15 1984-06-15 半導体メモリ
JP59121725A Division JPS6035566A (ja) 1984-06-15 1984-06-15 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS5623771A true JPS5623771A (en) 1981-03-06

Family

ID=14188658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9730179A Pending JPS5623771A (en) 1979-08-01 1979-08-01 Semiconductor memory

Country Status (3)

Country Link
US (1) US4355374A (ja)
JP (1) JPS5623771A (ja)
DE (1) DE3029125C2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234068A (ja) * 1985-04-10 1986-10-18 Nec Corp バイポ−ラｒａｍ
JPS62140458A (ja) * 1985-12-13 1987-06-24 Mitsubishi Electric Corp 半導体集積回路装置
JPS62144352A (ja) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp 半導体集積回路装置

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
US4458215A (en) * 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
JPS602782B2 (ja) * 1982-06-30 1985-01-23 富士通株式会社 半導体記憶装置
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
JPS602784B2 (ja) * 1982-12-20 1985-01-23 富士通株式会社 半導体記憶装置
US5244825A (en) * 1983-02-23 1993-09-14 Texas Instruments Incorporated DRAM process with improved poly-to-poly capacitor
FR2554954B1 (fr) * 1983-11-11 1989-05-12 Hitachi Ltd Dispositif de memoire a semi-conducteurs
FR2577339B1 (fr) * 1985-02-12 1991-05-10 Eurotechnique Sa Memoire dynamique en circuit integre
FR2577338B1 (fr) * 1985-02-12 1987-03-06 Eurotechnique Sa Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
JPS61224350A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体記憶装置
ATE58027T1 (de) * 1985-08-21 1990-11-15 Siemens Ag Bipolare speicherzelle mit externer kapazitaet.
JPS6260256A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 半導体記憶装置及びその製造方法
JPH0736437B2 (ja) * 1985-11-29 1995-04-19 株式会社日立製作所 半導体メモリの製造方法
US5098192A (en) * 1986-04-30 1992-03-24 Texas Instruments Incorporated DRAM with improved poly-to-poly capacitor
US4922312A (en) * 1986-04-30 1990-05-01 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
JP2634163B2 (ja) * 1987-02-19 1997-07-23 三菱電機株式会社 半導体記憶装置
KR100212098B1 (ko) * 1987-09-19 1999-08-02 가나이 쓰도무 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
US5734188A (en) * 1987-09-19 1998-03-31 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JPH0666437B2 (ja) * 1987-11-17 1994-08-24 富士通株式会社 半導体記憶装置及びその製造方法
US20010008288A1 (en) * 1988-01-08 2001-07-19 Hitachi, Ltd. Semiconductor integrated circuit device having memory cells
US5374576A (en) * 1988-12-21 1994-12-20 Hitachi, Ltd. Method of fabricating stacked capacitor cell memory devices
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置
US5079670A (en) * 1988-05-03 1992-01-07 Texas Instruments Incorporated Metal plate capacitor and method for making the same
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
US5334547A (en) * 1988-12-27 1994-08-02 Nec Corporation Method of manufacturing a semiconductor memory having an increased cell capacitance in a restricted cell area
US5049958A (en) * 1989-01-27 1991-09-17 Texas Instruments Incorporated Stacked capacitors for VLSI semiconductor devices
US5006481A (en) * 1989-11-30 1991-04-09 Sgs-Thomson Microelectronics, Inc. Method of making a stacked capacitor DRAM cell
JPH0496270A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法
KR0174313B1 (ko) * 1994-07-27 1999-02-01 스기야마 가즈히꼬 Mos 커패시터와 그 제조방법
DE102004038528A1 (de) * 2004-08-07 2006-03-16 Atmel Germany Gmbh Halbleiterstruktur
KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
US4164751A (en) * 1976-11-10 1979-08-14 Texas Instruments Incorporated High capacity dynamic ram cell
DE2730798A1 (de) * 1977-07-07 1979-01-25 Siemens Ag Verfahren zum herstellen einer aus einem feldeffekttransistor mit isolierter steuerelektrode und einem kondensator integrierten halbleiterspeicherzelle

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234068A (ja) * 1985-04-10 1986-10-18 Nec Corp バイポ−ラｒａｍ
JPS62140458A (ja) * 1985-12-13 1987-06-24 Mitsubishi Electric Corp 半導体集積回路装置
JPS62144352A (ja) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
DE3029125C2 (de) 1982-07-29
DE3029125A1 (de) 1981-02-12
US4355374A (en) 1982-10-19

Similar Documents

Publication Publication Date Title
JPS5623771A (en) Semiconductor memory
US4566175A (en) Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations
US4538166A (en) Semiconductor memory device
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5623781A (en) Semiconductor device
JPS5559759A (en) Semiconductor device
JPS5691470A (en) Semiconductor
JPS5587481A (en) Mis type semiconductor device
JPS5572069A (en) Semiconductor device
JPS5723259A (en) Complementary type mos semiconductor device
JPS5764965A (en) Semiconductor device
JPS5588378A (en) Semiconductor device
JPS5499578A (en) Field effect transistor
JPS54139490A (en) Semiconductor memory unit
JPS6473674A (en) Mos-type field-effect transistor
JPS54143076A (en) Semiconductor device and its manufacture
JPS5673468A (en) Mos type semiconductor device
JPS55102274A (en) Insulated gate field effect transistor
JPS5518072A (en) Mos semiconductor device
JPS5721865A (en) Manufacture of semiconductor device
JPS54124688A (en) Insulating gate field effect transistor
JPS5753958A (ja) Handotaisochi
JPS54100270A (en) Semiconductor device
JPS57199251A (en) Semiconductor device