JPS5612035B2 - - Google Patents

Info

Publication number
JPS5612035B2
JPS5612035B2 JP896779A JP896779A JPS5612035B2 JP S5612035 B2 JPS5612035 B2 JP S5612035B2 JP 896779 A JP896779 A JP 896779A JP 896779 A JP896779 A JP 896779A JP S5612035 B2 JPS5612035 B2 JP S5612035B2
Authority
JP
Japan
Prior art keywords
uniform
dielectric
dielectric material
mic
constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP896779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55102292A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11707446&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5612035(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Priority to JP896779A priority Critical patent/JPS55102292A/ja
Priority to DE8080100457T priority patent/DE3067797D1/de
Priority to EP80100457A priority patent/EP0014002B2/en
Priority to AT80100457T priority patent/ATE7486T1/de
Publication of JPS55102292A publication Critical patent/JPS55102292A/ja
Publication of JPS5612035B2 publication Critical patent/JPS5612035B2/ja
Priority to US06/258,355 priority patent/US4353047A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Amplifiers (AREA)
JP896779A 1979-01-29 1979-01-29 High frequency high output transistor amplifier Granted JPS55102292A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP896779A JPS55102292A (en) 1979-01-29 1979-01-29 High frequency high output transistor amplifier
DE8080100457T DE3067797D1 (en) 1979-01-29 1980-01-29 (1-x)bao.xtio2 system dielectric material particulary for use in a microwave device
EP80100457A EP0014002B2 (en) 1979-01-29 1980-01-29 (1-x)BaO.xTiO2 System dielectric material for use in a microwave device
AT80100457T ATE7486T1 (de) 1979-01-29 1980-01-29 Dielektrisches material des systems (1x)bao.xtio2 insbesondere zur verwendung in einer mikrowellenvorrichtung.
US06/258,355 US4353047A (en) 1979-01-29 1981-04-28 (1-x)BaO.xTiO2 System dielectric material for use in a microwave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP896779A JPS55102292A (en) 1979-01-29 1979-01-29 High frequency high output transistor amplifier

Publications (2)

Publication Number Publication Date
JPS55102292A JPS55102292A (en) 1980-08-05
JPS5612035B2 true JPS5612035B2 (https=) 1981-03-18

Family

ID=11707446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP896779A Granted JPS55102292A (en) 1979-01-29 1979-01-29 High frequency high output transistor amplifier

Country Status (5)

Country Link
US (1) US4353047A (https=)
EP (1) EP0014002B2 (https=)
JP (1) JPS55102292A (https=)
AT (1) ATE7486T1 (https=)
DE (1) DE3067797D1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442220A (en) * 1981-04-15 1984-04-10 Matsushita Electric Industrial Co., Ltd. Dielectric ceramics
JPS5873908A (ja) * 1981-10-28 1983-05-04 ティーディーケイ株式会社 高周波用誘電体磁器組成物
JPS6022451B2 (ja) * 1981-12-17 1985-06-01 三菱鉱業セメント株式会社 誘電体磁器組成物
JPS58206003A (ja) * 1982-05-26 1983-12-01 日本放送協会 低損失マイクロ波誘電材料
JPS5918160A (ja) * 1982-07-20 1984-01-30 三菱鉱業セメント株式会社 誘電体磁器組成物
JPS609220U (ja) * 1983-06-28 1985-01-22 株式会社村田製作所 Ｌｃ複合部品
JPS6122656A (ja) * 1984-07-10 1986-01-31 Nec Corp 発振用トランジスタ素子
FR2568722B1 (fr) * 1984-08-03 1987-10-23 Thomson Csf Substrat en ceramique dielectrique et procede d'obtention
US5223462A (en) * 1985-03-18 1993-06-29 Kyocera Corporation Dielectric ceramic composition
JPS622407A (ja) * 1985-06-27 1987-01-08 株式会社東芝 回路基板
US5027089A (en) * 1988-06-10 1991-06-25 Adc Telecommunications, Inc. High frequency noise bypassing
USH987H (en) 1989-06-12 1991-11-05 Temperature stable ceramic dielectric compositions
US5027082A (en) * 1990-05-01 1991-06-25 Microwave Modules & Devices, Inc. Solid state RF power amplifier having improved efficiency and reduced distortion
JPH0583017A (ja) * 1991-09-24 1993-04-02 Mitsubishi Electric Corp マイクロ波集積回路装置
US5389904A (en) * 1992-09-11 1995-02-14 Industrial Technology Research Institute, Taiwan, R.O.C. Surface-mountable, frequency selective microwave IC package
JPH06333426A (ja) * 1993-05-21 1994-12-02 Murata Mfg Co Ltd 高周波用誘電体磁器組成物
JPH07297609A (ja) * 1994-04-28 1995-11-10 Nec Yamagata Ltd 半導体装置
TW277053B (https=) * 1994-06-02 1996-06-01 At & T Corp
US6034015A (en) * 1997-05-14 2000-03-07 Georgia Tech Research Corporation Ceramic compositions for microwave wireless communication
US6201454B1 (en) * 1999-03-30 2001-03-13 The Whitaker Corporation Compensation structure for a bond wire at high frequency operation
JP5036105B2 (ja) * 2001-06-07 2012-09-26 三菱電機株式会社 高周波半導体集積回路
US20090258247A1 (en) * 2008-04-11 2009-10-15 Siemens Power Generation, Inc. Anisotropic Soft Ceramics for Abradable Coatings in Gas Turbines
US6903447B2 (en) * 2002-05-09 2005-06-07 M/A-Com, Inc. Apparatus, methods and articles of manufacture for packaging an integrated circuit with internal matching
US6828658B2 (en) * 2002-05-09 2004-12-07 M/A-Com, Inc. Package for integrated circuit with internal matching
US20040212025A1 (en) * 2003-04-28 2004-10-28 Wilman Tsai High k oxide
JP2007300159A (ja) * 2006-04-27 2007-11-15 Sharp Corp 回路ユニット、電源バイアス回路、ｌｎｂ、およびトランスミッタ
JP4982596B2 (ja) * 2009-09-08 2012-07-25 株式会社東芝 モジュールの接続構造
US8685545B2 (en) 2012-02-13 2014-04-01 Siemens Aktiengesellschaft Thermal barrier coating system with porous tungsten bronze structured underlayer
JP6430694B2 (ja) * 2013-08-23 2018-11-28 住友電工デバイス・イノベーション株式会社 半導体装置
CN104149420A (zh) * 2014-05-12 2014-11-19 华东理工大学 非烧结成型高性能聚四氟乙烯高频通讯用覆铜箔板的制备
CN109265163A (zh) * 2018-09-29 2019-01-25 苏州旷视智能科技有限公司 陶瓷电容器的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231805A (https=) * 1957-10-03
US3775142A (en) * 1971-01-26 1973-11-27 Solid State Dielectrics Inc Improved ceramic compositions for high stability capacitors
US3718730A (en) * 1971-06-23 1973-02-27 Us Army Method of treating barium titanate
DE2158952B1 (de) * 1971-11-27 1973-03-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Keramisches Dielektrikum
US4026811A (en) * 1973-08-02 1977-05-31 Raytheon Company Microwave dielectrics
US3938064A (en) * 1973-09-04 1976-02-10 Bell Telephone Laboratories, Incorporated Devices using low loss dielectric material
US4004256A (en) * 1974-06-10 1977-01-18 Duncan David M High frequency amplifier stage with input reference translation and output matching
JPS5233453A (en) * 1975-09-10 1977-03-14 Nec Corp High frequency high output transistor amplifier

Also Published As

Publication number Publication date
ATE7486T1 (de) 1984-06-15
EP0014002A2 (en) 1980-08-06
EP0014002B2 (en) 1989-09-20
EP0014002A3 (en) 1980-08-20
EP0014002B1 (en) 1984-05-16
DE3067797D1 (en) 1984-06-20
JPS55102292A (en) 1980-08-05
US4353047A (en) 1982-10-05

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