JPS5623276A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5623276A
JPS5623276A JP9820179A JP9820179A JPS5623276A JP S5623276 A JPS5623276 A JP S5623276A JP 9820179 A JP9820179 A JP 9820179A JP 9820179 A JP9820179 A JP 9820179A JP S5623276 A JPS5623276 A JP S5623276A
Authority
JP
Japan
Prior art keywords
etching
essentially
ccl
etchant
carbon tetrachloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9820179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS572787B2 (https=
Inventor
Chuichi Takada
Kazuo Tokitomo
Hitoshi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9820179A priority Critical patent/JPS5623276A/ja
Priority to DE8080302564T priority patent/DE3071299D1/de
Priority to EP80302564A priority patent/EP0023429B1/en
Priority to CA000357204A priority patent/CA1136525A/en
Priority to IE1592/80A priority patent/IE50996B1/en
Priority to US06/174,140 priority patent/US4350563A/en
Publication of JPS5623276A publication Critical patent/JPS5623276A/ja
Publication of JPS572787B2 publication Critical patent/JPS572787B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP9820179A 1979-07-31 1979-07-31 Dry etching method Granted JPS5623276A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9820179A JPS5623276A (en) 1979-07-31 1979-07-31 Dry etching method
DE8080302564T DE3071299D1 (en) 1979-07-31 1980-07-28 Dry etching of metal film
EP80302564A EP0023429B1 (en) 1979-07-31 1980-07-28 Dry etching of metal film
CA000357204A CA1136525A (en) 1979-07-31 1980-07-29 Dry etching of metal film
IE1592/80A IE50996B1 (en) 1979-07-31 1980-07-30 Dry etching of metal film
US06/174,140 US4350563A (en) 1979-07-31 1980-07-31 Dry etching of metal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9820179A JPS5623276A (en) 1979-07-31 1979-07-31 Dry etching method

Publications (2)

Publication Number Publication Date
JPS5623276A true JPS5623276A (en) 1981-03-05
JPS572787B2 JPS572787B2 (https=) 1982-01-18

Family

ID=14213381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9820179A Granted JPS5623276A (en) 1979-07-31 1979-07-31 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5623276A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891171A (ja) * 1981-11-27 1983-05-31 Kokusai Electric Co Ltd アルミニウムおよびアルミニウム合金のプラズマエツチング方法
JPS58213877A (ja) * 1982-06-05 1983-12-12 Anelva Corp アルミニウムのドライエツチング方法
CN112103167A (zh) * 2020-09-28 2020-12-18 上海华虹宏力半导体制造有限公司 干法刻蚀工艺方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891171A (ja) * 1981-11-27 1983-05-31 Kokusai Electric Co Ltd アルミニウムおよびアルミニウム合金のプラズマエツチング方法
JPS58213877A (ja) * 1982-06-05 1983-12-12 Anelva Corp アルミニウムのドライエツチング方法
CN112103167A (zh) * 2020-09-28 2020-12-18 上海华虹宏力半导体制造有限公司 干法刻蚀工艺方法

Also Published As

Publication number Publication date
JPS572787B2 (https=) 1982-01-18

Similar Documents

Publication Publication Date Title
JPS56158873A (en) Dry etching method
JPS5684476A (en) Etching method of gas plasma
JPS57170534A (en) Dry etching method for aluminum and aluminum alloy
JPS5240978A (en) Process for production of semiconductor device
JPS53112065A (en) Removing method of high molecular compound
JPS5623276A (en) Dry etching method
JPS53110374A (en) Manufacture of semiconductor device
JPS5469090A (en) Manufacture of semiconductor device
JPS5515290A (en) Manufacturing method of semiconductor device
JPS56169776A (en) Selective dry etching method
JPS5591842A (en) Manufacture of semiconductor device
JPS54101273A (en) Manufacture for semiconductor device
JPS5591138A (en) Die forming of semiconductor device
JPS5339058A (en) Production of semiconductor device
JPS5598827A (en) Manufacture of electrode of semiconductor device
JPS5586122A (en) Semiconductor device
JPS5496363A (en) Electrode forming method for semiconductor device
JPS55134173A (en) Etching method for aluminum or aluminum base alloy
JPS5384684A (en) Plasma etching device
JPS5585670A (en) Aluminum and aluminum alloy etching method
JPS5625972A (en) Etching treatment by plasma
JPS542670A (en) Plasma etching method
JPS5658972A (en) Dry etching method
JPS51124379A (en) Plasma etching method
JPS5396673A (en) Gas plasma etching method for sio2 film